JP5322429B2 - 磁性体と誘電体との複合焼結体およびlc複合電子部品 - Google Patents
磁性体と誘電体との複合焼結体およびlc複合電子部品 Download PDFInfo
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- JP5322429B2 JP5322429B2 JP2007331641A JP2007331641A JP5322429B2 JP 5322429 B2 JP5322429 B2 JP 5322429B2 JP 2007331641 A JP2007331641 A JP 2007331641A JP 2007331641 A JP2007331641 A JP 2007331641A JP 5322429 B2 JP5322429 B2 JP 5322429B2
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Description
方晶Baフェライト結晶を60〜75体積%、前記ペロブスカイト型結晶を15〜30体積%含有するとともに、前記Y型六方晶Baフェライト結晶と前記ペロブスカイト型結晶との合計量100質量%に対し、前記LiをLi 2 O換算で0.24〜1.0質量%含有することを特徴とするものである。
2・・・配線層
3・・・ビアホール導体
4・・・インダクタ部
5・・・コンデンサ部
Claims (5)
- Y型六方晶Baフェライト結晶と、
チタン酸カルシウムまたはチタン酸ストロンチウムのペロブスカイト型結晶と、
Liと、ガラスと、を含有する、磁性体と誘電体との複合焼結体であって、
該複合焼結体中に前記Y型六方晶Baフェライト結晶を60〜75体積%、前記ペロブスカイト型結晶を15〜30体積%含有するとともに、
前記Y型六方晶Baフェライト結晶と前記ペロブスカイト型結晶との合計量100質量%に対し、前記LiをLi 2 O換算で0.24〜1.0質量%含有することを特徴とする磁性体と誘電体との複合焼結体。 - 1GHzにおける比透磁率が1.4以上であることを特徴とする請求項1に記載の磁性体と誘電体との複合焼結体。
- 前記ガラスがSi、Ca、BaおよびLiを含むとともに実質的にAlおよびBを含まないことを特徴とする請求項1または請求項2に記載の磁性体と誘電体との複合焼結体。
- BaAl2Si2O8結晶、BaB2O4結晶、ZnAl2O4結晶およびCaAl
2Si2O8結晶を実質的に含まないことを特徴とする請求項1乃至請求項3のいずれかに記載の磁性体と誘電体との複合焼結体。 - 請求項1乃至請求項4のいずれかに記載の磁性体と誘電体との複合焼結体からなる絶縁基体の内部または表面にコンデンサ回路およびインダクタ回路が形成されていることを特徴とするLC複合電子部品。
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JP2007331641A JP5322429B2 (ja) | 2006-12-25 | 2007-12-25 | 磁性体と誘電体との複合焼結体およびlc複合電子部品 |
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JP2007331641A JP5322429B2 (ja) | 2006-12-25 | 2007-12-25 | 磁性体と誘電体との複合焼結体およびlc複合電子部品 |
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JP5386496B2 (ja) * | 2008-09-30 | 2014-01-15 | 双信電機株式会社 | 複合電子部品 |
US20100157492A1 (en) * | 2008-12-23 | 2010-06-24 | General Electric Company | Electronic device and associated method |
JP5570205B2 (ja) * | 2009-03-26 | 2014-08-13 | 京セラ株式会社 | 磁性焼結体、磁性体と誘電体との複合焼結体、およびそれらの製造方法、ならびにそれらを用いた電子部品 |
CN103080010B (zh) | 2010-08-31 | 2016-05-04 | 户田工业株式会社 | 钛酸锂颗粒粉末及其制造方法、含Mg钛酸锂颗粒粉末及其制造方法、非水电解质二次电池用负极活性物质颗粒粉末以及非水电解质二次电池 |
JP6079951B2 (ja) * | 2012-07-06 | 2017-02-15 | 株式会社村田製作所 | フェライト系磁性体、その製造方法および該フェライト系磁性体を用いた電子部品 |
JP6414376B2 (ja) * | 2013-02-25 | 2018-10-31 | 株式会社村田製作所 | セラミック電子部品 |
JP6318537B2 (ja) * | 2013-10-18 | 2018-05-09 | 株式会社村田製作所 | インダクタの製造方法及びインダクタ |
US10027035B2 (en) | 2014-09-30 | 2018-07-17 | Skyworks Solutions, Inc. | Modified Z-type hexagonal ferrite materials with enhanced resonant frequency |
US10032547B2 (en) | 2014-10-24 | 2018-07-24 | Skyworks Solutions, Inc. | Increased resonant frequency alkali-doped Y-phase hexagonal ferrites |
CN106242545B (zh) * | 2016-07-13 | 2019-01-18 | 深圳顺络电子股份有限公司 | 一种非磁性铁氧体、叠层电子器件及其制备方法 |
CN112851323B (zh) * | 2021-01-20 | 2022-01-14 | 新化嘉恒电子陶瓷有限责任公司 | 一种具有高磁导率的微波介电陶瓷材料及其制备方法 |
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JPH01291406A (ja) * | 1988-05-18 | 1989-11-24 | Mitsubishi Mining & Cement Co Ltd | 高誘電率磁性材料およびその製造方法 |
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US20080149882A1 (en) | 2008-06-26 |
KR20080059528A (ko) | 2008-06-30 |
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