TWI401805B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI401805B
TWI401805B TW098105315A TW98105315A TWI401805B TW I401805 B TWI401805 B TW I401805B TW 098105315 A TW098105315 A TW 098105315A TW 98105315 A TW98105315 A TW 98105315A TW I401805 B TWI401805 B TW I401805B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
thin film
film transistor
type thin
electrode
Prior art date
Application number
TW098105315A
Other languages
English (en)
Chinese (zh)
Other versions
TW201001711A (en
Inventor
三宅秀和
大植榮司
海東拓生
宮澤敏夫
Original Assignee
日立顯示器股份有限公司
松下液晶顯示器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立顯示器股份有限公司, 松下液晶顯示器股份有限公司 filed Critical 日立顯示器股份有限公司
Publication of TW201001711A publication Critical patent/TW201001711A/zh
Application granted granted Critical
Publication of TWI401805B publication Critical patent/TWI401805B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW098105315A 2008-02-29 2009-02-19 顯示裝置 TWI401805B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008049885A JP5363009B2 (ja) 2008-02-29 2008-02-29 表示装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW201001711A TW201001711A (en) 2010-01-01
TWI401805B true TWI401805B (zh) 2013-07-11

Family

ID=40719637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098105315A TWI401805B (zh) 2008-02-29 2009-02-19 顯示裝置

Country Status (6)

Country Link
US (1) US8058654B2 (enExample)
EP (1) EP2096673B1 (enExample)
JP (1) JP5363009B2 (enExample)
KR (1) KR101043115B1 (enExample)
CN (1) CN101521210B (enExample)
TW (1) TWI401805B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5111167B2 (ja) * 2008-03-06 2012-12-26 株式会社ジャパンディスプレイイースト 液晶表示装置
FR2944140B1 (fr) * 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
KR20110081694A (ko) * 2010-01-08 2011-07-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
TWI666776B (zh) * 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
JP6544166B2 (ja) * 2015-09-14 2019-07-17 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
CN105470310A (zh) * 2016-01-21 2016-04-06 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW395060B (en) * 1996-04-18 2000-06-21 Nippon Electric Co Staggered thin film transistor with an improved ohmic contact structure and its fabricating method
US20020085157A1 (en) * 2000-12-28 2002-07-04 Nec Corporation Active matrix addressing liquid-crystal display device
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
CN1517752A (zh) * 2003-01-09 2004-08-04 ��ʽ����������ʾ�� 显示装置及其制造方法
CN1680992A (zh) * 2004-04-06 2005-10-12 Lg.菲利浦Lcd株式会社 具有驱动电路的液晶显示器件及其制造方法

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GB2044994B (en) 1979-03-22 1983-06-15 Philips Electronic Associated Thin film transistors
JPH0693509B2 (ja) 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
ATE77177T1 (de) 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPH0563196A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 薄膜半導体装置及びその製造方法並び液晶表示装置
JPH06188265A (ja) 1992-12-22 1994-07-08 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JP4019461B2 (ja) * 1996-09-06 2007-12-12 セイコーエプソン株式会社 カラー表示装置とその製造方法およびカラー液晶装置
JP2004079735A (ja) 2002-08-15 2004-03-11 Nec Corp 薄膜トランジスタの製造方法
TW554539B (en) * 2002-09-09 2003-09-21 Chunghwa Picture Tubes Ltd Thin film transistor source/drain structure and manufacturing method thereof
KR100904266B1 (ko) 2002-12-31 2009-06-25 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조 방법
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20060138403A1 (en) * 2004-12-29 2006-06-29 Gang Yu Organic electronic devices including pixels
US7521710B2 (en) * 2006-02-16 2009-04-21 Idemitsu Kosan Co., Ltd. Organic thin film transistor
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
JP2008311545A (ja) * 2007-06-18 2008-12-25 Hitachi Displays Ltd 表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW395060B (en) * 1996-04-18 2000-06-21 Nippon Electric Co Staggered thin film transistor with an improved ohmic contact structure and its fabricating method
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
US20020085157A1 (en) * 2000-12-28 2002-07-04 Nec Corporation Active matrix addressing liquid-crystal display device
CN1517752A (zh) * 2003-01-09 2004-08-04 ��ʽ����������ʾ�� 显示装置及其制造方法
CN1680992A (zh) * 2004-04-06 2005-10-12 Lg.菲利浦Lcd株式会社 具有驱动电路的液晶显示器件及其制造方法

Also Published As

Publication number Publication date
CN101521210A (zh) 2009-09-02
US8058654B2 (en) 2011-11-15
KR20090093849A (ko) 2009-09-02
JP2009206437A (ja) 2009-09-10
CN101521210B (zh) 2012-05-23
JP5363009B2 (ja) 2013-12-11
TW201001711A (en) 2010-01-01
KR101043115B1 (ko) 2011-06-20
EP2096673A2 (en) 2009-09-02
EP2096673B1 (en) 2021-06-02
US20090218575A1 (en) 2009-09-03
EP2096673A3 (en) 2011-04-20

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