CN1956225A - 薄膜晶体管及其制造方法、具有薄膜晶体管的液晶显示面板及电发光显示面板 - Google Patents
薄膜晶体管及其制造方法、具有薄膜晶体管的液晶显示面板及电发光显示面板 Download PDFInfo
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- CN1956225A CN1956225A CNA200610152496XA CN200610152496A CN1956225A CN 1956225 A CN1956225 A CN 1956225A CN A200610152496X A CNA200610152496X A CN A200610152496XA CN 200610152496 A CN200610152496 A CN 200610152496A CN 1956225 A CN1956225 A CN 1956225A
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- articulamentum
- active layer
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- thin
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0102429 | 2005-10-28 | ||
KR1020050102429A KR101158896B1 (ko) | 2005-10-28 | 2005-10-28 | 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 |
KR1020050102429 | 2005-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1956225A true CN1956225A (zh) | 2007-05-02 |
CN1956225B CN1956225B (zh) | 2010-08-18 |
Family
ID=37995068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610152496XA Expired - Fee Related CN1956225B (zh) | 2005-10-28 | 2006-10-09 | 薄膜晶体管及其制造方法、具有薄膜晶体管的液晶显示面板及电发光显示面板 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7615867B2 (zh) |
JP (1) | JP5352912B2 (zh) |
KR (1) | KR101158896B1 (zh) |
CN (1) | CN1956225B (zh) |
TW (1) | TWI413256B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101355089B (zh) * | 2007-07-26 | 2012-06-27 | 株式会社半导体能源研究所 | 显示装置 |
CN101339960B (zh) * | 2007-07-06 | 2012-07-04 | 株式会社半导体能源研究所 | 发光装置 |
CN101740398B (zh) * | 2008-11-07 | 2016-02-03 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
CN105679832A (zh) * | 2014-12-05 | 2016-06-15 | 三星显示有限公司 | 薄膜晶体管基板及其制造方法 |
CN111490161A (zh) * | 2020-04-24 | 2020-08-04 | 电子科技大学 | 一种有机薄场效应晶体管及其制备方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030086166A (ko) * | 2002-05-03 | 2003-11-07 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
JP2009105390A (ja) * | 2007-10-05 | 2009-05-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2009103732A (ja) | 2007-10-19 | 2009-05-14 | Sony Corp | 表示装置およびその製造方法 |
KR101432109B1 (ko) * | 2007-10-31 | 2014-08-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법 |
KR101485585B1 (ko) * | 2008-02-14 | 2015-01-23 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR101392162B1 (ko) * | 2008-02-15 | 2014-05-08 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
JP2010249935A (ja) | 2009-04-13 | 2010-11-04 | Sony Corp | 表示装置 |
KR101638977B1 (ko) * | 2009-11-13 | 2016-07-12 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
KR101635212B1 (ko) * | 2009-12-14 | 2016-06-30 | 엘지디스플레이 주식회사 | 플렉서블 유기발광다이오드 표시장치와 그 제조방법 |
US9178071B2 (en) * | 2010-09-13 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013026345A (ja) * | 2011-07-19 | 2013-02-04 | Toshiba Corp | 半導体装置の製造方法 |
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2005
- 2005-10-28 KR KR1020050102429A patent/KR101158896B1/ko not_active IP Right Cessation
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2006
- 2006-09-14 TW TW095134088A patent/TWI413256B/zh not_active IP Right Cessation
- 2006-10-03 US US11/538,394 patent/US7615867B2/en not_active Expired - Fee Related
- 2006-10-09 CN CN200610152496XA patent/CN1956225B/zh not_active Expired - Fee Related
- 2006-10-30 JP JP2006294638A patent/JP5352912B2/ja not_active Expired - Fee Related
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Cited By (6)
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CN101339960B (zh) * | 2007-07-06 | 2012-07-04 | 株式会社半导体能源研究所 | 发光装置 |
US8334537B2 (en) | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
CN101355089B (zh) * | 2007-07-26 | 2012-06-27 | 株式会社半导体能源研究所 | 显示装置 |
CN101740398B (zh) * | 2008-11-07 | 2016-02-03 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
CN105679832A (zh) * | 2014-12-05 | 2016-06-15 | 三星显示有限公司 | 薄膜晶体管基板及其制造方法 |
CN111490161A (zh) * | 2020-04-24 | 2020-08-04 | 电子科技大学 | 一种有机薄场效应晶体管及其制备方法 |
Also Published As
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CN1956225B (zh) | 2010-08-18 |
US20100062574A1 (en) | 2010-03-11 |
JP2007123906A (ja) | 2007-05-17 |
KR20070045770A (ko) | 2007-05-02 |
US20070096097A1 (en) | 2007-05-03 |
TWI413256B (zh) | 2013-10-21 |
US7615867B2 (en) | 2009-11-10 |
US8088653B2 (en) | 2012-01-03 |
TW200717818A (en) | 2007-05-01 |
JP5352912B2 (ja) | 2013-11-27 |
KR101158896B1 (ko) | 2012-06-25 |
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