JP5363009B2 - 表示装置およびその製造方法 - Google Patents

表示装置およびその製造方法 Download PDF

Info

Publication number
JP5363009B2
JP5363009B2 JP2008049885A JP2008049885A JP5363009B2 JP 5363009 B2 JP5363009 B2 JP 5363009B2 JP 2008049885 A JP2008049885 A JP 2008049885A JP 2008049885 A JP2008049885 A JP 2008049885A JP 5363009 B2 JP5363009 B2 JP 5363009B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
thin film
film transistor
type thin
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008049885A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009206437A5 (enExample
JP2009206437A (ja
Inventor
秀和 三宅
栄司 大植
拓生 海東
敏夫 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd, Japan Display Inc filed Critical Panasonic Liquid Crystal Display Co Ltd
Priority to JP2008049885A priority Critical patent/JP5363009B2/ja
Priority to CN2009100057992A priority patent/CN101521210B/zh
Priority to TW098105315A priority patent/TWI401805B/zh
Priority to US12/379,662 priority patent/US8058654B2/en
Priority to KR1020090016353A priority patent/KR101043115B1/ko
Priority to EP09153984.1A priority patent/EP2096673B1/en
Publication of JP2009206437A publication Critical patent/JP2009206437A/ja
Publication of JP2009206437A5 publication Critical patent/JP2009206437A5/ja
Application granted granted Critical
Publication of JP5363009B2 publication Critical patent/JP5363009B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008049885A 2008-02-29 2008-02-29 表示装置およびその製造方法 Active JP5363009B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008049885A JP5363009B2 (ja) 2008-02-29 2008-02-29 表示装置およびその製造方法
CN2009100057992A CN101521210B (zh) 2008-02-29 2009-02-12 显示装置及其制造方法
TW098105315A TWI401805B (zh) 2008-02-29 2009-02-19 顯示裝置
KR1020090016353A KR101043115B1 (ko) 2008-02-29 2009-02-26 표시 장치 및 그 제조 방법
US12/379,662 US8058654B2 (en) 2008-02-29 2009-02-26 Display device and manufacturing method thereof
EP09153984.1A EP2096673B1 (en) 2008-02-29 2009-02-27 Method of manufacturing display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008049885A JP5363009B2 (ja) 2008-02-29 2008-02-29 表示装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2009206437A JP2009206437A (ja) 2009-09-10
JP2009206437A5 JP2009206437A5 (enExample) 2011-02-10
JP5363009B2 true JP5363009B2 (ja) 2013-12-11

Family

ID=40719637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008049885A Active JP5363009B2 (ja) 2008-02-29 2008-02-29 表示装置およびその製造方法

Country Status (6)

Country Link
US (1) US8058654B2 (enExample)
EP (1) EP2096673B1 (enExample)
JP (1) JP5363009B2 (enExample)
KR (1) KR101043115B1 (enExample)
CN (1) CN101521210B (enExample)
TW (1) TWI401805B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5111167B2 (ja) * 2008-03-06 2012-12-26 株式会社ジャパンディスプレイイースト 液晶表示装置
FR2944140B1 (fr) * 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
KR20110081694A (ko) * 2010-01-08 2011-07-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
JP6544166B2 (ja) * 2015-09-14 2019-07-17 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
CN105470310A (zh) * 2016-01-21 2016-04-06 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044994B (en) 1979-03-22 1983-06-15 Philips Electronic Associated Thin film transistors
JPH0693509B2 (ja) 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
ATE77177T1 (de) 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPH0563196A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 薄膜半導体装置及びその製造方法並び液晶表示装置
JPH06188265A (ja) 1992-12-22 1994-07-08 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JP2757850B2 (ja) * 1996-04-18 1998-05-25 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP4019461B2 (ja) * 1996-09-06 2007-12-12 セイコーエプソン株式会社 カラー表示装置とその製造方法およびカラー液晶装置
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
JP2002202527A (ja) * 2000-12-28 2002-07-19 Nec Corp アクティブマトリクス型液晶表示装置
JP2004079735A (ja) * 2002-08-15 2004-03-11 Nec Corp 薄膜トランジスタの製造方法
TW554539B (en) * 2002-09-09 2003-09-21 Chunghwa Picture Tubes Ltd Thin film transistor source/drain structure and manufacturing method thereof
KR100904266B1 (ko) 2002-12-31 2009-06-25 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조 방법
JP4316896B2 (ja) * 2003-01-09 2009-08-19 株式会社 日立ディスプレイズ 表示装置とその製造方法
KR100584715B1 (ko) * 2004-04-06 2006-05-29 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20060138403A1 (en) * 2004-12-29 2006-06-29 Gang Yu Organic electronic devices including pixels
US7521710B2 (en) * 2006-02-16 2009-04-21 Idemitsu Kosan Co., Ltd. Organic thin film transistor
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
JP2008311545A (ja) * 2007-06-18 2008-12-25 Hitachi Displays Ltd 表示装置

Also Published As

Publication number Publication date
TW201001711A (en) 2010-01-01
US20090218575A1 (en) 2009-09-03
EP2096673A2 (en) 2009-09-02
KR101043115B1 (ko) 2011-06-20
KR20090093849A (ko) 2009-09-02
EP2096673A3 (en) 2011-04-20
CN101521210B (zh) 2012-05-23
TWI401805B (zh) 2013-07-11
CN101521210A (zh) 2009-09-02
US8058654B2 (en) 2011-11-15
JP2009206437A (ja) 2009-09-10
EP2096673B1 (en) 2021-06-02

Similar Documents

Publication Publication Date Title
JP2010003910A (ja) 表示素子
KR100990818B1 (ko) 표시 장치 및 표시 장치의 제조 방법
US7642141B2 (en) Manufacturing method for display device
JP5384088B2 (ja) 表示装置
JP5363009B2 (ja) 表示装置およびその製造方法
US8129724B2 (en) Display device including first, second, and third semiconductor films
TWI447916B (zh) 顯示裝置
JP4984369B2 (ja) 画像表示装置及びその製造方法
US20080296583A1 (en) Display Device And Manufacturing Method of The Same
US20040252250A1 (en) Liquid crystal display device and method of manufacturing the same
CN100422798C (zh) 显示装置及其制造方法
JP5346477B2 (ja) 表示装置およびその製造方法
JPH06169086A (ja) 多結晶シリコン薄膜トランジスタ
TWI459566B (zh) 薄膜電晶體、具有其之顯示裝置及製造薄膜電晶體與顯示裝置之方法
JPH10209452A (ja) 薄膜トランジスタ及びその製造方法
JP2010205850A (ja) 表示装置
JP2009021276A (ja) 薄膜トランジスタ、表示装置、及び薄膜トランジスタの製造方法
KR20080047773A (ko) 폴리실리콘 박막 트랜지스터 기판 및 그 제조 방법
US20120217502A1 (en) Display device and manufacturing method of the same
JP2009070862A (ja) 表示装置およびその製造方法
JP2004006974A (ja) アクティブマトリクス回路の作製方法
JPH1022506A (ja) ポリシリコン薄膜トランジスタおよび液晶表示装置
JP2002313802A (ja) 薄膜トランジスタ及びその製造方法、並びに、その薄膜トランジスタを用いた表示装置。
JP2008021803A (ja) 薄膜トランジスタ
JP2009064861A (ja) 半導体装置、半導体装置の製造方法および電気光学装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101207

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101216

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20110218

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20110218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130319

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130905

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5363009

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250