JP5350571B2 - マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 - Google Patents
マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 Download PDFInfo
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- JP5350571B2 JP5350571B2 JP2002521570A JP2002521570A JP5350571B2 JP 5350571 B2 JP5350571 B2 JP 5350571B2 JP 2002521570 A JP2002521570 A JP 2002521570A JP 2002521570 A JP2002521570 A JP 2002521570A JP 5350571 B2 JP5350571 B2 JP 5350571B2
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- organic silicate
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- film
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims description 77
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 238000004377 microelectronic Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 75
- 229910000077 silane Inorganic materials 0.000 claims abstract description 41
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 39
- 125000003118 aryl group Chemical group 0.000 claims abstract description 32
- 239000000203 mixture Substances 0.000 claims abstract description 31
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 20
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- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- -1 divinyl siloxane bis-benzocyclobutene Chemical compound 0.000 claims description 13
- 230000007062 hydrolysis Effects 0.000 claims description 13
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- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 17
- 150000001282 organosilanes Chemical class 0.000 description 17
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- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 7
- 239000001837 2-hydroxy-3-methylcyclopent-2-en-1-one Substances 0.000 description 6
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-AHCXROLUSA-N copper-60 Chemical compound [60Cu] RYGMFSIKBFXOCR-AHCXROLUSA-N 0.000 description 3
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- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
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- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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PCT/US2001/025977 WO2002016477A2 (en) | 2000-08-21 | 2001-08-20 | Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
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EP1190277B1 (en) | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Semiconductor having spin-on-glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
JP2004509468A (ja) * | 2000-09-13 | 2004-03-25 | シップレーカンパニー エル エル シー | 電子デバイスの製造 |
US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
JP2002299337A (ja) * | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
US6839808B2 (en) * | 2001-07-06 | 2005-01-04 | Juniper Networks, Inc. | Processing cluster having multiple compute engines and shared tier one caches |
US6699792B1 (en) * | 2001-07-17 | 2004-03-02 | Advanced Micro Devices, Inc. | Polymer spacers for creating small geometry space and method of manufacture thereof |
DE60217247T2 (de) * | 2001-09-28 | 2007-10-04 | Jsr Corp. | Gestapelte Schicht, isolierender Film und Substrate für Halbleiter |
US6933586B2 (en) * | 2001-12-13 | 2005-08-23 | International Business Machines Corporation | Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens |
US6734096B2 (en) * | 2002-01-17 | 2004-05-11 | International Business Machines Corporation | Fine-pitch device lithography using a sacrificial hardmask |
US6815333B2 (en) | 2002-04-02 | 2004-11-09 | Dow Global Technologies Inc. | Tri-layer masking architecture for patterning dual damascene interconnects |
US6806182B2 (en) * | 2002-05-01 | 2004-10-19 | International Business Machines Corporation | Method for eliminating via resistance shift in organic ILD |
US6846756B2 (en) * | 2002-07-30 | 2005-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers |
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CN1447981B (zh) | 2013-08-07 |
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KR100795714B1 (ko) | 2008-01-21 |
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EP1837902B1 (en) | 2017-05-24 |
US20060063393A1 (en) | 2006-03-23 |
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US7115531B2 (en) | 2006-10-03 |
EP1837902A2 (en) | 2007-09-26 |
JP2004506797A (ja) | 2004-03-04 |
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