JP5355079B2 - 選択的ビニング機構を備えたcmosイメージセンサの画素 - Google Patents
選択的ビニング機構を備えたcmosイメージセンサの画素 Download PDFInfo
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- JP5355079B2 JP5355079B2 JP2008514728A JP2008514728A JP5355079B2 JP 5355079 B2 JP5355079 B2 JP 5355079B2 JP 2008514728 A JP2008514728 A JP 2008514728A JP 2008514728 A JP2008514728 A JP 2008514728A JP 5355079 B2 JP5355079 B2 JP 5355079B2
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- 238000006243 chemical reaction Methods 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1562—Control of the image-sensor operation, e.g. image processing within the image-sensor for selective scanning, e.g. windowing, zooming
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (3)
- 行方向と列方向に配列された複数の画素であって、前記行方向に配列された少なくとも2つの行方向画素のうちの1つを共通の画素として前記列方向に配列された少なくとも2つの列方向の画素の少なくとも3つの画素がそれぞれ
(a)入射光を変換して電荷を集めるフォトディテクタと、
(b)前記フォトディテクタに接続される電荷−電圧変換領域と、
(c)前記フォトディテクタから前記電荷−電圧変換領域に電荷を転送するための電荷転送ゲートと、
(d)増幅器と、
を含み、前記フォトディテクタの電荷が前記電荷−電圧変換領域に送られ、前記増幅器は前記電荷−電圧変換領域の電圧を検出して増幅する複数の画素と、
前記少なくとも2つの行方向画素の前記電荷−電圧変換領域同士を選択的に接続するための少なくとも1つの行方向選択スイッチと、
前記少なくとも1つの行方向選択スイッチを、他のスイッチである前記少なくとも2つの列方向画素の前記電荷−電圧変換領域同士を選択的に接続するための少なくとも1つの列方向選択スイッチとは独立に動作させて、前記少なくとも3つの画素の前記電荷−電圧変換領域同士を独立的かつ選択的に接続させることで、1つのフォトディテクタに対応する電荷−電圧変換領域静電容量を増加させ当該フォトディテクタの読み出しにおける電荷容量を所望の大きさに増加させる手段と、
を備え、
前記少なくとも1つの行方向選択スイッチは、前記行において隣接する前記2つの画素の前記電荷−電圧変換領域同士を選択的に接続し、前記少なくとも1つの列方向選択スイッチは、前記2つの行方向画素のうちの1つを共通の画素として前記列において隣接する前記2つの画素の前記電荷−電圧変換領域同士を選択的に接続することを特徴とするイメージセンサ。 - 請求項1に記載のイメージセンサであって、
前記少なくとも1つのスイッチはトランジスタを含むことを特徴とするイメージセンサ。 - イメージセンサを備えたカメラであって、
前記イメージセンサは、
行方向と列方向に配列された複数の画素であって、前記行方向に配列された少なくとも2つの行方向画素と、前記2つの行方向画素のうちの1つを共通の画素として前記列方向に配列された少なくとも2つの列方向の画素の少なくとも3つの画素がそれぞれ
(a)入射光を変換して電荷を集めるフォトディテクタと、
(b)前記フォトディテクタに接続される電荷−電圧変換領域と、
(c)前記フォトディテクタから前記電荷−電圧変換領域に電荷を転送するための電荷転送ゲートと、
(d)増幅器と、
を含み、前記フォトディテクタの電荷が前記電荷−電圧変換領域に送られ、前記増幅器は前記電荷−電圧変換領域の電圧を検出して増幅する複数の画素と、
前記少なくとも2つの行方向画素の前記電荷−電圧変換領域同士を選択的に接続するための少なくとも1つの行方向選択スイッチと、
前記少なくとも1つの行方向選択スイッチを、他のスイッチである前記少なくとも2つの列方向画素の前記電荷−電圧変換領域同士を選択的に接続するための少なくとも1つの列方向選択スイッチと独立に動作させて、前記少なくとも3つの画素の前記電荷−電圧変換領域同士を独立的かつ選択的に接続させることで、1つのフォトディテクタに対応する電荷−電圧変換領域静電容量を増加させ当該フォトディテクタの読み出しにおける電荷容量を所望の大きさに増加させる手段と、
を備え、
前記少なくとも1つの行方向選択スイッチは、前記行において隣接する前記2つの画素の前記電荷−電圧変換領域同士を選択的に接続し、前記少なくとも1つの列方向選択スイッチは、前記2つの行方向画素のうちの1つを共通の画素として前記列において隣接する前記2つの画素の前記電荷−電圧変換領域同士を選択的に接続することを特徴とするカメラ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68610405P | 2005-06-01 | 2005-06-01 | |
US60/686,104 | 2005-06-01 | ||
US11/408,640 US7705900B2 (en) | 2005-06-01 | 2006-04-21 | CMOS image sensor pixel with selectable binning and conversion gain |
US11/408,640 | 2006-04-21 | ||
PCT/US2006/020586 WO2006130518A1 (en) | 2005-06-01 | 2006-05-26 | Cmos image sensor pixel with selectable binning |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008546313A JP2008546313A (ja) | 2008-12-18 |
JP2008546313A5 JP2008546313A5 (ja) | 2009-07-09 |
JP5355079B2 true JP5355079B2 (ja) | 2013-11-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514728A Active JP5355079B2 (ja) | 2005-06-01 | 2006-05-26 | 選択的ビニング機構を備えたcmosイメージセンサの画素 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7705900B2 (ja) |
EP (1) | EP1900191B1 (ja) |
JP (1) | JP5355079B2 (ja) |
KR (1) | KR101254360B1 (ja) |
TW (1) | TWI432022B (ja) |
WO (1) | WO2006130518A1 (ja) |
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