TW200935500A - Epitaxial film growing method, wafer supporting structure and susceptor - Google Patents

Epitaxial film growing method, wafer supporting structure and susceptor Download PDF

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Publication number
TW200935500A
TW200935500A TW097142975A TW97142975A TW200935500A TW 200935500 A TW200935500 A TW 200935500A TW 097142975 A TW097142975 A TW 097142975A TW 97142975 A TW97142975 A TW 97142975A TW 200935500 A TW200935500 A TW 200935500A
Authority
TW
Taiwan
Prior art keywords
wafer
semiconductor wafer
susceptor
step portion
annular
Prior art date
Application number
TW097142975A
Other languages
English (en)
Chinese (zh)
Other versions
TWI375257B (https=
Inventor
Takashi Fujikawa
Seiji Sugimoto
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW200935500A publication Critical patent/TW200935500A/zh
Application granted granted Critical
Publication of TWI375257B publication Critical patent/TWI375257B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW097142975A 2007-11-08 2008-11-07 Epitaxial film growing method, wafer supporting structure and susceptor TW200935500A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007291338 2007-11-08

Publications (2)

Publication Number Publication Date
TW200935500A true TW200935500A (en) 2009-08-16
TWI375257B TWI375257B (https=) 2012-10-21

Family

ID=40625799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142975A TW200935500A (en) 2007-11-08 2008-11-07 Epitaxial film growing method, wafer supporting structure and susceptor

Country Status (4)

Country Link
US (1) US8324063B2 (https=)
JP (1) JP5370850B2 (https=)
TW (1) TW200935500A (https=)
WO (1) WO2009060912A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI559440B (zh) * 2015-01-28 2016-11-21 漢民科技股份有限公司 晶圓承載裝置

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* Cited by examiner, † Cited by third party
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CN102112649A (zh) * 2008-08-05 2011-06-29 东京毅力科创株式会社 载置台构造
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
JP5644256B2 (ja) 2010-08-20 2014-12-24 豊田合成株式会社 化合物半導体の製造装置及び化合物半導体の製造方法
KR101710770B1 (ko) 2012-05-18 2017-02-27 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착을 위한 페로플루이드 밀봉부를 갖는 회전 디스크 리액터
US9583364B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial compression
JP2015095599A (ja) * 2013-11-13 2015-05-18 シャープ株式会社 化合物半導体薄膜成長装置
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
DE102018113400A1 (de) * 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
DE102018131987A1 (de) 2018-12-12 2020-06-18 Aixtron Se Substrathalter zur Verwendung in einem CVD-Reaktor
EP4243054A4 (en) * 2020-11-09 2024-11-13 NuFlare Technology, Inc. VAPOR PHASE GROWTH DEVICE
CN113106424A (zh) * 2021-04-23 2021-07-13 浙江爱旭太阳能科技有限公司 防硅片中心下陷的镀膜载板和镀膜设备
CN113106423A (zh) * 2021-04-23 2021-07-13 浙江爱旭太阳能科技有限公司 一种防硅片损伤的镀膜载板和镀膜设备
TW202334490A (zh) * 2021-10-21 2023-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板支撐件、基板支撐件總成、反應室及膜沉積方法

Family Cites Families (11)

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JPH0758041A (ja) 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH0952792A (ja) 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
JPH09266242A (ja) 1996-03-27 1997-10-07 Kuroda Precision Ind Ltd 吸着用チャック装置
JPH11176916A (ja) * 1997-12-11 1999-07-02 Toshiba Mach Co Ltd ウェーハ支持体
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2003229370A (ja) 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP3541838B2 (ja) * 2002-03-28 2004-07-14 信越半導体株式会社 サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP2005005379A (ja) * 2003-06-10 2005-01-06 Shin Etsu Handotai Co Ltd 半導体ウエーハの熱処理方法及び熱処理用縦型ボート
JP4868503B2 (ja) * 2006-03-30 2012-02-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法
JP5156446B2 (ja) * 2008-03-21 2013-03-06 株式会社Ｓｕｍｃｏ 気相成長装置用サセプタ
JP5092975B2 (ja) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI559440B (zh) * 2015-01-28 2016-11-21 漢民科技股份有限公司 晶圓承載裝置

Also Published As

Publication number Publication date
JPWO2009060912A1 (ja) 2011-03-24
TWI375257B (https=) 2012-10-21
US8324063B2 (en) 2012-12-04
US20100227455A1 (en) 2010-09-09
WO2009060912A1 (ja) 2009-05-14
JP5370850B2 (ja) 2013-12-18

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