JP5327555B2 - 半導体セラミック及び正特性サーミスタ - Google Patents
半導体セラミック及び正特性サーミスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 16
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 23
- 239000011734 sodium Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 21
- 239000012298 atmosphere Substances 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 16
- 229910001415 sodium ion Inorganic materials 0.000 description 13
- 239000002994 raw material Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910001422 barium ion Inorganic materials 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910001424 calcium ion Inorganic materials 0.000 description 5
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 3
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 3
- 229910001413 alkali metal ion Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910003322 NiCu Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000002697 manganese compounds Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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Description
ここで、Lnは半導体化剤となる希土類元素を示している。この希土類元素Lnとしては、半導体化剤としての作用を奏するものであれば、特に限定されるものではなく、La等を好んで使用することができる。
0.05≦y≦0.20…(2)
AサイトとBサイトのモル比mを1.001以上としたのは、モル比mが1.001未満になると、高湿度雰囲気下で長時間晒された場合、抵抗値の経時劣化が大きくなり、信頼性を損なうおそれがあるからである。
ただし、nは、0.0001≦n≦0.0020である。
したがって、温度Tと電気抵抗率ρとの特性(以下、「ρ−T特性」という。)を測定し、その極大値と極小値とからPTC桁数を求めた。
2a、2b 外部電極
Claims (4)
- 実質的にPbを含まない非鉛系の半導体セラミックであって、
一般式AmBO3で表されるペロブスカイト型構造を有するBamTiO3系組成物を主成分とし、
AサイトとBサイトのモル比mが、1.001≦m≦1.01となるように配合されると共に、
Aサイトを構成するBaの一部が、Na、Bi、Ca、及び希土類元素で置換され、
前記Aサイトを構成する元素の総モル数を1モルとしたときの前記Caの含有量が、モル比換算で0.05〜0.20であり、
かつ、前記Aサイトを構成する元素の総モル数を1モルとしたときの前記Naと前記Biの含有量の合計が、モル比換算で0.02〜0.20であり、
前記Aサイトを構成する元素の総モル数を1モルとしたときの前記希土類元素の含有量が、モル比換算で0.0005〜0.015であることを特徴とする半導体セラミック。 - 前記モル比mが1.001≦m≦1.004であることを特徴とする請求項1記載の半導体セラミック。
- 前記Caの含有量は、モル比換算で0.125〜0.175であることを特徴とする請求項1又は請求項2記載の半導体セラミック。
- 部品素体の表面に一対の外部電極が形成された正特性サーミスタにおいて、
前記部品素体が、請求項1乃至請求項3のいずれかに記載の半導体セラミックで形成されていることを特徴とする正特性サーミスタ。
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US (1) | US8289125B2 (ja) |
EP (1) | EP2377836B1 (ja) |
JP (1) | JP5327555B2 (ja) |
CN (1) | CN102224119B (ja) |
WO (1) | WO2010067867A1 (ja) |
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DE112011103112T5 (de) * | 2010-09-17 | 2013-06-27 | Murata Mfg. Co., Ltd. | Thermistor mit positivem Temperaturkoeffizienten und Verfahren zur Herstellung eines Thermistors mit positivem Temperaturkoeffizienten |
CN103403814B (zh) * | 2011-02-24 | 2016-08-10 | 株式会社村田制作所 | 正特性热敏电阻元件 |
CN103459350B (zh) * | 2011-03-30 | 2016-01-06 | 株式会社村田制作所 | 半导体陶瓷及正温度系数热敏电阻 |
WO2014017365A1 (ja) * | 2012-07-25 | 2014-01-30 | 株式会社村田製作所 | 積層型ptcサーミスタ素子 |
DE112014001227B4 (de) | 2013-03-11 | 2019-10-10 | Tdk Corporation | PTC-Thermistorkeramikzusammensetzung und PTC-Thermistorelement |
JP6512289B2 (ja) * | 2015-06-04 | 2019-05-15 | 株式会社村田製作所 | セラミック材料および抵抗素子 |
JP2017034140A (ja) * | 2015-08-04 | 2017-02-09 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
JP2017141117A (ja) * | 2016-02-08 | 2017-08-17 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
DE102017101946A1 (de) | 2017-02-01 | 2018-08-02 | Epcos Ag | PTC-Heizer mit verringertem Einschaltstrom |
WO2019204430A1 (en) | 2018-04-17 | 2019-10-24 | Avx Corporation | Varistor for high temperature applications |
CN110366279A (zh) * | 2019-07-16 | 2019-10-22 | 辽宁绿暖科技有限公司 | Ptc陶瓷半导体电加热装置 |
CN110381611A (zh) * | 2019-07-16 | 2019-10-25 | 辽宁绿暖科技有限公司 | Ptc陶瓷半导体热源 |
DE102021213863A1 (de) * | 2021-01-15 | 2022-07-21 | Ngk Insulators, Ltd. | Keramikkörper und verfahren zu dessen herstellung, heizelement, heizeinheit, heizsystem sowie reinigungssytem |
JP2023141203A (ja) * | 2022-03-23 | 2023-10-05 | 日本碍子株式会社 | セラミックス体、ハニカム構造体、セラミックス体の製造方法、及びヒーターエレメント |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275203A (ja) * | 1992-03-25 | 1993-10-22 | Chichibu Cement Co Ltd | 半導体磁器組成物 |
WO2008038538A1 (fr) * | 2006-09-28 | 2008-04-03 | Murata Manufacturing Co., Ltd. | Composition de porcelaine semiconductrice de titanate de baryum et dispositif ptc utilisant celle-ci |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595673A (en) | 1978-12-27 | 1980-07-21 | Matsushita Electric Ind Co Ltd | Semiconductive ceramic material and production thereof |
JPS56169301A (en) | 1980-06-02 | 1981-12-26 | Tohoku Metal Ind Ltd | Method of producing barium titanate semiconductor porcelain |
JP2558489B2 (ja) * | 1988-03-01 | 1996-11-27 | 株式会社クラベ | 正特性半導体磁器 |
US5624707A (en) * | 1991-12-13 | 1997-04-29 | Symetrix Corporation | Method of forming ABO3 films with excess B-site modifiers |
DE4221309A1 (de) * | 1992-06-29 | 1994-01-05 | Abb Research Ltd | Strombegrenzendes Element |
JPH10152372A (ja) | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | チタン酸バリウム系半導体磁器及びその製造方法 |
JP4080576B2 (ja) * | 1997-09-05 | 2008-04-23 | Tdk株式会社 | 正特性半導体磁器の製造方法 |
JP3812268B2 (ja) * | 1999-05-20 | 2006-08-23 | 株式会社村田製作所 | 積層型半導体セラミック素子 |
JP3482394B2 (ja) * | 2000-11-20 | 2003-12-22 | 松下電器産業株式会社 | 圧電磁器組成物 |
JP3554786B2 (ja) * | 2000-12-05 | 2004-08-18 | 株式会社村田製作所 | 半導体セラミック、消磁用正特性サーミスタ、消磁回路、および半導体セラミックの製造方法 |
JP4765258B2 (ja) | 2004-03-12 | 2011-09-07 | 日立金属株式会社 | 半導体磁器組成物 |
JP2006179692A (ja) | 2004-12-22 | 2006-07-06 | Komatsu Electronics Inc | サーミスタの製造方法 |
JP4774511B2 (ja) | 2005-06-24 | 2011-09-14 | 国立大学法人 奈良先端科学技術大学院大学 | ジルコニア粉末、および該ジルコニア粉末を用いて得られるチタン酸バリウム系半導体磁器組成物の製造方法 |
IN2015DN01545A (ja) * | 2005-08-11 | 2015-07-03 | Hitachi Metals Ltd | |
JP2008063188A (ja) | 2006-09-07 | 2008-03-21 | Furukawa Co Ltd | Ptcサーミスタ用配合材料およびptcサーミスタ用半導体磁器組成物 |
CN101013618A (zh) | 2007-01-16 | 2007-08-08 | 杨敬义 | 无铅高居里点ptc热敏电阻材料 |
WO2008152976A1 (ja) | 2007-06-14 | 2008-12-18 | Murata Manufacturing Co., Ltd. | 半導体セラミック材料 |
WO2010067865A1 (ja) * | 2008-12-12 | 2010-06-17 | 株式会社 村田製作所 | 半導体セラミック及び正特性サーミスタ |
CN102245536B (zh) * | 2008-12-12 | 2013-07-31 | 株式会社村田制作所 | 半导体陶瓷以及正特性热敏电阻 |
WO2010067868A1 (ja) * | 2008-12-12 | 2010-06-17 | 株式会社 村田製作所 | 半導体セラミック及び正特性サーミスタ |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275203A (ja) * | 1992-03-25 | 1993-10-22 | Chichibu Cement Co Ltd | 半導体磁器組成物 |
WO2008038538A1 (fr) * | 2006-09-28 | 2008-04-03 | Murata Manufacturing Co., Ltd. | Composition de porcelaine semiconductrice de titanate de baryum et dispositif ptc utilisant celle-ci |
Non-Patent Citations (1)
Title |
---|
JPN6012067529; P. BLANCHART et al.: 'Influence of Calcium Addition on the Microstructure andthe Electrical Properties at Room Temperature' SILICATES INDUSTRIELS VOL.59 (1-2), 1994, PP.47-52 * |
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Publication number | Publication date |
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EP2377836B1 (en) | 2018-07-25 |
CN102224119A (zh) | 2011-10-19 |
US20110215894A1 (en) | 2011-09-08 |
CN102224119B (zh) | 2014-03-26 |
JPWO2010067867A1 (ja) | 2012-05-24 |
EP2377836A1 (en) | 2011-10-19 |
WO2010067867A1 (ja) | 2010-06-17 |
US8289125B2 (en) | 2012-10-16 |
EP2377836A4 (en) | 2014-06-18 |
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