JP5642142B2 - 薄膜トランジスタ、薄膜トランジスタアレイ基板及びそれらの製造方法 - Google Patents
薄膜トランジスタ、薄膜トランジスタアレイ基板及びそれらの製造方法 Download PDFInfo
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- JP5642142B2 JP5642142B2 JP2012268197A JP2012268197A JP5642142B2 JP 5642142 B2 JP5642142 B2 JP 5642142B2 JP 2012268197 A JP2012268197 A JP 2012268197A JP 2012268197 A JP2012268197 A JP 2012268197A JP 5642142 B2 JP5642142 B2 JP 5642142B2
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- 239000000758 substrate Substances 0.000 title claims description 76
- 239000010409 thin film Substances 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010949 copper Substances 0.000 claims description 220
- 229910052802 copper Inorganic materials 0.000 claims description 168
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 159
- 229910052751 metal Inorganic materials 0.000 claims description 72
- 239000002184 metal Substances 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 64
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 239000010936 titanium Substances 0.000 claims description 38
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- -1 copper nitride Chemical class 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 238000009832 plasma treatment Methods 0.000 claims description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 22
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 21
- 229910052750 molybdenum Inorganic materials 0.000 claims description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 269
- 239000010408 film Substances 0.000 description 89
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- 239000011241 protective layer Substances 0.000 description 20
- 150000002431 hydrogen Chemical class 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 11
- 229910021360 copper silicide Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 229910001431 copper ion Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 241001279686 Allium moly Species 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1に、Cuを含むゲート電極から、SiO2からなる絶縁層が剥離するという問題がある。これは、SiO2とCuの間の低い接着性に起因する。これによってCuイオンのSiO2への拡散がもたらされ、絶縁特性が低下してしまう。第2に、Cuを含むゲート電極が基板から剥離するという他の剥離の問題がある。この問題はCuと、ガラス、プラスチック等からなる基板との間の低い接着性に起因する。第3に、Cuは酸化され易いため、Cuを含むゲート電極の酸素及び水(H2O)に対する耐性を改善する必要がある。本発明は上記の問題を解決するものである。
図1は、本発明の第1実施例に係る薄膜トランジスタを備えるアレイ基板の一つの画素領域を概略に示す断面図である。
平面型表示装置の中で有機発光素子(以下、OLEDと言う)は自発光素子であって、非発光素子の液晶表示装置に用いられるバックライトが要らないため、軽量・薄型が可能である。
Claims (8)
- 薄膜トランジスタを製造する方法であって、
基板上に第1金属層及び該第1金属層上に銅からなる第2金属層を連続して形成する工程と、
前記第2金属層上に窒化銅層を形成するための、アンモニアガスと窒素ガスの混合ガス、アンモニアガス、又は窒素ガスを用いるプラズマ処理工程及び前記第2金属層の表面上の結晶粒が小さく稠密になるようにする加熱工程と、
前記窒化銅層、前記第2金属層及び前記第1金属層をパターニングしてゲート電極を形成する工程と、
前記ゲート電極を含む前記基板上に窒化シリコンからなる第1ゲート絶縁層を形成する工程と、
前記第1ゲート絶縁層上に酸化シリコンからなる第2ゲート絶縁層を形成する工程と、
前記第2ゲート絶縁層上に酸化半導体材料で形成された半導体層を形成する工程と、
前記半導体層上に、互いに離隔されたソース電極及びドレイン電極を形成する工程
を備える方法。 - 薄膜トランジスタを製造する方法であって、
基板上に第1金属層及び該第1金属層上に銅からなる第2金属層を連続して形成する工程と、
前記第2金属層上に窒化銅層を形成するプラズマ処理工程と、
前記窒化銅層、前記第2金属層及び前記第1金属層をパターニングしてゲート電極を形成する工程と、
前記ゲート電極を含む前記基板上に窒化シリコンからなる第1ゲート絶縁層を形成する工程と、
前記第1ゲート絶縁層上に酸化シリコンからなる第2ゲート絶縁層を形成する工程と、
前記第2ゲート絶縁層上に酸化半導体材料で形成された半導体層を形成する工程と、
前記半導体層上に、互いに離隔されたソース電極及びドレイン電極を形成する工程
を備え、
前記第1ゲート絶縁層を形成する工程が、前記第1ゲート絶縁層が20wt%以下の含有率で水素を含むように窒素ガス及びシランガスを用いて窒化シリコンを蒸着する工程を含み、
前記第2金属層は加熱されることにより、前記第2金属層の表面上の結晶粒が小さく稠密にされている、方法。 - 前記第1金属層はモリブデン(Mo)、チタン(Ti)及びモリチタン(MoTi)合金のうちのいずれかの一つからなる、請求項1又は2に記載の方法。
- 前記プラズマ処理工程は、アンモニアガスと窒素ガスの混合ガス、アンモニアガス、又は窒素ガスを用いるものである、請求項2に記載の方法。
- 薄膜トランジスタ(TFT)アレイ基板を製造する方法であって、
基板上に第1金属層及び該第1金属層上に銅からなる第2金属層を連続して形成する工程と、
前記第2金属層上に窒化銅層を形成するための、アンモニアガスと窒素ガスの混合ガス、アンモニアガス、又は窒素ガスを用いるプラズマ処理工程及び前記第2金属層の表面上の結晶粒が小さく稠密になるようにする加熱工程と、
前記窒化銅層、前記第2金属層及び前記第1金属層をパターニングしてゲート配線及びゲート電極を形成する工程と、
前記ゲート配線及び前記ゲート電極を含む前記基板上に窒化シリコンからなる第1ゲート絶縁層を形成する工程と、
前記第1ゲート絶縁層上に酸化シリコンからなる第2ゲート絶縁層を形成する工程と、
前記第2ゲート絶縁層上に酸化半導体材料で形成された半導体層を形成する工程と、
前記半導体層にエッチストッパーを形成する工程と、
前記半導体層上にソース電極及びドレイン電極を形成し、前記第2ゲート絶縁層上にデータ配線を形成する工程であって、該ソース電極は該ドレイン電極から前記エッチストッパーを挟んで離隔されるとともに該データ配線に接続される、工程と、
前記データ配線に接続される画素電極を形成する工程
を備える方法。 - 薄膜トランジスタ(TFT)アレイ基板を製造する方法であって、
基板上に第1金属層及び該第1金属層上に銅からなる第2金属層を連続して形成する工程と、
前記第2金属層上に窒化銅層を形成するプラズマ処理工程と、
前記窒化銅層、前記第2金属層及び前記第1金属層をパターニングしてゲート配線及びゲート電極を形成する工程と、
前記ゲート配線及び前記ゲート電極を含む前記基板上に窒化シリコンからなる第1ゲート絶縁層を形成する工程と、
前記第1ゲート絶縁層上に酸化シリコンからなる第2ゲート絶縁層を形成する工程と、
前記第2ゲート絶縁層上に酸化半導体材料で形成された半導体層を形成する工程と、
前記半導体層にエッチストッパーを形成する工程と、
前記半導体層上にソース電極及びドレイン電極を形成し、前記第2ゲート絶縁層上にデータ配線を形成する工程であって、該ソース電極は該ドレイン電極から前記エッチストッパーを挟んで離隔されるとともに該データ配線に接続される、工程と、
前記データ配線に接続される画素電極を形成する工程
を備え、
前記第1ゲート絶縁層を形成する工程が、前記第1ゲート絶縁層が20wt%以下の含有率で水素を含むように窒素ガス及びシランガスを用いて窒化シリコンを蒸着する工程を含み、
前記第2金属層は加熱されることにより、前記第2金属層の表面上の結晶粒が小さく稠密にされている、方法。 - 前記第1金属層はモリブデン(Mo)、チタン(Ti)及びモリチタン(MoTi)合金のうちのいずれかの一つからなる、請求項5又は6に記載の方法。
- 前記プラズマ処理工程は、アンモニアガスと窒素ガスの混合ガス、アンモニアガス、又は窒素ガスを用いるものである、請求項6に記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102050434B1 (ko) * | 2012-10-31 | 2019-11-29 | 엘지디스플레이 주식회사 | 플렉서블 유기전계 발광소자 및 그 제조방법 |
CN103887343B (zh) * | 2012-12-21 | 2017-06-09 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
KR102132412B1 (ko) * | 2013-10-17 | 2020-07-09 | 엘지디스플레이 주식회사 | 표시장치용 박막 트랜지스터 어레이 기판 및 그 제조방법 |
KR102118461B1 (ko) * | 2013-11-25 | 2020-06-09 | 엘지디스플레이 주식회사 | 산화물 박막트랜지스터를 포함한 어레이기판 및 그 제조방법 |
CN104022160B (zh) * | 2014-06-20 | 2017-04-05 | 华北水利水电大学 | 高价态过渡金属掺杂的氧化锌基半导体材料及薄膜晶体管 |
CN104091810A (zh) * | 2014-06-30 | 2014-10-08 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
JP2016111104A (ja) * | 2014-12-03 | 2016-06-20 | 株式会社Joled | 薄膜半導体基板の製造方法 |
CN104716195A (zh) * | 2015-03-13 | 2015-06-17 | 北京大学 | 一种掺钼氧化锌薄膜晶体管及其制备方法 |
CN104716201A (zh) * | 2015-04-03 | 2015-06-17 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示设备 |
KR102458864B1 (ko) * | 2015-10-16 | 2022-10-26 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR20170050729A (ko) * | 2015-10-30 | 2017-05-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102517127B1 (ko) | 2015-12-02 | 2023-04-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 유기 발광 표시 장치 |
CN105742189B (zh) * | 2016-01-27 | 2019-07-23 | 青岛中微创芯电子有限公司 | 一种氧化物半导体薄膜晶体管的制备方法 |
CN105914227A (zh) * | 2016-06-01 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种走线结构、阵列基板及其制备方法、显示面板 |
CN107452748B (zh) * | 2016-06-01 | 2020-03-17 | 群创光电股份有限公司 | 元件基板以及显示装置 |
KR20180076689A (ko) * | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | 표시 장치 |
CN107068895B (zh) * | 2016-12-28 | 2019-09-24 | 上海天马微电子有限公司 | 一种显示面板及其显示器 |
CN106990592A (zh) | 2017-03-14 | 2017-07-28 | 惠科股份有限公司 | 一种显示面板及其制造方法 |
CN107482019A (zh) * | 2017-08-10 | 2017-12-15 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管阵列基板及其制备方法和液晶面板 |
KR20190114158A (ko) | 2018-03-29 | 2019-10-10 | 한국과학기술원 | 악성 임베디드 펌웨어 분석 및 탐지를 위한 동적 분석 방법 |
CN108598174A (zh) * | 2018-05-09 | 2018-09-28 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板的制作方法 |
KR20200092508A (ko) | 2019-01-15 | 2020-08-04 | 한국과학기술원 | IoT 기기 악성코드 분석을 위한 대규모 허니팟 시스템 |
CN109979946B (zh) * | 2019-03-15 | 2021-06-11 | 惠科股份有限公司 | 一种阵列基板及其制造方法和显示面板 |
KR102092550B1 (ko) * | 2019-11-14 | 2020-03-24 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 제조 방법 |
TW202243178A (zh) * | 2021-04-23 | 2022-11-01 | 元太科技工業股份有限公司 | 電子裝置及其線路結構 |
CN114188388A (zh) * | 2021-12-09 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | 显示面板、显示装置以及显示面板的制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679567B2 (ja) * | 1997-09-30 | 2005-08-03 | 三洋電機株式会社 | 薄膜トランジスタの製造方法 |
CN1285107C (zh) * | 2003-06-12 | 2006-11-15 | 统宝光电股份有限公司 | 低温多晶硅薄膜晶体管的制造方法 |
KR101167661B1 (ko) * | 2005-07-15 | 2012-07-23 | 삼성전자주식회사 | 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법 |
KR101318436B1 (ko) * | 2006-06-14 | 2013-10-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
KR20080008562A (ko) * | 2006-07-20 | 2008-01-24 | 삼성전자주식회사 | 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 |
JP5412026B2 (ja) * | 2006-09-11 | 2014-02-12 | 三星ディスプレイ株式會社 | 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 |
US7919795B2 (en) * | 2006-12-21 | 2011-04-05 | Samsung Electronics Co., Ltd. | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate |
JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
US7678715B2 (en) * | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
JP5537787B2 (ja) * | 2008-09-01 | 2014-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2011068016A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8664658B2 (en) * | 2010-05-14 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20110133251A (ko) * | 2010-06-04 | 2011-12-12 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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