JP5386496B2 - 複合電子部品 - Google Patents
複合電子部品 Download PDFInfo
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- JP5386496B2 JP5386496B2 JP2010531938A JP2010531938A JP5386496B2 JP 5386496 B2 JP5386496 B2 JP 5386496B2 JP 2010531938 A JP2010531938 A JP 2010531938A JP 2010531938 A JP2010531938 A JP 2010531938A JP 5386496 B2 JP5386496 B2 JP 5386496B2
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- 239000002131 composite material Substances 0.000 title claims description 18
- 239000000919 ceramic Substances 0.000 claims description 28
- 229910000859 α-Fe Inorganic materials 0.000 claims description 25
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 22
- 229910002113 barium titanate Inorganic materials 0.000 claims description 19
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000696 magnetic material Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 16
- 238000005245 sintering Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 10
- 239000011812 mixed powder Substances 0.000 description 10
- 230000035699 permeability Effects 0.000 description 10
- 238000005452 bending Methods 0.000 description 8
- 229910052810 boron oxide Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000032798 delamination Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910052749 magnesium Chemical group 0.000 description 1
- 239000011777 magnesium Chemical group 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical group [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B2237/346—Titania or titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
- H03H7/425—Balance-balance networks
- H03H7/427—Common-mode filters
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- Ceramic Engineering (AREA)
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Magnetic Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Coils Or Transformers For Communication (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Filters And Equalizers (AREA)
Description
磁性体が、46〜48mol% のFe2O3、0.1〜36mol%のZnO、10〜14mol% のCuOおよび残部がNiOからなるフェライト組成を100重量部としたとき、0.8重量部以下のBi2O3、0.9重量部以下のTiO2、および0.52重量部以下のBaOを副成分として含有しており、前記誘電体の比誘電率が1000以上であり、誘電体は、チタン酸バリウム系誘電体100重量部に対して、0.5重量部以上、4.0重量部以下のCuOと4.0重量部以上、9.0重量部以下のBi2O3が添加されていることを特徴とする。
磁性体が、46〜48mol% のFe2O3、0.1〜36mol%のZnO、10〜14mol% のCuOおよび残部がNiOからなるフェライトであり、誘電体の比誘電率が1000以上であり、誘電体は、チタン酸バリウム系誘電体100重量部に対して、0.5重量部以上、4.0重量部以下のCuOと4.0重量部以上、9.0重量部以下のBi2O3が添加されている。
本発明によって、高透磁率のNiCuZnフェライトと高誘電率の誘電体とを低温焼結で強固に一体化した電子部品を提供できるので、これまで利用されてこなった種々の製品、例えばノイズ対策部品の小型化および省スペース化を実現することができる。
本発明で用いる誘電体は、チタン酸バリウム系誘電体100重量部に対して、0.5重量部以上、4.0重量部以下のCuOと4.0重量部以上、9.0重量部以下のBi2O3が添加されているものである。誘電体の誘電率は、誘電体コンデンサのように高い誘電率を必要とする用途においては、誘電率を1000 以上とすることが好ましい。また、誘電体の絶縁抵抗は、単体として1.0×1010Ω以上であることが好ましい。
(1) CuOおよびBi2O3を別々の酸化物の形で添加する。
(2) CuOとBi2O3との複合酸化物を添加する。
(3) (1)の複数種類の酸化物と、(2)の複合酸化物とを両方とも添加する。
(2)(3)の複合酸化物は、仮焼によって生成させることができる。また、複合酸化物としては、CuBi2O4を例示できる。
本発明で用いる磁性体は、46〜48mol% のFe2O3、0.1〜36mol%のZnO、10〜14mol% のCuOおよび残部がNiOからなるフェライト組成を有している。
本発明の部品の共焼結は、900〜1000℃で行うことが好ましい。共焼結温度が900℃未満では、焼結が困難である。また焼結温度を1000℃以下とすることによって、広範囲な用途展開が可能となり、産業上の利点が大きい。焼結温度は980℃以下が更に好ましい。また、導体としてAg、Ag合金などを使うときは、焼結温度を950℃以下とすることが好ましい。
本発明では、図1(a)に示すように、誘電体1と磁性体2とを直接接触させた状態で接合してもよい。しかし、誘電体と磁性体2との間に中間層を介在させた状態で一体化することも可能である。即ち、図1(b)に示すように、誘電体1と磁性体2との間に中間層3を設けることができる。更に、図1(c)、(d)に示すように、磁性体の両側および誘電体の両側にも中間層3を設けることができる。
中間層の材質としては、BaO-TiO2-ZnO材100重量部に対して、8重量部以下のCuOが添加されることが好ましい。特に好ましくは、中間層の材質が、xBaO−yTiO2−zZnO(x、y、zは、それぞれ、モル比率を示し、x+y+z=1;0.09≦x≦0.20;0.49≦y≦0.61;0.19≦z≦0.42)の組成を有する磁器である。この範囲内の組成によって、共焼結時に、誘電体および磁性体との接合性が特に良好となる。
本発明において、前記した各金属酸化物成分の比率は、原料混合物における各金属の酸化物への換算値である。原料混合物における各金属の酸化物への換算値は、各金属原料の混合比率によって定まる。本発明においては、各金属原料の混合比率を精密天秤によって秤量し、この秤量値に基づいて前記換算値を算出する。
本発明の複合電子部品とは、フェライトの高透磁率と誘電体の高誘電率とを利用するような電子部品であれば限定されない。この電子部品の種類としては、LとCの受動素子を備えたフィルタ、ノイズ対策部品などを例示できる。
(誘電体の原料の作製)
所望の組成となるように各酸化物粉末を秤量し、湿式混合して、各混合粉末を得る。その後、混合粉末を1000〜1100℃で仮焼した。得られた仮焼物に対して所定量のCuOおよびBi2O3を添加し、粉砕して高誘電体の原料粉末を得た。
所望の組成となるように各酸化物粉末を秤量し、湿式混合して混合粉末を得る。その後、740〜840℃の範囲で仮焼する。その後粉砕してセラミック原料粉末を得た。
調整した各原料粉末に有機バインダ、可塑剤、分散剤および有機溶剤を加え、ボールミルにて混合し、スラリーを得た。このスラリーを用いてドクターブレード装置によって厚さ0.02〜0.1mmのグリーンシートを成形した。
磁性体セラミックグリーンシート(40μm)と高誘電率セラミックグリーンシート(40μm)を1:1になるように積層し、焼成して、約3mm×30mm×2mmの試験片を取り出して3点曲げ試験を行った。接合性は同様の構造物に対し、鏡面研磨を行って接合界面部のクラック、空隙、相互拡散を電子顕微鏡で観察した。
磁性体セラミックグリーンシート(40μm)と高誘電率セラミックグリーンシート(40μm)を1:1になるように積層し、焼成して、あらかじめ高誘電率層の一部が容量層となるようにスクリーン印刷によって電極パターン(電極の重なりの面積は焼成後2mm2)を形成し、端子電極形成する。その後端子電極を用いて容量を測定した。
磁性体セラミックグリーンシート(40μm)と高誘電率セラミックグリーンシート(40μm)をそれぞれ焼成後、約10mm×10mm×1.5mmとなる様に焼結体を作成し、対抗電極を形成し、絶縁抵抗計にて50V印加による測定を行った。
磁性体および高誘電体の焼結体を10000倍にて観察し、空孔の占有率を計算し、判定した。
これらの測定結果を表1、2、3に示す。
実験Aと同様にして積層体を製造した。ただし、誘電体層と磁性体層との間に,次のようにして中間層を形成した。
まず、B2O3-SiO2-Al2O3-BaOの組成からなるガラスを作製した。各ガラス成分を構成する各酸化物を秤量し、乾式混合によって混合物を得た。その後、白金ルツボ中で溶融させ、溶融物を水中で急速冷却して塊状のガラスを得た。このガラスを湿式粉砕して、ガラス粉末を得た。
得られた仮焼物と前記ガラス、必要に応じて所定量のCuOを添加し、粉砕して低誘電率セラミック原料粉末を得た。表4、5に記載の中間層組成の誘電率は、すべて20〜30、Q値(3GHz)は3000以上である。
(誘電体の原料の作製)
表6に示す所望の組成となるように各酸化物粉末を秤量し、湿式混合して、各混合粉末を得る。その後、混合粉末を1000〜1100℃で仮焼した。得られた仮焼物に対して所定量のCuOおよびBi2O3を添加し、粉砕して高誘電体の原料粉末を得た。
表6に示す所望の組成となるように各酸化物粉末を秤量し、湿式混合して混合粉末を得る。その後、740〜840℃の範囲で仮焼する。その後粉砕してセラミック原料粉末を得た。
得られた各原料を使用し、実験Aに記載の方法によって、テープ成形を行い、接合性、抗折強度、比誘電率、絶縁抵抗、焼結性を確認した。
(透磁率測定試料の作製)
磁性体セラミックグリーンシート(40μm)を、焼成後約18mm×18mm×1.6mmとなる様に焼結体を作製し、外形16mm×内径10mmのリング状に切り出し加工し、トロイダルコアを作成する。そして、得られたトロイダルコアにコード(巻線)を17回だけ巻きつけて試料とした。
試料に直流電流を流したときの透磁率の変化を測定し、透磁率と直流電流の関係をグラフにする。得られたグラフを用いて、直流電流0(mA)時の初期透磁率μiが10%低下したときの磁界の強さ、すなわち、直流重畳特性を計算にて求めた。
計算によって求めた直流重畳特性に初期透磁率を乗算して直流重畳係数を求めた。結果を表7に示す。
Claims (5)
磁性体が、46〜48mol% のFe2O3、0.1〜36mol%のZnO、10〜14mol% のCuOおよび残部がNiOからなるフェライト組成を100重量部としたとき、0.8重量部以下のBi2O3、0.9重量部以下のTiO2、および0.52重量部以下のBaOを副成分として含有しており、前記誘電体の比誘電率が1000以上であり、前記誘電体は、チタン酸バリウム系誘電体100重量部に対して、0.5重量部以上、4.0重量部以下のCuOと4.0重量部以上、9.0重量部以下のBi2O3が添加されていることを特徴とする、複合電子部品。
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US20110200839A1 (en) * | 2010-02-17 | 2011-08-18 | Melania Marinescu | Rare Earth Laminated, Composite Magnets With Increased Electrical Resistivity |
CN102584216B (zh) * | 2012-01-13 | 2014-08-27 | 深圳顺络电子股份有限公司 | 一种高介电常数材料在制备介电磁性复合器件中的用途 |
KR101558075B1 (ko) * | 2014-01-27 | 2015-10-06 | 삼성전기주식회사 | 복합 전자부품 및 그 실장 기판 |
KR102161540B1 (ko) * | 2019-06-20 | 2020-10-05 | 임욱 | 복합 재료를 이용한 성능 강화형 하이브리드 인덕터 및 이를 갖는 전자부품 |
CN111943661A (zh) * | 2020-07-28 | 2020-11-17 | 深圳振华富电子有限公司 | 电感铁氧体材料、电感铁氧体磁件及其制备方法和应用 |
CN115947594B (zh) * | 2023-02-14 | 2023-07-25 | 肇庆清控微电科技有限公司 | 一种高频段铁氧体材料及其制备方法 |
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