TWI413256B - 薄膜電晶體，其製造方法，具有該薄膜電晶體之液晶顯示器面板及具有該薄膜電晶體之電激發光顯示器面板 - Google Patents
薄膜電晶體，其製造方法，具有該薄膜電晶體之液晶顯示器面板及具有該薄膜電晶體之電激發光顯示器面板 Download PDFInfo
- Publication number
- TWI413256B TWI413256B TW095134088A TW95134088A TWI413256B TW I413256 B TWI413256 B TW I413256B TW 095134088 A TW095134088 A TW 095134088A TW 95134088 A TW95134088 A TW 95134088A TW I413256 B TWI413256 B TW I413256B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- driving
- gate
- film transistor
- buffer layer
- Prior art date
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050102429A KR101158896B1 (ko) | 2005-10-28 | 2005-10-28 | 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200717818A TW200717818A (en) | 2007-05-01 |
| TWI413256B true TWI413256B (zh) | 2013-10-21 |
Family
ID=37995068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095134088A TWI413256B (zh) | 2005-10-28 | 2006-09-14 | 薄膜電晶體，其製造方法，具有該薄膜電晶體之液晶顯示器面板及具有該薄膜電晶體之電激發光顯示器面板 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7615867B2 (enExample) |
| JP (1) | JP5352912B2 (enExample) |
| KR (1) | KR101158896B1 (enExample) |
| CN (1) | CN1956225B (enExample) |
| TW (1) | TWI413256B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030086166A (ko) * | 2002-05-03 | 2003-11-07 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
| US8334537B2 (en) * | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7897971B2 (en) * | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2009105390A (ja) * | 2007-10-05 | 2009-05-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2009103732A (ja) * | 2007-10-19 | 2009-05-14 | Sony Corp | 表示装置およびその製造方法 |
| KR101432109B1 (ko) * | 2007-10-31 | 2014-08-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법 |
| KR101485585B1 (ko) | 2008-02-14 | 2015-01-23 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| KR101392162B1 (ko) * | 2008-02-15 | 2014-05-08 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
| TWI467663B (zh) | 2008-11-07 | 2015-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置和該半導體裝置的製造方法 |
| JP2010249935A (ja) | 2009-04-13 | 2010-11-04 | Sony Corp | 表示装置 |
| USD633450S1 (en) * | 2009-07-28 | 2011-03-01 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD633054S1 (en) * | 2009-07-28 | 2011-02-22 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD632657S1 (en) * | 2009-07-28 | 2011-02-15 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD633451S1 (en) * | 2009-09-25 | 2011-03-01 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD633057S1 (en) * | 2009-09-25 | 2011-02-22 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD633056S1 (en) * | 2009-09-25 | 2011-02-22 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| USD633055S1 (en) * | 2009-09-25 | 2011-02-22 | Panasonic Electric Works Co., Ltd. | Electro luminescence module |
| KR101638977B1 (ko) * | 2009-11-13 | 2016-07-12 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| KR101635212B1 (ko) * | 2009-12-14 | 2016-06-30 | 엘지디스플레이 주식회사 | 플렉서블 유기발광다이오드 표시장치와 그 제조방법 |
| USD638383S1 (en) * | 2010-04-09 | 2011-05-24 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| JP1437719S (enExample) * | 2010-04-09 | 2015-03-30 | ||
| USD642996S1 (en) * | 2010-04-09 | 2011-08-09 | Panasonic Electric Works Co., Ltd. | Electroluminescence apparatus |
| USD643820S1 (en) * | 2010-04-09 | 2011-08-23 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| USD637166S1 (en) * | 2010-04-09 | 2011-05-03 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| USD638382S1 (en) * | 2010-04-09 | 2011-05-24 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| USD638379S1 (en) * | 2010-04-09 | 2011-05-24 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| USD637165S1 (en) * | 2010-04-09 | 2011-05-03 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| USD638381S1 (en) * | 2010-04-09 | 2011-05-24 | Panasonic Electric Works Co., Ltd. | Electroluminescence module |
| US9178071B2 (en) * | 2010-09-13 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2013026345A (ja) * | 2011-07-19 | 2013-02-04 | Toshiba Corp | 半導体装置の製造方法 |
| WO2013080247A1 (ja) | 2011-11-29 | 2013-06-06 | パナソニック株式会社 | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
| USD742841S1 (en) * | 2013-03-26 | 2015-11-10 | Sony Corporation | Touch sensitive device |
| KR102197854B1 (ko) | 2014-05-13 | 2021-01-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 표시기판 및 이의 제조방법 |
| KR102279884B1 (ko) * | 2014-12-05 | 2021-07-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
| KR20190070380A (ko) | 2017-12-12 | 2019-06-21 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN111490161A (zh) * | 2020-04-24 | 2020-08-04 | 电子科技大学 | 一种有机薄场效应晶体管及其制备方法 |
| CN113327935B (zh) * | 2021-05-21 | 2022-07-12 | Tcl华星光电技术有限公司 | 显示面板及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0548106A (ja) * | 1991-02-20 | 1993-02-26 | Alps Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| US5942767A (en) * | 1995-11-21 | 1999-08-24 | Samsung Electronics Co., Ltd. | Thin film transistors including silicide layer and multilayer conductive electrodes |
| US6747288B2 (en) * | 2000-03-08 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20050014319A1 (en) * | 2003-07-18 | 2005-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20050161740A1 (en) * | 2003-12-15 | 2005-07-28 | Lg.Philips Lcd Co., Ltd. | Dual panel-type organic electroluminescent device and method for fabricating the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03220529A (ja) * | 1990-01-25 | 1991-09-27 | Nec Corp | アクティブマトリックス液晶ディスプレイの製造方法 |
| JP2809153B2 (ja) * | 1995-09-28 | 1998-10-08 | 日本電気株式会社 | 液晶表示装置及びその製造方法 |
| JP3873158B2 (ja) * | 1998-06-11 | 2007-01-24 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
| JP3916334B2 (ja) * | 1999-01-13 | 2007-05-16 | シャープ株式会社 | 薄膜トランジスタ |
| JP2001147424A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子 |
| KR101090252B1 (ko) * | 2004-09-24 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
-
2005
- 2005-10-28 KR KR1020050102429A patent/KR101158896B1/ko not_active Expired - Fee Related
-
2006
- 2006-09-14 TW TW095134088A patent/TWI413256B/zh not_active IP Right Cessation
- 2006-10-03 US US11/538,394 patent/US7615867B2/en not_active Expired - Fee Related
- 2006-10-09 CN CN200610152496XA patent/CN1956225B/zh not_active Expired - Fee Related
- 2006-10-30 JP JP2006294638A patent/JP5352912B2/ja not_active Expired - Fee Related
-
2009
- 2009-10-22 US US12/604,318 patent/US8088653B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0548106A (ja) * | 1991-02-20 | 1993-02-26 | Alps Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| US5942767A (en) * | 1995-11-21 | 1999-08-24 | Samsung Electronics Co., Ltd. | Thin film transistors including silicide layer and multilayer conductive electrodes |
| US6747288B2 (en) * | 2000-03-08 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20050014319A1 (en) * | 2003-07-18 | 2005-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20050161740A1 (en) * | 2003-12-15 | 2005-07-28 | Lg.Philips Lcd Co., Ltd. | Dual panel-type organic electroluminescent device and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5352912B2 (ja) | 2013-11-27 |
| US20100062574A1 (en) | 2010-03-11 |
| US7615867B2 (en) | 2009-11-10 |
| KR20070045770A (ko) | 2007-05-02 |
| CN1956225B (zh) | 2010-08-18 |
| US20070096097A1 (en) | 2007-05-03 |
| CN1956225A (zh) | 2007-05-02 |
| TW200717818A (en) | 2007-05-01 |
| JP2007123906A (ja) | 2007-05-17 |
| US8088653B2 (en) | 2012-01-03 |
| KR101158896B1 (ko) | 2012-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |