WO2009060912A1 - エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ - Google Patents

エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ Download PDF

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Publication number
WO2009060912A1
WO2009060912A1 PCT/JP2008/070235 JP2008070235W WO2009060912A1 WO 2009060912 A1 WO2009060912 A1 WO 2009060912A1 JP 2008070235 W JP2008070235 W JP 2008070235W WO 2009060912 A1 WO2009060912 A1 WO 2009060912A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
susceptor
supporting structure
epitaxial film
growing method
Prior art date
Application number
PCT/JP2008/070235
Other languages
English (en)
French (fr)
Inventor
Takashi Fujikawa
Seiji Sugimoto
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to US12/682,850 priority Critical patent/US8324063B2/en
Priority to JP2009540085A priority patent/JP5370850B2/ja
Publication of WO2009060912A1 publication Critical patent/WO2009060912A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Abstract

　ウェーハ収納部の底板の外周に形成された環状の段差部を、ウェーハ裏面の、面取り面との境界線からウェーハ中心へ１～６ｍｍが当接する領域に設けた。その結果、裏面と面取り面との境界領域に傷がないエピタキシャルウェーハを製造でき、傷によるデバイス工程でのパーティクルをなくせる。
PCT/JP2008/070235 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ WO2009060912A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/682,850 US8324063B2 (en) 2007-11-08 2008-11-06 Epitaxial film growing method, wafer supporting structure and susceptor
JP2009540085A JP5370850B2 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-291338 2007-11-08
JP2007291338 2007-11-08

Publications (1)

Publication Number Publication Date
WO2009060912A1 true WO2009060912A1 (ja) 2009-05-14

Family

ID=40625799

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070235 WO2009060912A1 (ja) 2007-11-08 2008-11-06 エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ

Country Status (4)

Country Link
US (1) US8324063B2 (ja)
JP (1) JP5370850B2 (ja)
TW (1) TW200935500A (ja)
WO (1) WO2009060912A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012023557A1 (ja) * 2010-08-20 2012-02-23 昭和電工株式会社 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体
JP2015095599A (ja) * 2013-11-13 2015-05-18 シャープ株式会社 化合物半導体薄膜成長装置
JP2021525966A (ja) * 2018-06-06 2021-09-27 アイクストロン、エスイー 基板取扱い用担持リングを有するｃｖｄリアクタ及びｃｖｄリアクタでの担持リングの使用
WO2022097456A1 (ja) * 2020-11-09 2022-05-12 株式会社ニューフレアテクノロジー 気相成長装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5699425B2 (ja) * 2008-08-05 2015-04-08 東京エレクトロン株式会社 載置台構造及び成膜装置
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
WO2013173152A1 (en) 2012-05-18 2013-11-21 Veeco Instruments Inc. Rotating disk reactor with ferrofluid seal for chemical vapor deposition
US10361097B2 (en) * 2012-12-31 2019-07-23 Globalwafers Co., Ltd. Apparatus for stressing semiconductor substrates
TWI559440B (zh) * 2015-01-28 2016-11-21 漢民科技股份有限公司 晶圓承載裝置
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
DE102018131987A1 (de) 2018-12-12 2020-06-18 Aixtron Se Substrathalter zur Verwendung in einem CVD-Reaktor
TW202334490A (zh) * 2021-10-21 2023-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板支撐件、基板支撐件總成、反應室及膜沉積方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758041A (ja) * 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH0952792A (ja) * 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
JPH09266242A (ja) * 1996-03-27 1997-10-07 Kuroda Precision Ind Ltd 吸着用チャック装置
JPH11176916A (ja) * 1997-12-11 1999-07-02 Toshiba Mach Co Ltd ウェーハ支持体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2003229370A (ja) 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP3541838B2 (ja) * 2002-03-28 2004-07-14 信越半導体株式会社 サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP2005005379A (ja) * 2003-06-10 2005-01-06 Shin Etsu Handotai Co Ltd 半導体ウエーハの熱処理方法及び熱処理用縦型ボート
JP4868503B2 (ja) * 2006-03-30 2012-02-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法
JP5156446B2 (ja) 2008-03-21 2013-03-06 株式会社Ｓｕｍｃｏ 気相成長装置用サセプタ
JP5092975B2 (ja) 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758041A (ja) * 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH0952792A (ja) * 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
JPH09266242A (ja) * 1996-03-27 1997-10-07 Kuroda Precision Ind Ltd 吸着用チャック装置
JPH11176916A (ja) * 1997-12-11 1999-07-02 Toshiba Mach Co Ltd ウェーハ支持体

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012023557A1 (ja) * 2010-08-20 2012-02-23 昭和電工株式会社 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体
JP2012044030A (ja) * 2010-08-20 2012-03-01 Showa Denko Kk 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体
US9064696B2 (en) 2010-08-20 2015-06-23 Toyoda Gosei Co., Ltd. Apparatus for manufacturing compound semiconductor, method for manufacturing compound semiconductor, and compound semiconductor
JP2015095599A (ja) * 2013-11-13 2015-05-18 シャープ株式会社 化合物半導体薄膜成長装置
JP2021525966A (ja) * 2018-06-06 2021-09-27 アイクストロン、エスイー 基板取扱い用担持リングを有するｃｖｄリアクタ及びｃｖｄリアクタでの担持リングの使用
JP7307100B2 (ja) 2018-06-06 2023-07-11 アイクストロン、エスイー 基板取扱い用担持リングを有するｃｖｄリアクタ及びｃｖｄリアクタでの担持リングの使用
WO2022097456A1 (ja) * 2020-11-09 2022-05-12 株式会社ニューフレアテクノロジー 気相成長装置
JP7440660B2 (ja) 2020-11-09 2024-02-28 株式会社ニューフレアテクノロジー 気相成長装置

Also Published As

Publication number Publication date
TW200935500A (en) 2009-08-16
JPWO2009060912A1 (ja) 2011-03-24
TWI375257B (ja) 2012-10-21
US20100227455A1 (en) 2010-09-09
JP5370850B2 (ja) 2013-12-18
US8324063B2 (en) 2012-12-04

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