JP5385870B2 - カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス - Google Patents

カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス Download PDF

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JP5385870B2
JP5385870B2 JP2010163887A JP2010163887A JP5385870B2 JP 5385870 B2 JP5385870 B2 JP 5385870B2 JP 2010163887 A JP2010163887 A JP 2010163887A JP 2010163887 A JP2010163887 A JP 2010163887A JP 5385870 B2 JP5385870 B2 JP 5385870B2
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calix
resorcinarene
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JP2011028270A5 (enExample
JP2011028270A (ja
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洋 伊藤
リンダ・カリン・サンドバーグ
ルイサ・ドミニカ・ボザーノ
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2010163887A 2009-07-23 2010-07-21 カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス Expired - Fee Related JP5385870B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/507,968 US7993812B2 (en) 2009-07-23 2009-07-23 Calixarene blended molecular glass photoresists and processes of use
US12/507968 2009-07-23

Publications (3)

Publication Number Publication Date
JP2011028270A JP2011028270A (ja) 2011-02-10
JP2011028270A5 JP2011028270A5 (enExample) 2013-10-10
JP5385870B2 true JP5385870B2 (ja) 2014-01-08

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JP2010163887A Expired - Fee Related JP5385870B2 (ja) 2009-07-23 2010-07-21 カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス

Country Status (4)

Country Link
US (1) US7993812B2 (enExample)
JP (1) JP5385870B2 (enExample)
KR (1) KR20110010056A (enExample)
CN (1) CN101963758B (enExample)

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CN102597034A (zh) * 2009-08-31 2012-07-18 三菱瓦斯化学株式会社 环状化合物、其制造方法、辐射敏感组合物及抗蚀图案形成方法
CN102596874A (zh) * 2009-09-09 2012-07-18 三菱瓦斯化学株式会社 环状化合物、其制造方法、辐射敏感组合物及抗蚀图案形成方法
EP2487148B1 (en) * 2009-10-06 2014-12-31 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern
CN102666461B (zh) * 2009-11-27 2015-09-30 三菱瓦斯化学株式会社 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法
JP5692090B2 (ja) * 2009-12-07 2015-04-01 三菱瓦斯化学株式会社 低分子量ポジ型感放射線性組成物及びレジストパターン形成方法
JP2011180579A (ja) * 2010-02-04 2011-09-15 Sumitomo Chemical Co Ltd レジスト組成物
JPWO2012032790A1 (ja) * 2010-09-10 2014-01-20 出光興産株式会社 酸解離性溶解抑止基を有する組成物
JP2013067612A (ja) * 2011-09-23 2013-04-18 Rohm & Haas Electronic Materials Llc カリックスアレーン化合物およびこれを含むフォトレジスト組成物
JP2013079230A (ja) * 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
CN102557930B (zh) * 2012-01-05 2014-01-29 南京航空航天大学 联苯型分子玻璃及其制备方法
JP5798964B2 (ja) * 2012-03-27 2015-10-21 富士フイルム株式会社 パターン形成方法、及び、これらを用いる電子デバイスの製造方法
GB2501681A (en) * 2012-04-30 2013-11-06 Ibm Nanoimprint lithographic methods
JP6268677B2 (ja) 2012-10-17 2018-01-31 三菱瓦斯化学株式会社 レジスト組成物
US9063420B2 (en) * 2013-07-16 2015-06-23 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate, and method of forming electronic device
CN103752208A (zh) * 2014-01-28 2014-04-30 扬州大学 一种起泡剂和稳泡剂及其合成方法
CN108897192B (zh) * 2018-04-19 2022-04-05 中科院广州化学有限公司南雄材料生产基地 一种巯基-烯纳米压印光刻胶及其使用方法

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JP3443466B2 (ja) * 1993-10-28 2003-09-02 シップレーカンパニー エル エル シー 感光性樹脂組成物
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Also Published As

Publication number Publication date
US7993812B2 (en) 2011-08-09
US20110020756A1 (en) 2011-01-27
CN101963758A (zh) 2011-02-02
CN101963758B (zh) 2013-04-17
JP2011028270A (ja) 2011-02-10
KR20110010056A (ko) 2011-01-31

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