JP5352912B2 - 液晶表示装置とその製造方法 - Google Patents

液晶表示装置とその製造方法 Download PDF

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Publication number
JP5352912B2
JP5352912B2 JP2006294638A JP2006294638A JP5352912B2 JP 5352912 B2 JP5352912 B2 JP 5352912B2 JP 2006294638 A JP2006294638 A JP 2006294638A JP 2006294638 A JP2006294638 A JP 2006294638A JP 5352912 B2 JP5352912 B2 JP 5352912B2
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JP
Japan
Prior art keywords
layer
electrode
active layer
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006294638A
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English (en)
Japanese (ja)
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JP2007123906A5 (enExample
JP2007123906A (ja
Inventor
秉 濬 金
成 勳 梁
ミン 錫 オ
在 鎬 崔
龍 模 崔
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
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Publication of JP2007123906A5 publication Critical patent/JP2007123906A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006294638A 2005-10-28 2006-10-30 液晶表示装置とその製造方法 Expired - Fee Related JP5352912B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0102429 2005-10-28
KR1020050102429A KR101158896B1 (ko) 2005-10-28 2005-10-28 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널

Publications (3)

Publication Number Publication Date
JP2007123906A JP2007123906A (ja) 2007-05-17
JP2007123906A5 JP2007123906A5 (enExample) 2009-11-12
JP5352912B2 true JP5352912B2 (ja) 2013-11-27

Family

ID=37995068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006294638A Expired - Fee Related JP5352912B2 (ja) 2005-10-28 2006-10-30 液晶表示装置とその製造方法

Country Status (5)

Country Link
US (2) US7615867B2 (enExample)
JP (1) JP5352912B2 (enExample)
KR (1) KR101158896B1 (enExample)
CN (1) CN1956225B (enExample)
TW (1) TWI413256B (enExample)

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KR20030086166A (ko) * 2002-05-03 2003-11-07 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2009105390A (ja) * 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2009103732A (ja) * 2007-10-19 2009-05-14 Sony Corp 表示装置およびその製造方法
KR101432109B1 (ko) * 2007-10-31 2014-08-22 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법
KR101485585B1 (ko) 2008-02-14 2015-01-23 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR101392162B1 (ko) * 2008-02-15 2014-05-08 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
JP2010249935A (ja) 2009-04-13 2010-11-04 Sony Corp 表示装置
USD632657S1 (en) * 2009-07-28 2011-02-15 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633450S1 (en) * 2009-07-28 2011-03-01 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633054S1 (en) * 2009-07-28 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633055S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633057S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633451S1 (en) * 2009-09-25 2011-03-01 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633056S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
KR101638977B1 (ko) * 2009-11-13 2016-07-12 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
KR101635212B1 (ko) * 2009-12-14 2016-06-30 엘지디스플레이 주식회사 플렉서블 유기발광다이오드 표시장치와 그 제조방법
USD638379S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD643820S1 (en) * 2010-04-09 2011-08-23 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD642996S1 (en) * 2010-04-09 2011-08-09 Panasonic Electric Works Co., Ltd. Electroluminescence apparatus
USD638383S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD637165S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
JP1437719S (enExample) * 2010-04-09 2015-03-30
USD638382S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD637166S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD638381S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
US9178071B2 (en) * 2010-09-13 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013026345A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体装置の製造方法
CN103229301B (zh) 2011-11-29 2017-02-08 株式会社日本有机雷特显示器 薄膜晶体管以及薄膜晶体管的制造方法
USD742841S1 (en) * 2013-03-26 2015-11-10 Sony Corporation Touch sensitive device
KR102197854B1 (ko) 2014-05-13 2021-01-05 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시기판 및 이의 제조방법
KR102279884B1 (ko) * 2014-12-05 2021-07-22 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR20190070380A (ko) 2017-12-12 2019-06-21 삼성디스플레이 주식회사 표시 장치
CN111490161A (zh) * 2020-04-24 2020-08-04 电子科技大学 一种有机薄场效应晶体管及其制备方法
CN113327935B (zh) * 2021-05-21 2022-07-12 Tcl华星光电技术有限公司 显示面板及其制备方法

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JPH0548106A (ja) * 1991-02-20 1993-02-26 Alps Electric Co Ltd 薄膜トランジスタ及びその製造方法
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Also Published As

Publication number Publication date
US8088653B2 (en) 2012-01-03
KR101158896B1 (ko) 2012-06-25
KR20070045770A (ko) 2007-05-02
CN1956225A (zh) 2007-05-02
US7615867B2 (en) 2009-11-10
TW200717818A (en) 2007-05-01
US20070096097A1 (en) 2007-05-03
CN1956225B (zh) 2010-08-18
JP2007123906A (ja) 2007-05-17
TWI413256B (zh) 2013-10-21
US20100062574A1 (en) 2010-03-11

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