JP5370850B2 - エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ - Google Patents

エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ Download PDF

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Publication number
JP5370850B2
JP5370850B2 JP2009540085A JP2009540085A JP5370850B2 JP 5370850 B2 JP5370850 B2 JP 5370850B2 JP 2009540085 A JP2009540085 A JP 2009540085A JP 2009540085 A JP2009540085 A JP 2009540085A JP 5370850 B2 JP5370850 B2 JP 5370850B2
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Japan
Prior art keywords
wafer
semiconductor wafer
susceptor
back surface
annular
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JP2009540085A
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English (en)
Japanese (ja)
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JPWO2009060912A1 (ja
Inventor
孝 藤川
誠司 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
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Publication date
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Priority to JP2009540085A priority Critical patent/JP5370850B2/ja
Publication of JPWO2009060912A1 publication Critical patent/JPWO2009060912A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009540085A 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ Active JP5370850B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009540085A JP5370850B2 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007291338 2007-11-08
JP2007291338 2007-11-08
PCT/JP2008/070235 WO2009060912A1 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ
JP2009540085A JP5370850B2 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ

Publications (2)

Publication Number Publication Date
JPWO2009060912A1 JPWO2009060912A1 (ja) 2011-03-24
JP5370850B2 true JP5370850B2 (ja) 2013-12-18

Family

ID=40625799

Family Applications (1)

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JP2009540085A Active JP5370850B2 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ

Country Status (4)

Country Link
US (1) US8324063B2 (https=)
JP (1) JP5370850B2 (https=)
TW (1) TW200935500A (https=)
WO (1) WO2009060912A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102112649A (zh) * 2008-08-05 2011-06-29 东京毅力科创株式会社 载置台构造
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
JP5644256B2 (ja) 2010-08-20 2014-12-24 豊田合成株式会社 化合物半導体の製造装置及び化合物半導体の製造方法
KR101710770B1 (ko) 2012-05-18 2017-02-27 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착을 위한 페로플루이드 밀봉부를 갖는 회전 디스크 리액터
US9583364B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial compression
JP2015095599A (ja) * 2013-11-13 2015-05-18 シャープ株式会社 化合物半導体薄膜成長装置
TWI559440B (zh) * 2015-01-28 2016-11-21 漢民科技股份有限公司 晶圓承載裝置
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
DE102018113400A1 (de) * 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
DE102018131987A1 (de) 2018-12-12 2020-06-18 Aixtron Se Substrathalter zur Verwendung in einem CVD-Reaktor
EP4243054A4 (en) * 2020-11-09 2024-11-13 NuFlare Technology, Inc. VAPOR PHASE GROWTH DEVICE
CN113106424A (zh) * 2021-04-23 2021-07-13 浙江爱旭太阳能科技有限公司 防硅片中心下陷的镀膜载板和镀膜设备
CN113106423A (zh) * 2021-04-23 2021-07-13 浙江爱旭太阳能科技有限公司 一种防硅片损伤的镀膜载板和镀膜设备
TW202334490A (zh) * 2021-10-21 2023-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板支撐件、基板支撐件總成、反應室及膜沉積方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758041A (ja) * 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH11176916A (ja) * 1997-12-11 1999-07-02 Toshiba Mach Co Ltd ウェーハ支持体
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2003289044A (ja) * 2002-03-28 2003-10-10 Shin Etsu Handotai Co Ltd サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP2005005379A (ja) * 2003-06-10 2005-01-06 Shin Etsu Handotai Co Ltd 半導体ウエーハの熱処理方法及び熱処理用縦型ボート
JP2007273623A (ja) * 2006-03-30 2007-10-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法及び製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952792A (ja) 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
JPH09266242A (ja) 1996-03-27 1997-10-07 Kuroda Precision Ind Ltd 吸着用チャック装置
JP2003229370A (ja) 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP5156446B2 (ja) * 2008-03-21 2013-03-06 株式会社Ｓｕｍｃｏ 気相成長装置用サセプタ
JP5092975B2 (ja) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758041A (ja) * 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH11176916A (ja) * 1997-12-11 1999-07-02 Toshiba Mach Co Ltd ウェーハ支持体
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2003289044A (ja) * 2002-03-28 2003-10-10 Shin Etsu Handotai Co Ltd サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP2005005379A (ja) * 2003-06-10 2005-01-06 Shin Etsu Handotai Co Ltd 半導体ウエーハの熱処理方法及び熱処理用縦型ボート
JP2007273623A (ja) * 2006-03-30 2007-10-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法及び製造装置

Also Published As

Publication number Publication date
JPWO2009060912A1 (ja) 2011-03-24
TWI375257B (https=) 2012-10-21
US8324063B2 (en) 2012-12-04
TW200935500A (en) 2009-08-16
US20100227455A1 (en) 2010-09-09
WO2009060912A1 (ja) 2009-05-14

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