TW202124769A - 氣相沉積裝置及氣相沉積方法 - Google Patents

氣相沉積裝置及氣相沉積方法 Download PDF

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TW202124769A
TW202124769A TW109139696A TW109139696A TW202124769A TW 202124769 A TW202124769 A TW 202124769A TW 109139696 A TW109139696 A TW 109139696A TW 109139696 A TW109139696 A TW 109139696A TW 202124769 A TW202124769 A TW 202124769A
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wafer
carrier
chamber
vapor deposition
reaction chamber
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南出由生
和田直之
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日商Sumco股份有限公司
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Abstract

本發明的課題係在於提供即使不調整晶圓的上下加熱比率,亦可抑制升降頂針的位置對磊晶層造成的影響的氣相沉積裝置。 本發明的解決手段係在反應室111,設有:搭載在載體C的基座112;及使載體C對基座112相對上下移動的載體升降頂針115;載體升降頂針115,在將支持晶圓WF的載體C搭載到基座112的狀態以平面視觀看時,設置在晶圓WF的外緣的外側。

Description

氣相沉積裝置及氣相沉積方法
本發明係關於使用於磊晶晶圓的製造等的氣相沉積裝置及氣相沉積方法。
在用於在矽晶圓氣相沉積矽磊晶層的氣相沉積裝置,已知在加熱載置在反應容器內的基座的矽晶圓時,藉由調整設在基座的上側與下側的加熱裝置的加熱比率,控制形成在矽晶圓的升降頂針附近的矽磊晶層的表面形狀,使矽磊晶層平坦化(專利文獻1)。 [先前技術文獻] [專利文獻]
[專利文獻1]國際公開第2005/034219號
[發明所欲解決的課題]
上述先前技術,在加熱時,由於會經由升降頂針對基座的下方散熱,故根據升降頂針的位置,會對矽磊晶層的表面形狀造成不良影響。因此,藉由調整加熱裝置,減低該不良影響。但是,即使調整晶圓加熱裝置的加熱比率,多少存在升降頂針的位置對矽磊晶層表面形狀所造成的影響。
本發明所欲解決的課題,係在於提供即使不調整晶圓的加熱,亦可抑制載體升降頂針的位置對磊晶層造成的影響的氣相沉積裝置及氣相沉積方法。 [用於解決課題的手段]
本發明係一種氣相沉積裝置,其係具備使用支持晶圓外周部的環狀載體,對上述晶圓形成CVD膜的反應室的氣相沉積裝置, 在上述反應室,設有:基座,其搭載支持上述晶圓的載體;及載體升降頂針,其係使支持上述晶圓的載體對上述基座相對上下移動, 上述載體升降頂針,在將支持上述晶圓的載體裝載到上述基座的狀態以平面視觀看時,設置在上述晶圓的外緣的外側。
在本發明,上述載體升降頂針,在將支持搭載晶圓的載體的基座以平面視觀看時,設置成上述載體升降頂針的中心存在於上述晶圓的外緣的外側7mm以上為更佳。
在本發明,上述CVD膜以矽磊晶膜為更佳。
在本發明,將複數處理前晶圓,從晶圓收納容器,依序經由工廠介面、裝載室及晶圓移載室,搬送到對上述晶圓形成CVD膜的反應室的同時, 將複數處理後晶圓,從上述反應室,依序經由上述晶圓移載室、上述裝載室及上述工廠介面,搬送到上述晶圓收納容器, 上述裝載室,經由第1門與上述工廠介面連通的同時,經由第2門與上述晶圓移載室連通, 上述晶圓移載室,經由閘閥與上述反應室連通, 在上述晶圓移載室,設有將搬送到上述裝載室的處理前晶圓,以支持在載體的狀態投入上述反應室的同時,將在上述反應室結束處理的處理後晶圓,以支持在載體的狀態從上述反應室取出搬送到上述裝載室的第1機器人, 在上述工廠介面,設有將處理前晶圓從收納容器取出,以在上述裝載室待命的載體支持的同時,將搬送到上述裝載室的支持在載體的處理後晶圓,收納到上述晶圓收納容器的第2機器人, 在上述裝載室,設有支持載體的夾持具為更佳。
此外,本發明係一種氣相沉積方法,其係使用支持晶圓外周部的環狀載體,在反應室對上述晶圓形成CVD膜的氣相沉積方法, 在上述反應室,設有:基座,其搭載支持上述晶圓的載體;及載體升降頂針,其係使支持上述晶圓的載體對上述基座相對上下移動, 上述載體升降頂針,在將支持上述晶圓的載體裝載到上述基座的狀態以平面視觀看時,設置在上述晶圓的外緣的外側。
在本發明,上述CVD膜以矽磊晶膜為更佳。
在在本發明,將複數處理前晶圓,從晶圓收納容器,依序經由工廠介面、裝載室及晶圓移載室,搬送到對上述晶圓形成CVD膜的反應室的同時, 將複數處理後晶圓,從上述反應室,依序經由上述晶圓移載室、上述裝載室及上述工廠介面,搬送到上述晶圓收納容器為更佳。 [發明的效果]
根據本發明,即使不調整晶圓的加熱,亦可抑制載體升降頂針的位置對磊晶層造成的影響。
以下根據圖面說明關於本發明的實施形態。 圖1係表示關於本發明的實施形態的氣相沉積裝置1的區塊圖。示於圖1中央的氣相沉積裝置1的本體,係以平面圖表示。本實施形態的氣相沉積裝置1,係所謂CVD裝置。本實施形態的氣相沉積裝置1,具備:一對的反應爐11、11;設置有用於搬運單晶矽晶圓等晶圓WF的第1機器人121的晶圓移載室12;一對的裝載室13;設置有用於搬運晶圓WF的第2機器人141的工廠介面14;設置收納複數片晶圓WF的晶圓收納容器15(晶舟盒)的晶圓裝卸機。
工廠介面14,係作成與載置晶圓收納容器15的無塵室相同的大氣氣氛的區域。在該工廠介面14,設有一方面取出收納在晶圓收納容器15的處理前晶圓WF投入裝載室13,另一方面將搬送到裝載室13的處理後晶圓WF收納到晶圓收納容器15的第2機器人141。第2機器人141,係藉由第2機器人控制器142控制,安裝在機器手前端的第2載盤143,沿著預先教導的動作軌跡移動。
裝載室13,係在惰性氣體氣氛的晶圓移載室12,與大氣氣氛的工廠介面14之間,用於置換氣氛氣體的空間。裝載室13,與工廠介面14之間,設有具有氣密性的可開閉的第1門131,裝載室13與晶圓移載室12之間,同樣地設有具有氣密性的可開閉的第2門132。為以惰性氣體置換大氣氣氛,裝載室13,具備:將裝載室13內部真空排氣的排氣裝置;及對裝載室13供給惰性氣體的供給裝置。
例如,將處理前晶圓WF從晶圓收納容器15搬送到晶圓移載室12時,關閉工廠介面14側的第1門131,關閉晶圓移載室12側的第2門132,使裝載室13為惰性氣體氣氛的狀態,使用第2機器人141,取出晶圓收納容器15的晶圓WF,打開工廠介面14側的第1門131,將晶圓WF搬送到裝載室13。接著,關閉工廠介面14側的第1門131,使該裝載室13再度呈惰性氣體氣氛之後,打開晶圓移載室12側的第2門132,使用第1機器人121,將該晶圓WF搬送到晶圓移載室12。
相反地,將處理後晶圓WF從晶圓移載室12搬送到晶圓收納容器15時,關閉工廠介面14側的第1門131,關閉晶圓移載室12側的第2門132,使裝載室13為惰性氣體氣氛的狀態,打開晶圓移載室12側的第2門132,使用第1機器人121,將晶圓移載室12的晶圓WF搬送到裝載室13。接著,關閉晶圓移載室12側的第2門132,使該裝載室13再度呈惰性氣體氣氛之後,打開工廠介面14側的第1門131,使用第2機器人141,將該晶圓WF搬送到晶圓收納容器15。
晶圓移載室12,係由密閉的腔體組成。晶圓移載室12的一方與裝載室13,經由可開閉的具有氣密性的第2門132連接,另一方經由具有氣密性的可開閉的閘閥114連接。在晶圓移載室12,設置有:將處理前晶圓WF從裝載室13搬送到反應室111的同時,將處理後晶圓WF從反應室111搬送到裝載室13的第1機器人121。第1機器人121,係藉由第1機器人控制器122控制,安裝在機械手前端的第1載盤123,沿著預先教導的動作軌跡移動。
管理氣相沉積裝置1全體的控制的管理控制器16,與第1機器人控制器122及第2機器人控制器142,互相收發控制訊號。然後,當來自管理控制器16的動作指令訊號,發送到第1機器人控制器122,則第1機器人控制器122控制第1機器人121的動作,而該第1機器人121的動作結果,將從第1機器人控制器122發送到管理控制器16。藉此,管理控制器16,辯識第1機器人121的動作狀態。同樣地,當來自管理控制器16的動作指令訊號,發送到第2機器人控制器142,則第2機器人控制器142控制第2機器人141的動作,而該第2機器人141的動作結果,將從第2機器人控制器142發送到管理控制器16。藉此,管理控制器16,辯識第2機器人141的動作狀態。
晶圓移載室12,從未示於圖的惰性氣體供給裝置供給惰性氣體,藉由連接在排氣口的滌氣器(洗淨集塵裝置)將晶圓移載室12的氣體淨化之後,排放到系外。此種滌氣器,雖省略詳細圖示,例如可使用先前習知的加壓水式滌氣器。
反應爐11,係用於藉由CVD法在晶圓WF的表面上生成磊晶膜的裝置。反應爐11,具備反應室111,在該反應室111內,設有將晶圓WF載置旋轉的基座112,此外,設有對反應室111供給氫氣及用於生成CVD膜的原料氣體(CVD膜為矽磊晶膜時,例如二氯矽烷SiH2 Cl2 或三氯矽烷SiHCl3 等)的氣體供給裝置113。此外,反應室111的周圍,設有用於將晶圓WF升溫到既定溫度的加熱燈(省略圖示)。再者,在反應室111與晶圓移載室12之間,設有閘閥114,藉由閉塞閘閥114,確保反應室111的晶圓移載室12的氣密性。該等反應爐11的基座112的驅動、氣體供給裝置113的氣體供給.停止、加熱燈的ON/OFF、閘閥114的開關動作的各控制,係藉由管理控制器16的指令訊號控制。再者,圖1所示氣相沉積裝置1,表示設有一對反應爐11、11的例,惟亦可為一個反應爐11,亦可為三個以上的反應爐。
在反應爐11,亦設有:具有與晶圓移載室12同樣構成的滌氣器(洗淨集塵裝置)。即,從藉由氣體供給裝置113所供給的氫氣或原料氣體,藉由設在連接反應室111的排氣口的滌氣器淨化之後,排放到系外。關於該滌氣器,亦可使用例如先前習知的加壓水式滌氣器。
在本實施形態的氣相沉積裝置1,將晶圓WF,使用支持該晶圓WF外周部的環狀載體C,在裝載室13與反應室111之間搬送。圖2A係表示載體C的平面圖,圖2B係包含晶圓WF及反應爐11的基座112的載體C的剖面圖,圖5係表示在反應室111內的晶圓WF及載體C的移載程序的平面圖及剖面圖。
本實施形態的載體C,係例如由SiC、SiO2等陶瓷或玻璃狀碳等的材料組成,形成無端的環狀,具有:載置在圖2B所示基座112上面的底面C11;與晶圓WF的背面的外周部全周接觸支持的表面C12;外周側牆面C13;及內周側牆面C14。然後,在將支持在載體C的晶圓WF搬入反應室111內時,如圖5(A)的平面圖所示,將載體C以載置在第1機器人121的第1載盤123的狀態,搬送到同圖(B)所示基座112的上方,藉由同圖(C)所示,設成可對基座112相對上下移動的3個以上的載體升降頂針115,暫時將載體C舉起,如同圖(D)所示,使第1載盤123後退之後,如同圖(E)所示,使基座112上升,載體C載置在基座112的上面。
相反地,將在反應室111結束處理的晶圓WF搭載在載體C的狀態取出時,從圖5(E)所示的狀態,如同圖(D)所示,使基座112下降,僅以載體升降頂針115支持載體C,如同圖(C)所示,使第1載盤123前進到載體C與基座112之間,如同圖(B)所示,使三個載體升降頂針115下降,將載體C載置在第1載盤123,使第1機器人121的手動作。藉此可將結束處理的晶圓WF,以搭載在載體C的狀態取出。
特別是,在本實施形態的氣相沉積裝置1的反應爐11,將搭載晶圓WF的載體C載置在基座112的狀態,以平面視觀看,則載體升降頂針115,設在晶圓WF的外緣的外側。藉由將載體升降頂針115設置在晶圓WF的外緣的外側,在將晶圓WF加熱時,使載體升降頂針115的散熱對晶圓WF造成的影響變小,藉此可抑制起因於載體升降頂針對CVD膜表面形狀所造成的影響。
在本實施形態的氣相沉積裝置1的反應爐11,載體升降頂針115,例如以圖7所示位置關係設置。圖7係表示在本實施形態的氣相沉積裝置1的反應爐11,將搭載晶圓WF的載體C載置在基座112時,將氣相沉積裝置1以垂直方向切斷時的晶圓WF、載體C、基座112及載體升降頂針115的剖面圖。此外,圖8係將圖7的剖面圖的右側部分放大,為容易理解說明省略基座112的圖示。圖8的直線AA,係對應在以平面視觀看本實施形態的氣相沉積裝置1的反應爐11時的晶圓WF的外緣。如圖7及圖8所示,本實施形態的載體升降頂針115,設成位在晶圓WF的外緣的外側。
本實施形態的氣相沉積裝置1的反應爐11,載體升降頂針115,係例如由SiC、SiO2 等陶瓷或玻璃狀碳等的材料組成。此外,在本實施形態的氣相沉積裝置1的反應爐11,載體升降頂針115形狀,並無特別限制,可為圖7及圖8所示圓頭針。然後,圓頭針的軸的直徑X,例如為3.8mm,針的圓頭的最粗的部分的直徑Y,例如為5.6mm。在本實施形態的氣相沉積裝置1的反應爐11,使用此載體升降頂針115時,將載體升降頂針115配置成晶圓WF的外緣與載體升降頂針115的中心距離Z比2.8mm大。
在本實施形態的氣相沉積裝置1的反應爐11,載體升降頂針115與晶圓WF的外緣的距離,需要至少隔離多少,其下限值並無特別限定,根據載體升降頂針115的形狀等規定。惟,為更加抑制載體升降頂針115對CVD膜所造成的影響,將載體升降頂針115配置成晶圓WF的外緣與載體升降頂針115的中心距離Z為7mm以上為佳。此係因為在將氣相沉積裝置1的反應爐11以平面視觀看時,載體升降頂針115的中心位在晶圓WF的外緣時,從載體升降頂針115的中心位置,到從晶圓WF的外緣到7mm的範圍,載體升降頂針115會對形成在晶圓WF的CVD膜的表面形狀造成影響。該載體升降頂針115會對CVD膜造成影響的範圍,基於圖9所示的矽磊晶膜的外周部的厚度輪廓說明如下。
圖9係表示使用氣相沉積裝置1的反應爐11,處理12吋晶圓WF時所形成的矽磊晶膜的外周部的厚度輪廓。縱軸為磊晶層的厚度(將目標膜厚正規化成1的值),橫軸為晶圓中心的距離(單位mm)。使載體升降頂針115的設置位置在晶圓的外緣外側的實施例(在圖9係以○標識表示),成如圖9以虛線表示的矽磊晶膜外周部的厚度輪廓。對此,載體升降頂針115的設置位置沒有在晶圓的外緣外側的比較例(在圖9以●標識表示),成如圖9以實線所示矽磊晶膜的外周部的厚度輪廓。即,在圖9以●標識及實線表示的關於比較例的矽磊晶膜的外周部的厚度輪廓,係在將氣相沉積裝置1的反應爐11以平面視觀看時,載體升降頂針115的中心位於晶圓WF的外緣,即使載體升降頂針115的中心,配置在圖9的橫軸的150mm的位置所得輪廓的一例。如圖9的●標識與實線的輪廓所示,載體升降頂針115影響矽磊晶膜的厚度的是從晶圓WF的中心的143mm附近的外側,即從晶圓WF的外緣向內側7mm的範圍。然後,從該晶圓WF的外緣到7mm的範圍,本發明者們確認不依晶圓WF的直徑的大小。
另一方面,在本實施形態的氣相沉積裝置1的反應爐11,載體升降頂針115與晶圓WF外緣的距離的上限,並無特別限制,可根據載體C的直徑、基座112的直徑、及氣相沉積裝置1的晶圓WF的搬送途徑的大小設定為適當的值。
此外,在本實施形態的氣相沉積裝置1,為將載體C,從裝載室13搬送到反應室111的步驟之間,在裝載室13,將處理前晶圓WF載置在載體C,從載體C取出處理後晶圓WF。因此,在裝載室13,設有將載體C上下2層支持的夾持具17。圖3A係表示設在裝載室13的夾持具17的平面圖,圖3B係包含晶圓WF的夾持具17的剖面圖。本實施形態的夾持具17,設有:固定的夾持具基盤171;對該夾持具基盤171可上下升降地設置,將2個載體C以上下2層支持的第1夾持具172及第2夾持具173;對夾持具基盤171,可上下升降地設置的三個晶圓升降頂針174。
第1夾持具172及第2夾持具173(在圖3A的平面圖,由於第2夾持具173被第1夾持具172隱蔽,故僅圖示第1夾持具172。),具有用於以4點支持載體C的突起,在第1夾持具172載置一個載體C,在第2夾持具173亦載置一個載體C。再者,載置在第2夾持具173的載體C,插入第1夾持具172與第2夾持具173之間的空隙。
圖4係表示在裝載室13的晶圓WF及載體C的移載程序的平面圖及剖面圖,如同圖(B)所示,載體C以支持在第1夾持具172的狀態,將處理前晶圓WF搭載到該載體C的程序。即,設在工廠介面14的第2機器人141,係將收納在晶圓收納容器15的1片晶圓WF載放在第2載盤143,經由裝載室13的第1門131,如同圖(B)所示,搬送到夾持具17的上方。接著,如同圖(C)所示,使3個晶圓升降頂針174對夾持具基盤171上升,暫時舉起晶圓WF,如同圖(D)所示,使第2載盤143後退。再者,3個晶圓升降頂針174,如同圖(A)的平面圖所示,設在不會干涉第2載盤143的位置。接著,如同圖(D)及(E)所示,藉由使3個晶圓升降頂針174下降的同時,使第1夾持具172及第2夾持具173上升,將晶圓WF搭載到載體C。
相反地,將以載置在載體C的狀態搬送到裝載室13的處理後晶圓WF,搬送到晶圓收納容器15時,從圖4(E)所示的狀態,如同圖(D)所示,使3個晶圓升降頂針174上升的同時,使第1夾持具172及第2夾持具173下降,僅以晶圓升降頂針174支持晶圓WF,如同圖(C)所示,使第2載盤143前進到載體C與晶圓WF之間之後,如同圖(B)所示,使三個晶圓升降頂針174下降將晶圓WF放在第2載盤143,使第2機器人141的手動作。藉此可將結束處理的晶圓WF從載體C取出到晶圓收納容器15。再者,從圖4(E)表示的狀態,將結束處理的晶圓WF以搭載於載體C的狀態搬送到第1夾持具172,惟搬送到第2夾持具173時,亦可以同樣的程序,將晶圓WF從載體C取出到晶圓收納容器15。
圖6(A)係表示在第1機器人121的手前端,安裝第1載盤123的一例的平面圖,圖6(B)係包含載體C及晶圓WF的第1載盤123的剖面圖。本實施形態的第1載盤123,係在長條板狀本體的一面,形成對應載體C的外周側牆面C13的直徑的第1凹部124。第1凹部124的直徑,形成為較載體C的外周側牆面C13的直徑稍大。然後,第1機器人121,在搬送載放晶圓WF或空的載體C時,將載體C載放在第1凹部124。
接著,說明在本實施形態的氣相沉積裝置1,將生成磊晶膜前(以下亦僅稱為處理前)及生成磊晶膜後(以下亦僅稱為處理後)的晶圓WF,與載體C,取送的程序。圖10A~圖10D係表示在本實施形態的氣相沉積裝置的晶圓及載體的處理程序的示意圖,圖1的一方的晶圓收納容器15,對應裝載室13及反應爐11,在晶圓收納容器15,收納複數片晶圓W1、W2、W3…(例如共計25張),以此順序開始處理。
圖10A的步驟S0,係表示從此使用氣相沉積裝置1開始處理的待命狀態,在晶圓收納容器15,收納複數片晶圓W1、W2、W3…(例如,共計25片),在裝載室13的第1夾持具172支持空的載體C1,第2夾持具173支持空的載體C2,在裝載室13呈惰性氣體氣氛。
在下一步驟S1,第2機器人141,將收納在晶圓收納容器15的晶圓W1載放在第2載盤143,打開裝載室13的第1門131,移載到第1夾持具172支持的載體C1。該移載程序係如參照圖4所說明。
在下一步驟S2,關閉裝載室13的第1門131,以關閉第2門132的狀態,將裝載室13的內部再度置換成惰性氣體氣氛。然後,打開第2門132,將載體C1載放在第1機器人121的第1載盤123,開始反應爐11的閘閥114,經由該閘閥114將搭載晶圓W1的載體C1移載到基座112。該移載程序係如參照圖4所說明。在步驟S2~S4,在反應爐11,進行對晶圓W1的CVD膜生成處理。
即,將搭載處理前晶圓W1的載體C1移載到反應室111的基座112,關閉閘閥114,待命既定時間之後,由氣體供給裝置113對反應室111供給氫氣,使反應室111呈氫氣氣氛。接著,以加熱燈將反應室111的晶圓W1升溫到既定溫度,按照需要施以蝕刻或熱處理等前處理之後,由氣體供給裝置113邊控制原料氣體的流量及/或供給時間而供給。藉此,在晶圓W1的表面,生成CVD膜。形成了CVD膜,則由氣體供給裝置113對反應室111再度供給氫氣置換成氫氣氣氛之後,待命既定時間。
如此在步驟S2~S4,藉由反應爐11對晶圓WI進行處理時,第2機器人141,從晶圓收納容器15取出下一個晶圓W2,做下一處理的準備。在此之前,在本實施形態,在步驟S3,關閉裝載室13的第2門132,以關閉第1門131的的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開第2門132,以第1機器人121,將第2夾持具173支持的載體C2,移載到第1夾持具172,關閉第2門132。接著,在步驟S4,第2機器人141,將收納在晶圓收納容器15的晶圓W2載放到第2載盤143,打開第1門131,將支持在裝載室13的第1夾持具172的載體C2移載。
在如此的本實施形態,追加步驟S3,將收納在晶圓收納容器15的處理前晶圓WF,搭載到裝載室13的夾持具17的最上層的夾持具的第1夾持具172。此係根據如下理由。即,如步驟S2所示,搭載下一晶圓W2的空的載體C2係以第2夾持具173支持時,若將晶圓W2搭載於此,則有搭載處理後晶圓W1的載體C1移載到第1夾持具172的可能性。由於本實施形態的氣相沉積裝置1的載體C,會被送到反應室111,故載體C會成為產生粒子的主要原因,載體C1被支持在處理前晶圓W2的上部,則有塵埃掉到處理前晶圓W2之虞。因此,將處理前晶圓WF搭載於裝載室13的夾持具17的最上層的夾持具(第夾持具172),追加步驟S3,將空的載體C2移載到第1夾持具172。
在步驟S5,以關閉裝載室13的第1門131,關閉第2門132的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開反應爐11的閘閥114,將第1機器人121的第1載盤123插入反應室111,將搭載處理後晶圓W1的載體C1載放,從反應室111取出,關上閘閥114之後,打開第2門132,將裝載室13的第2夾持具173移載。接著,在第1機器人121的第1載盤123,載放第1夾持具172支持的載體C2,將搭載該處理前晶圓W2的載體C2,如步驟S6所示,經由晶圓移載室12,打開閘閥114,將反應爐11的基座112移載。
在步驟S6~S9,在反應爐11,進行對晶圓W2生成CVD膜的處理。即,將搭載處理前晶圓W2的載體C2移載到反應室111的基座112,關閉閘閥114,待命既定時間之後,由氣體供給裝置113對反應室111供給氫氣,使反應室111呈氫氣氣氛。接著,以加熱燈將反應室111的晶圓W2升溫到既定溫度,按照需要進行蝕刻或熱處理等前處理之後,由氣體供給裝置113邊控制原料氣體的流量及/或供給時間而供給。藉此在晶圓W2的表面生成CVD膜。形成CVD膜,則由氣體供給裝置113對反應室111再度供給氫氣,將反應室111置換成氫氣氣氛之後,待命既定時間。
如此在步驟S6~S9,藉由反應爐11對晶圓W2進行處理時,第2機器人141,將處理後的晶圓W1收納在晶圓收納容器15的同時,從晶圓收納容器15取出下一晶圓W3,做下一處理的準備。即,在步驟S7,以關閉裝載室13的第2門132,亦關閉第1門131的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開第1門131,藉由第2機器人141,將處理後晶圓W1,從支持在第2夾持具173的載體C1,載放到第2載盤143,如步驟S8所示,將該處理後的晶圓W1收納在晶圓收納容器15。接著,與上述步驟S3同樣,在步驟S8,以關閉裝載室13的第1門131,關閉第2門132的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開第2門132,藉由第1機器人121,將支持在第2夾持具173的載體C1移載到第1夾持具172。
接著,在步驟S9,以關閉裝載室13的第2門132,亦關閉第1門131的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,藉由第2機器人141,將收納在晶圓收納容器15的晶圓W3載放到第2載盤143,如步驟S9所示,打開第1門131,移載到裝載室13的支持在第1夾持具172的載體C1。
在步驟S10,與上述步驟S5同樣,以關閉裝載室13的第1門131,亦關閉第2門132的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開反應爐11的閘閥114,將第1機器人121的第1載盤123插入反應室111,將搭載處理後晶圓W2的載體C2載放,關閉閘閥114之後,打開第2門132,將第2夾持具173從反應室111移載到裝載室13。接著,將支持在第1夾持具172的載體C1,移載到第1機器人121的第1載盤123,將搭載該處理前晶圓W3的載體C1,如步驟S11所示,經由晶圓移載室12,移載到反應爐11的基座112。
在步驟S10,與上述步驟S7同樣,以關閉裝載室13的第2門132,亦關閉第1門131的狀態,將裝載室13內部置換成惰性氣體氣氛。然後,打開第1門131,藉由第2機器人141,將處理後晶圓W2從支持在第2夾持具173的載體C2載放到第2載盤143,如步驟S11所示,將該處理後晶圓W2收納在晶圓收納容器15。以下,直到收納在晶圓收納容器15的所有處理前晶圓WF的處理結束,重複以上的步驟。
如以上,在本實施形態的氣相沉積裝置1,將支持搭載晶圓WF的載體C的基座112,以平面視觀看時,藉由將載體升降頂針115設置在晶圓WF的外緣的外側,即使不調整晶圓WF的加熱,可抑制載體升降頂針115的位置對CVD膜造成的影響。此時,載體升降頂針115的中心位在晶圓WF的外緣的外側7mm以上,則可更加抑制載體升降頂針115的位置對CVD膜造成的影響。
此外,將搭載支持晶圓WF的載體C的基座112,以平面視觀看時,藉由使用將載體升降頂針115設置在晶圓WF的外緣的外側的本實施形態的氣相沉積裝置1,處理晶圓WF,即使不調整晶圓WF的加熱,亦可得到形成抑制載體升降推針115的影響的CVD膜的晶圓WF。
1:氣相沉積裝置 11:反應爐 111:反應室 112:基座 113:氣體供給裝置 114:閘閥 115:載體升降頂針 12:晶圓移載室 121:第1機器人 122:第1機器人控制器 123:第1載盤 124:第1凹部 13:裝載室 131:第1門 132:第2門 14:工廠介面 141:第2機器人 142:第2機器人控制器 143:第2載盤 15:晶圓收納容器 16:管理控制器 17:夾持具 171:夾持具基盤 172:第1夾持具 173:第2夾持具 174:晶圓升降頂針 C:載體 C11:底面 C12:表面 C13:外周側牆面 C14:內周側牆面 WF:晶圓
[圖1]係表示關於本發明的實施形態的氣相沉積裝置的區塊圖。 [圖2A]係表示關於本發明的實施形態的載體的平面圖。 [圖2B]係包含在圖1的氣相沉積裝置的晶圓及反應爐的基座的載體的剖面圖。 [圖3A]係表示在圖1的氣相沉積裝置設在裝載室的夾持具的平面圖。 [圖3B]係包含在圖1的氣相沉積裝置的晶圓及載體的夾持具的剖面圖。 [圖4]係表示在圖1的氣相沉積裝置的裝載室的晶圓及載體的移載程序的平面圖及剖面圖。 [圖5]係表示圖1的氣相沉積裝置的反應室內的晶圓及載體的移載程序的平面圖及剖面圖。 [圖6]圖6(A)係表示安裝在圖1的氣相沉積裝置的第1機器人的手臂前端的第1載盤的一例的平面圖,圖6(B)係包含在圖1的氣相沉積裝置的載體及晶圓的第1載盤的剖面圖。 [圖7]係表示在圖1的氣相沉積裝置的反應室內的晶圓、載體、基座及載體升降頂針的位置關係的一例的剖面圖。 [圖8]係放大表示圖7的右側部分的剖面圖。 [圖9]係表示使用圖1的氣相沉積裝置形成的矽磊晶膜的外周部的厚度的輪廓(實施例及比較例)。 [圖10A]係表示在圖1的氣相沉積裝置的晶圓及載體的處理程序的圖(其1)。 [圖10B]係表示在圖1的氣相沉積裝置的晶圓及載體的處理程序的圖(其2)。 [圖10C]係表示在圖1的氣相沉積裝置的晶圓及載體的處理程序的圖(其3)。 [圖10D]係表示在圖1的氣相沉積裝置的晶圓及載體的處理程序的圖(其4)。
1:氣相沉積裝置
11:反應爐
111:反應室
112:基座
113:氣體供給裝置
114:閘閥
12:晶圓移載室
121:第1機器人
122:第1機器人控制器
123:第1載盤
13:裝載室
131:第1門
132:第2門
14:工廠介面
141:第2機器人
142:第2機器人控制器
143:第2載盤
15:晶圓收納容器
16:管理控制器
WF:晶圓

Claims (8)

  1. 一種氣相沉積裝置,其係具備使用支持晶圓外周部的環狀載體,對上述晶圓形成CVD膜的反應室的氣相沉積裝置, 在上述反應室,設有:基座,其搭載支持上述晶圓的載體;及載體升降頂針,其係使支持上述晶圓的載體對上述基座相對上下移動, 上述載體升降頂針,在將支持上述晶圓的載體裝載到上述基座的狀態以平面視觀看時,設置在上述晶圓的外緣的外側。
  2. 如請求項1之氣相沉積裝置,其中上述載體升降頂針,在將支持上述晶圓的載體裝載到上述基座的狀態以平面視觀看時,設置成上述載體升降頂針的中心存在於上述晶圓的外緣的的外側7mm以上。
  3. 如請求項1之氣相沉積裝置,其中上述CVD膜為矽磊晶膜。
  4. 如請求項2之氣相沉積裝置,其中上述CVD膜為矽磊晶膜。
  5. 如請求項1至4之任何一項之氣相沉積裝置,其係將複數處理前晶圓,從晶圓收納容器,依序經由工廠介面、裝載室及晶圓移載室,搬送到對上述晶圓形成CVD膜的反應室的同時, 將複數處理後晶圓,從上述反應室,依序經由上述晶圓移載室、上述裝載室及上述工廠介面,搬送到上述晶圓收納容器, 上述裝載室,經由第1門與上述工廠介面連通的同時,經由第2門與上述晶圓移載室連通, 上述晶圓移載室,經由閘閥與上述反應室連通, 在上述晶圓移載室,設有將搬送到上述裝載室的處理前晶圓,以支持在載體的狀態投入上述反應室的同時,將在上述反應室結束處理的處理後晶圓,以支持在載體的狀態從上述反應室取出搬送到上述裝載室的第1機器人, 在上述工廠介面,設有將處理前晶圓從上述晶圓收納容器取出,以在上述裝載室待命的載體支持的同時,將搬送到上述裝載室的支持在載體的處理後晶圓,收納到上述晶圓收納容器的第2機器人, 在上述裝載室,設有支持載體的夾持具。
  6. 一種氣相沉積方法,其係使用支持晶圓外周部的環狀載體,在反應室對上述晶圓形成CVD膜的氣相沉積方法, 在上述反應室,設有:基座,其搭載支持上述晶圓的載體;及載體升降頂針,其係使支持上述晶圓的載體對上述基座相對上下移動, 上述載體升降頂針,在將支持上述晶圓的載體裝載到上述基座的狀態以平面視觀看時,設置在上述晶圓的外緣的外側。
  7. 如請求項6之氣相沉積方法,其中上述CVD膜為矽磊晶膜。
  8. 如請求項6或7之氣相沉積方法,其係將複數處理前晶圓,從晶圓收納容器,依序經由工廠介面、裝載室及晶圓移載室,搬送到對上述晶圓形成CVD膜的反應室的同時, 將複數處理後晶圓,從上述反應室,依序經由上述晶圓移載室、上述裝載室及上述工廠介面,搬送到上述晶圓收納容器。
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