KR101158896B1 - 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 - Google Patents

박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 Download PDF

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KR101158896B1
KR101158896B1 KR1020050102429A KR20050102429A KR101158896B1 KR 101158896 B1 KR101158896 B1 KR 101158896B1 KR 1020050102429 A KR1020050102429 A KR 1020050102429A KR 20050102429 A KR20050102429 A KR 20050102429A KR 101158896 B1 KR101158896 B1 KR 101158896B1
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South Korea
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layer
thin film
film transistor
connection layer
driving
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20070045770A (ko
Inventor
김병준
양성훈
오민석
최재호
최용모
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삼성전자주식회사
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Priority to KR1020050102429A priority Critical patent/KR101158896B1/ko
Priority to TW095134088A priority patent/TWI413256B/zh
Priority to US11/538,394 priority patent/US7615867B2/en
Priority to CN200610152496XA priority patent/CN1956225B/zh
Priority to JP2006294638A priority patent/JP5352912B2/ja
Publication of KR20070045770A publication Critical patent/KR20070045770A/ko
Priority to US12/604,318 priority patent/US8088653B2/en
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Publication of KR101158896B1 publication Critical patent/KR101158896B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020050102429A 2005-10-28 2005-10-28 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 Expired - Fee Related KR101158896B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050102429A KR101158896B1 (ko) 2005-10-28 2005-10-28 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널
TW095134088A TWI413256B (zh) 2005-10-28 2006-09-14 薄膜電晶體，其製造方法，具有該薄膜電晶體之液晶顯示器面板及具有該薄膜電晶體之電激發光顯示器面板
US11/538,394 US7615867B2 (en) 2005-10-28 2006-10-03 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
CN200610152496XA CN1956225B (zh) 2005-10-28 2006-10-09 薄膜晶体管及其制造方法、具有薄膜晶体管的液晶显示面板及电发光显示面板
JP2006294638A JP5352912B2 (ja) 2005-10-28 2006-10-30 液晶表示装置とその製造方法
US12/604,318 US8088653B2 (en) 2005-10-28 2009-10-22 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050102429A KR101158896B1 (ko) 2005-10-28 2005-10-28 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널

Publications (2)

Publication Number Publication Date
KR20070045770A KR20070045770A (ko) 2007-05-02
KR101158896B1 true KR101158896B1 (ko) 2012-06-25

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KR1020050102429A Expired - Fee Related KR101158896B1 (ko) 2005-10-28 2005-10-28 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널

Country Status (5)

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US (2) US7615867B2 (enExample)
JP (1) JP5352912B2 (enExample)
KR (1) KR101158896B1 (enExample)
CN (1) CN1956225B (enExample)
TW (1) TWI413256B (enExample)

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KR101432109B1 (ko) * 2007-10-31 2014-08-22 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법
KR101485585B1 (ko) 2008-02-14 2015-01-23 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR101392162B1 (ko) * 2008-02-15 2014-05-08 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
JP2010249935A (ja) 2009-04-13 2010-11-04 Sony Corp 表示装置
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USD633054S1 (en) * 2009-07-28 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633055S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633057S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633451S1 (en) * 2009-09-25 2011-03-01 Panasonic Electric Works Co., Ltd. Electro luminescence module
USD633056S1 (en) * 2009-09-25 2011-02-22 Panasonic Electric Works Co., Ltd. Electro luminescence module
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KR101635212B1 (ko) * 2009-12-14 2016-06-30 엘지디스플레이 주식회사 플렉서블 유기발광다이오드 표시장치와 그 제조방법
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USD642996S1 (en) * 2010-04-09 2011-08-09 Panasonic Electric Works Co., Ltd. Electroluminescence apparatus
USD638383S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD637165S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
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USD638382S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD637166S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD638381S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
US9178071B2 (en) * 2010-09-13 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013026345A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体装置の製造方法
CN103229301B (zh) 2011-11-29 2017-02-08 株式会社日本有机雷特显示器 薄膜晶体管以及薄膜晶体管的制造方法
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KR102197854B1 (ko) 2014-05-13 2021-01-05 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시기판 및 이의 제조방법
KR102279884B1 (ko) * 2014-12-05 2021-07-22 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR20190070380A (ko) 2017-12-12 2019-06-21 삼성디스플레이 주식회사 표시 장치
CN111490161A (zh) * 2020-04-24 2020-08-04 电子科技大学 一种有机薄场效应晶体管及其制备方法
CN113327935B (zh) * 2021-05-21 2022-07-12 Tcl华星光电技术有限公司 显示面板及其制备方法

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Also Published As

Publication number Publication date
JP5352912B2 (ja) 2013-11-27
US8088653B2 (en) 2012-01-03
KR20070045770A (ko) 2007-05-02
CN1956225A (zh) 2007-05-02
US7615867B2 (en) 2009-11-10
TW200717818A (en) 2007-05-01
US20070096097A1 (en) 2007-05-03
CN1956225B (zh) 2010-08-18
JP2007123906A (ja) 2007-05-17
TWI413256B (zh) 2013-10-21
US20100062574A1 (en) 2010-03-11

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