JP5395114B2 - リソグラフィ投影装置 - Google Patents
リソグラフィ投影装置 Download PDFInfo
- Publication number
- JP5395114B2 JP5395114B2 JP2011115337A JP2011115337A JP5395114B2 JP 5395114 B2 JP5395114 B2 JP 5395114B2 JP 2011115337 A JP2011115337 A JP 2011115337A JP 2011115337 A JP2011115337 A JP 2011115337A JP 5395114 B2 JP5395114 B2 JP 5395114B2
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- Prior art keywords
- liquid
- cleaning
- substrate
- facet
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
− 放射ビームB(例えばUV放射又はDUV放射)を調節するように構成された照明システム(イルミネータ)ILと、
− パターニングデバイス(例えばマスク)MAを支持するように構成され、特定のパラメータに従ってパターニングデバイスを正確に位置決めするように構成された第一ポジショナPMに接続された支持構造(例えばマスクテーブル)MTと、
− 基板(例えばレジストコートウェーハ)Wを保持するように構成され、特定のパラメータに従って基板を正確に位置決めするように構成された第二ポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
− パターニングデバイスMAによって放射ビームBに与えられたパターンを基板Wのターゲット部分C(例えば1つ又は複数のダイを含む)に投影するように構成された投影システム(例えば屈折投影レンズシステム)PSとを含む。
Claims (11)
- 投影システムと、
テーブルと、
前記投影システムと前記テーブルの間の空間から液体を回収する液体回収システムと、を備え、
前記テーブルが、前記投影システムに面する表面上に、前記投影システムを通して投影された洗浄放射ビームを前記液体回収システムの下側に反射する反射器を備え、
前記反射器が、反射性部材を備え、
前記反射器の少なくとも一部が、円錐の表面によって画定されている、
リソグラフィ投影装置。 - 前記反射器の前記投影システムからの距離が、前記放射ビームで基板に結像する距離より大きい、請求項1に記載の装置。
- 使用時に、前記反射器が、前記下側と前記反射器の間に液体が存在する状態で使用される、請求項1または2に記載の装置。
- 超純水及び(a)過酸化水素とオゾンの混合物、又は(b)最高10%の濃度の過酸化水素、又は(c)最高50ppmの濃度のオゾン、又は(d)最高10ppmの濃度の酸素、又は(e)(a)〜(d)から選択された任意の組合せを備える液体を提供する液体供給システムをさらに備える、請求項1乃至3のいずれか一項に記載の装置。
- 前記反射器が、基板の結像中に基板が存在する前記投影システムに面する前記テーブルの表面の窪みに配置される、請求項1乃至4のいずれか一項に記載の装置。
- 前記反射性部材が、アルミ若しくはクロミウムコーティングを有するか、および/または、前記反射性部材の少なくとも外面が、UV放射を反射または吸収する材料で部分的に覆われている、請求項1乃至5のいずれか一項に記載の装置。
- 前記反射性部材が、UV放射透過性ガラスで形成される、請求項1乃至6のいずれか一項に記載の装置。
- 前記反射器が、前記投影システムを通して投影された入射放射を自身の第二小面に反射する第一小面を備えた反射性部材を備え、第二小面が、前記第一小面によって反射した放射を前記下側に反射する、請求項1乃至7のいずれか一項に記載の装置。
- 前記第一小面および前記第二小面が、前記テーブルに形成された前記円錐の内面である、
請求項8に記載の装置。 - 前記第一小面が、前記テーブルに形成された第1の円錐の外面であり、前記第二小面が、前記第1の円錐を囲むように前記テーブルに形成された第2の円錐の内面である、
請求項8に記載の装置。 - 前記第二小面が、前記第一小面と同じ表面の部分として形成されている、
請求項8に記載の装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93503707P | 2007-07-24 | 2007-07-24 | |
US60/935,037 | 2007-07-24 | ||
US11/862,855 | 2007-09-27 | ||
US11/862,855 US9019466B2 (en) | 2007-07-24 | 2007-09-27 | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008187824A Division JP5027749B2 (ja) | 2007-07-24 | 2008-07-18 | リソグラフィ装置、及び液体供給システムの下側を照射する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011193017A JP2011193017A (ja) | 2011-09-29 |
JP5395114B2 true JP5395114B2 (ja) | 2014-01-22 |
Family
ID=40294178
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008187826A Pending JP2009033163A (ja) | 2007-07-24 | 2008-07-18 | リソグラフィ装置及び汚染除去又は防止方法 |
JP2008187824A Expired - Fee Related JP5027749B2 (ja) | 2007-07-24 | 2008-07-18 | リソグラフィ装置、及び液体供給システムの下側を照射する方法 |
JP2011115337A Expired - Fee Related JP5395114B2 (ja) | 2007-07-24 | 2011-05-24 | リソグラフィ投影装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008187826A Pending JP2009033163A (ja) | 2007-07-24 | 2008-07-18 | リソグラフィ装置及び汚染除去又は防止方法 |
JP2008187824A Expired - Fee Related JP5027749B2 (ja) | 2007-07-24 | 2008-07-18 | リソグラフィ装置、及び液体供給システムの下側を照射する方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9019466B2 (ja) |
JP (3) | JP2009033163A (ja) |
CN (1) | CN101354538B (ja) |
NL (2) | NL1035712A1 (ja) |
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NL1035725A1 (nl) | 2009-01-27 |
JP2011193017A (ja) | 2011-09-29 |
CN101354538B (zh) | 2012-07-04 |
US9019466B2 (en) | 2015-04-28 |
JP2009033163A (ja) | 2009-02-12 |
CN101354538A (zh) | 2009-01-28 |
US20090025753A1 (en) | 2009-01-29 |
NL1035712A1 (nl) | 2009-01-27 |
JP5027749B2 (ja) | 2012-09-19 |
US20090027636A1 (en) | 2009-01-29 |
JP2009033162A (ja) | 2009-02-12 |
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