TWI401805B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI401805B TWI401805B TW098105315A TW98105315A TWI401805B TW I401805 B TWI401805 B TW I401805B TW 098105315 A TW098105315 A TW 098105315A TW 98105315 A TW98105315 A TW 98105315A TW I401805 B TWI401805 B TW I401805B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- thin film
- film transistor
- type thin
- electrode
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims abstract description 145
- 239000004065 semiconductor Substances 0.000 claims abstract description 143
- 239000010408 film Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 239000012535 impurity Substances 0.000 claims abstract description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000005192 partition Methods 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 1
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 21
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 21
- 229910004444 SUB1 Inorganic materials 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910004438 SUB2 Inorganic materials 0.000 description 6
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 101150018444 sub2 gene Proteins 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008049885A JP5363009B2 (ja) | 2008-02-29 | 2008-02-29 | 表示装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001711A TW201001711A (en) | 2010-01-01 |
| TWI401805B true TWI401805B (zh) | 2013-07-11 |
Family
ID=40719637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098105315A TWI401805B (zh) | 2008-02-29 | 2009-02-19 | 顯示裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8058654B2 (enExample) |
| EP (1) | EP2096673B1 (enExample) |
| JP (1) | JP5363009B2 (enExample) |
| KR (1) | KR101043115B1 (enExample) |
| CN (1) | CN101521210B (enExample) |
| TW (1) | TWI401805B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5111167B2 (ja) * | 2008-03-06 | 2012-12-26 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
| FR2944140B1 (fr) * | 2009-04-02 | 2011-09-16 | Commissariat Energie Atomique | Dispositif de detection d'image electronique |
| KR20110081694A (ko) * | 2010-01-08 | 2011-07-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법 |
| JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
| JP6544166B2 (ja) * | 2015-09-14 | 2019-07-17 | 信越化学工業株式会社 | ＳｉＣ複合基板の製造方法 |
| CN105470310A (zh) * | 2016-01-21 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW395060B (en) * | 1996-04-18 | 2000-06-21 | Nippon Electric Co | Staggered thin film transistor with an improved ohmic contact structure and its fabricating method |
| US20020085157A1 (en) * | 2000-12-28 | 2002-07-04 | Nec Corporation | Active matrix addressing liquid-crystal display device |
| US6620719B1 (en) * | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
| CN1517752A (zh) * | 2003-01-09 | 2004-08-04 | ��ʽ����������ʾ�� | 显示装置及其制造方法 |
| CN1680992A (zh) * | 2004-04-06 | 2005-10-12 | Lg.菲利浦Lcd株式会社 | 具有驱动电路的液晶显示器件及其制造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2044994B (en) | 1979-03-22 | 1983-06-15 | Philips Electronic Associated | Thin film transistors |
| JPH0693509B2 (ja) | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
| ATE77177T1 (de) | 1985-10-04 | 1992-06-15 | Hosiden Corp | Duennfilmtransistor und verfahren zu seiner herstellung. |
| JPH0563196A (ja) * | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
| JPH06188265A (ja) | 1992-12-22 | 1994-07-08 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPH08204032A (ja) * | 1995-01-20 | 1996-08-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3516424B2 (ja) * | 1996-03-10 | 2004-04-05 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置 |
| JP4019461B2 (ja) * | 1996-09-06 | 2007-12-12 | セイコーエプソン株式会社 | カラー表示装置とその製造方法およびカラー液晶装置 |
| JP2004079735A (ja) * | 2002-08-15 | 2004-03-11 | Nec Corp | 薄膜トランジスタの製造方法 |
| TW554539B (en) * | 2002-09-09 | 2003-09-21 | Chunghwa Picture Tubes Ltd | Thin film transistor source/drain structure and manufacturing method thereof |
| KR100904266B1 (ko) | 2002-12-31 | 2009-06-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판의 제조 방법 |
| JP5036173B2 (ja) * | 2004-11-26 | 2012-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20060138403A1 (en) * | 2004-12-29 | 2006-06-29 | Gang Yu | Organic electronic devices including pixels |
| US7521710B2 (en) * | 2006-02-16 | 2009-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor |
| US7646015B2 (en) * | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
| JP5303119B2 (ja) * | 2007-06-05 | 2013-10-02 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2008311545A (ja) * | 2007-06-18 | 2008-12-25 | Hitachi Displays Ltd | 表示装置 |
-
2008
- 2008-02-29 JP JP2008049885A patent/JP5363009B2/ja active Active
-
2009
- 2009-02-12 CN CN2009100057992A patent/CN101521210B/zh active Active
- 2009-02-19 TW TW098105315A patent/TWI401805B/zh active
- 2009-02-26 US US12/379,662 patent/US8058654B2/en active Active
- 2009-02-26 KR KR1020090016353A patent/KR101043115B1/ko active Active
- 2009-02-27 EP EP09153984.1A patent/EP2096673B1/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW395060B (en) * | 1996-04-18 | 2000-06-21 | Nippon Electric Co | Staggered thin film transistor with an improved ohmic contact structure and its fabricating method |
| US6620719B1 (en) * | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
| US20020085157A1 (en) * | 2000-12-28 | 2002-07-04 | Nec Corporation | Active matrix addressing liquid-crystal display device |
| CN1517752A (zh) * | 2003-01-09 | 2004-08-04 | ��ʽ����������ʾ�� | 显示装置及其制造方法 |
| CN1680992A (zh) * | 2004-04-06 | 2005-10-12 | Lg.菲利浦Lcd株式会社 | 具有驱动电路的液晶显示器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201001711A (en) | 2010-01-01 |
| US20090218575A1 (en) | 2009-09-03 |
| EP2096673A2 (en) | 2009-09-02 |
| JP5363009B2 (ja) | 2013-12-11 |
| KR101043115B1 (ko) | 2011-06-20 |
| KR20090093849A (ko) | 2009-09-02 |
| EP2096673A3 (en) | 2011-04-20 |
| CN101521210B (zh) | 2012-05-23 |
| CN101521210A (zh) | 2009-09-02 |
| US8058654B2 (en) | 2011-11-15 |
| JP2009206437A (ja) | 2009-09-10 |
| EP2096673B1 (en) | 2021-06-02 |
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