JP7192756B2 - 気相成長装置及び気相成長方法 - Google Patents
気相成長装置及び気相成長方法 Download PDFInfo
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Description
前記反応室には、前記ウェーハを支持したキャリアを搭載するサセプタと、前記ウェーハを支持したキャリアを前記サセプタに対して相対的に上下移動するキャリアリフトピンとが設けられ、
前記キャリアリフトピンは、前記ウェーハを支持したキャリアを前記サセプタに搭載した状態を平面視で見た場合に、前記ウェーハの外縁より外側に設置されている、気相成長装置である。
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送し、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに支持された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに支持された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアにて支持するとともに、前記ロードロック室に搬送されてきた、キャリアに支持された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられていることがより好ましい。
前記反応室には、前記ウェーハを支持したキャリアを搭載するサセプタと、前記ウェーハを支持したキャリアを前記サセプタに対して相対的に上下移動するキャリアリフトピンとが設けられ、
前記キャリアリフトピンは、前記ウェーハを支持したキャリアを前記サセプタに搭載した状態を平面視で見た場合に、前記ウェーハの外縁より外側に設置されている、気相成長方法である。
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送することがより好ましい。
図1は、本発明の実施形態に係る気相成長装置1を示すブロック図である。図1の中央に示す気相成長装置1の本体は、平面図により示したものである。本実施形態の気相成長装置1は、いわゆるCVD装置である。本実施形態の気相成長装置1は、一対の反応炉11,11と、単結晶シリコンウェーハなどのウェーハWFをハンドリングする第1ロボット121が設置されたウェーハ移載室12と、一対のロードロック室13と、ウェーハWFをハンドリングする第2ロボット141が設置されたファクトリインターフェース14と、複数枚のウェーハWFを収納したウェーハ収納容器15(カセットケース)を設置するロードポートと、を備える。
11…反応炉
111…反応室
112…サセプタ
113…ガス供給装置
114…ゲートバルブ
115…キャリアリフトピン
12…ウェーハ移載室
121…第1ロボット
122…第1ロボットコントローラ
123…第1ブレード
124…第1凹部
13…ロードロック室
131…第1ドア
132…第2ドア
14…ファクトリインターフェース
141…第2ロボット
142…第2ロボットコントローラ
143…第2ブレード
15…ウェーハ収納容器
16…統括コントローラ
17…ホルダ
171…ホルダベース
172…第1ホルダ
173…第2ホルダ
174…ウェーハリフトピン
C…キャリア
C11…底面
C12…上面
C13…外周側壁面
C14…内周側壁面
WF…ウェーハ
Claims (6)
- ウェーハの外周部を支持するリング状のキャリアを用いて、前記ウェーハにCVD膜を形成するための反応室を備えた気相成長装置であって、
前記反応室には、前記ウェーハを支持したキャリアを搭載するサセプタと、前記ウェーハを支持したキャリアを前記サセプタに対して相対的に上下移動するキャリアリフトピンとが設けられ、
前記キャリアリフトピンは、前記ウェーハを支持したキャリアを前記サセプタに搭載した状態を平面視で見た場合に、前記キャリアリフトピンの中心が前記ウェーハの外縁より7mm以上外側に位置するように設置されている、気相成長装置。 - 前記CVD膜は、シリコンエピタキシャル膜である、請求項1に記載の気相成長装置。
- 複数の処理前の前記ウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して前記ウェーハに前記CVD膜を形成する前記反応室へ順次搬送するとともに、
複数の処理後の前記ウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送し、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前の前記ウェーハをキャリアに支持された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後の前記ウェーハをキャリアに支持された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前の前記ウェーハを前記ウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアにて支持するとともに、前記ロードロック室に搬送されてきた、キャリアに支持された処理後の前記ウェーハを、前記ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられている、請求項1または2に記載の気相成長装置。 - ウェーハの外周部を支持するリング状のキャリアを用いて、反応室で前記ウェーハにCVD膜を形成する気相成長方法であって、
前記反応室には、前記ウェーハを支持したキャリアを搭載するサセプタと、前記ウェーハを支持したキャリアを前記サセプタに対して相対的に上下移動するキャリアリフトピンとが設けられ、
前記キャリアリフトピンは、前記ウェーハを支持したキャリアを前記サセプタに搭載した状態を平面視で見た場合に、前記キャリアリフトピンの中心が前記ウェーハの外縁より7mm以上外側に位置するように設置されている、気相成長方法。 - 前記CVD膜は、シリコンエピタキシャル膜である、請求項4に記載の気相成長方法。
- 複数の処理前の前記ウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して前記ウェーハに前記CVD膜を形成する前記反応室へ順次搬送するとともに、
複数の処理後の前記ウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する、請求項4または5に記載の気相成長方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000021788A (ja) | 1998-06-26 | 2000-01-21 | Shin Etsu Handotai Co Ltd | 薄膜成長装置およびこれを用いた薄膜成長方法 |
JP2012216614A (ja) | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | 基板処理装置 |
JP2013042012A (ja) | 2011-08-17 | 2013-02-28 | Tokyo Electron Ltd | 半導体製造装置及び処理方法 |
JP2018536986A (ja) | 2015-10-15 | 2018-12-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板キャリアシステム |
JP2019121642A (ja) | 2017-12-28 | 2019-07-22 | 株式会社Sumco | エピタキシャルウェーハの製造装置及び製造方法 |
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US10755955B2 (en) * | 2018-02-12 | 2020-08-25 | Applied Materials, Inc. | Substrate transfer mechanism to reduce back-side substrate contact |
US11756840B2 (en) * | 2018-09-20 | 2023-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reflectance measurement system and method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000021788A (ja) | 1998-06-26 | 2000-01-21 | Shin Etsu Handotai Co Ltd | 薄膜成長装置およびこれを用いた薄膜成長方法 |
JP2012216614A (ja) | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | 基板処理装置 |
JP2013042012A (ja) | 2011-08-17 | 2013-02-28 | Tokyo Electron Ltd | 半導体製造装置及び処理方法 |
JP2018536986A (ja) | 2015-10-15 | 2018-12-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板キャリアシステム |
JP2019121642A (ja) | 2017-12-28 | 2019-07-22 | 株式会社Sumco | エピタキシャルウェーハの製造装置及び製造方法 |
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