CN102165543A - 复合电子部件 - Google Patents
复合电子部件 Download PDFInfo
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- CN102165543A CN102165543A CN2009801385155A CN200980138515A CN102165543A CN 102165543 A CN102165543 A CN 102165543A CN 2009801385155 A CN2009801385155 A CN 2009801385155A CN 200980138515 A CN200980138515 A CN 200980138515A CN 102165543 A CN102165543 A CN 102165543A
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- magnetic
- electronic device
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- 239000002131 composite material Substances 0.000 title abstract description 5
- 230000005291 magnetic effect Effects 0.000 claims abstract description 54
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims description 23
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical class [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 20
- 239000004615 ingredient Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 abstract description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 239000000203 mixture Substances 0.000 description 22
- 239000000919 ceramic Substances 0.000 description 19
- 239000000843 powder Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 12
- 239000011812 mixed powder Substances 0.000 description 10
- 230000035699 permeability Effects 0.000 description 10
- 238000005303 weighing Methods 0.000 description 9
- 230000004523 agglutinating effect Effects 0.000 description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910052810 boron oxide Inorganic materials 0.000 description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
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Abstract
本发明提供一种复合电子部件,其包含在1000℃以下的温度下共烧结而成的磁性体2和电介质1。磁性体2是由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体;电介质1的相对介电常数为1000以上;电介质为,对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。
Description
技术领域
本发明涉及复合电子部件。
背景技术
近年,正试图通过将安装在陶瓷基板表面的电容器、电感器等无源部件内藏在陶瓷多层基板中,来实现电子设备的小型化和高密度化。制作这种陶瓷多层基板时,通过刮刀法将电介质瓷器(porcelain)组合物和有机溶剂的混合浆料制成生片(green sheet),并使其干燥后,将配线导体印刷到该生片的顶面。然后,将与上述同样的电解质瓷器组合物的生片重叠,作为叠层物,同时烧成。
为了进行高速、高性能的信号处理,这种陶瓷多层基板使用比电阻小的Ag或Cu作为配线导体。因此,正在开发能够在比Ag的熔点962℃和Cu的熔点1084℃低的温度下,与它们同时烧成的各种陶瓷材料。
例如,日本特开2001-10820、日本特开2003-272912中记载了Fe2O3、ZnO、CuO和NiO系的铁氧体。
现在,具有Ag导体的磁性体和电介质接合而成的电子部件中,所述电介质的介电常数(誘電率)几乎都为100以下。另外,具有介电常数为100以上的电介质部的磁性体/电介质的复合电子部件中,电介质的主成分中不含Pb的电介质的介电常数刚刚超过100(参照日本特开2003-37022、WO2006/085625)。
另外,本申请人在日本特开2007-290940中公开了,通过对钛酸钡添加规定量的CuO和Bi2O3,从而不含铅而能够低温烧成且具有高介电常数的电介质组合物。
另外,叠层电感器等使用铁氧体材料作为芯部的线圈部件,随着施加直流电压,电感降低。因此,使用重叠直流电流的电子部件中,电感的降低就成为决定额定电流的主要因素。由此,作为线圈部件的芯部所使用的铁氧体材料,为了使额定电流上升,最好是具有优异的直流重叠特性的材料。
例如在日本特开2006-151742号中,通过在NiCuZn系铁氧体材料中添加氧化铋和氧化钛,来提高直流重叠特性。
另外,本申请人在日本特愿2009-82211号中公开了,在NiCuZn系铁氧体材料中添加规定量的氧化铋、氧化钛、氧化钡,来提高直流重叠特性。
发明内容
使用了Ag导体的铁氧体和LTCC产品中,通过将高容量的无源部件组合,从而可以应对新的需要。例如,为了实现抗电源体系中产生的低频噪音的部件的小型化和小空间化,具有更高容量的磁性体/电介质的复合电子部件是必要的。即,需要将构成电容器(condenser)或电容器(capacitor)等的高介电常数陶瓷层和构成线圈或电感器等的铁氧体层层叠,并一体化。另外,必须能够将高介电常数陶瓷层和铁氧体层在1000℃以下的低温范围内致密烧成,并且必须无分层、无裂缝地将两者接合。
而且,在高介电常数陶瓷层和铁氧体层之间,在共烧结时产生成分扩散,结果会有介电特性恶化的倾向。解决这些问题的复合电子部件还是未知的。
另外,本申请人在日本特愿2007-253528中公开了,对能够低温烧成且介电损失小的高介电常数钛酸钡系电介质和低介电常数陶瓷层,通过共烧结,无分层、无裂缝地进行接合。
但是,关于对能够低温烧成且介电损失小的高介电常数钛酸钡系电介质和铁氧体,通过共烧结,无分层、无裂缝地进行接合的内容,还没有公开。
本发明的课题是:对于钛酸钡系的高介电常数体和铁氧体,通过低温烧成,在抑制分层、裂缝的同时进行接合。
本发明为一种复合电子部件,其包含在1000℃以下的温度下共烧结而成的磁性体和电介质,磁性体是由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体,电介质的相对介电常数为1000以上,电介质为相对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。另外,本发明为一种复合电子部件,其包含在1000℃以下的温度下共烧结而成的磁性体和电介质,磁性体在由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体组成为100重量份时,还含有作为副成分的0.8重量份以下的Bi2O3、0.9重量份以下的TiO2和0.52重量份以下的BaO;所述电介质的相对介电常数为1000以上;电介质为相对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。本发明人通过改良相对介电常数为1000以上的BaTiO3系电介质材料和高导磁率的NiCuZn铁氧体各自的组成,从而能够在1000℃以下的烧成温度下将不同种材料接合。由此,对于高介电常数体和铁氧体,通过低温烧成,可以在抑制分层、裂缝的同时进行接合。
通过本发明,可以提供通过低温烧结将高导磁率的NiCuZn铁氧体和高介电常数的电介质牢固地一体化而成的电子部件,因此可以实现至今未使用的各种产品、例如抗噪音部件的小型化和小空间化。
附图说明
图1(a)表示电介质1和磁性体2的共烧结体,图1(b)、图1(c)和图1(d)分别表示电介质1、中间层3和磁性体2的共烧结体。
图2是表示抗噪音部件的等效电路的例子的电路图。
具体实施方式
电介质
本发明中使用的电介质是:相对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。关于电介质的介电常数,在电介质电容器这样需要高介电常数的用途中,优选使介电常数为1000以上。另外,关于电介质的绝缘电阻,作为个体,优选为1.0×1010Ω以上。
钛酸钡系电介质,是指以钛酸钡为主成分的电介质。具体来讲,在原料阶段,可以是钛酸钡的预烧物,或者也可以是烧结后烧成钛酸钡的氧化钛和氧化钡的混合物。另外,将钛酸钡系电介质全体设为100摩尔%时,可以是100摩尔%的全体由钛酸钡构成。或者,在电介质的钡部位中,30摩尔%以下可以被锶、钙、镁替换。另外,电介质的钛部位中,30摩尔%以下可以被锆替换。
本发明中使用的电介质中,相对于钛酸钡系电介质,添加CuO和Bi2O3。由此,可以提高与特定的铁氧体磁性体的接合强度。
添加的方法例如如下。
(1)将CuO和Bi2O3各自以氧化物的形态添加。
(2)添加CuO和Bi2O3的复合氧化物。
(3)添加(1)的多种氧化物和(2)的复合物氧化物双方。
(2)、(3)的复合氧化物可以通过预烧来生成。另外,作为复合氧化物,可以例示出CuBi2O4。
从本发明的观点出发,相对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。
通过使相对于钛酸钡系电介质100重量份的CuO的添加量为0.5重量份以上、Bi2O3的添加量为4.0重量份以上,从而能够提高低温下的烧结性和与铁氧体的接合性。
另外,通过使相对于钛酸钡系电介质100重量份的CuO的添加量为4.0重量份以下、Bi2O3的添加量为9.0重量份以下,从而能够提高绝缘电阻和与铁氧体的接合性。
优选本发明的钛酸钡系电介质中实质上不含有Pb的氧化物。但是,微量的不可避免的杂质除外。
本发明的电介质中实质上不含有玻璃成分。另外,作为各金属成分的原料,可以例示出各金属的氧化物、硝酸盐、碳酸盐、硫酸盐。
磁性体
本发明中使用的磁性体具有由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体组成。
这里,具有由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体组成,意味着磁性体铁氧体的主成分由这四种成分构成。这四种成分的合计量为100摩尔%。
在优选的实施方式中,磁性体由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成。
另外,磁性体的绝缘电阻,作为个体,优选为1.0×1010Ω。
通过使Fe2O3的含量在48摩尔%以下,从而绝缘电阻提高。通过使Fe2O3的含量在46摩尔%以上,从而导磁率提高。从这个观点考虑,更优选Fe2O3的含量为47摩尔%以上。
通过使ZnO的含量在0.1摩尔%以上,低温下的烧结性提高。从该观点考虑,ZnO的含量更优选为4.0摩尔%以上,进一步优选为15摩尔%以上。另外,通过使ZnO的含量在36摩尔%以下,可以确保导磁率。从该观点考虑,ZnO的含量更优选为30摩尔%以下。
通过使CuO的含量在10摩尔%以上,低温下的烧结性提高。从该观点考虑,CuO的含量更优选为11摩尔%以上。另外,通过使CuO的含量在14摩尔%以下,可以防止过烧结。从该观点考虑,CuO的含量更优选为12摩尔%以下。
另外,相对于上述铁氧体组成100重量份,还可以含有0.8重量份以下的Bi2O3、0.9重量份以下的TiO2和0.52重量份以下的BaO作为副成分。由此,磁性体的直流重叠特性提高。
从该观点考虑,Bi2O3的量更优选为0.2重量份以上且更优选为0.7重量份以下。
另外,TiO2的量更优选为0.4重量份以上且更优选为0.6重量份以下。
另外,BaO的量更优选为0.2重量份以上且更优选为0.4重量份以下。
共烧结温度
本发明的部件的共烧结,优选在900~1000℃下进行。共烧结温度低于900℃,则难以烧结。另外,通过使烧结温度为1000℃以下,从而能够扩展到很大范围的用途,在工业上有很大优点。烧结温度更优选为980℃以下。另外,使用Ag、Ag合金等作为导体时,优选使烧结温度为950℃以下。
磁性体和电介质的一体化的形态
本发明中,如图1(a)所示,也可以在使电介质1和磁性体2直接接触的状态下进行接合。但是,也可以在电介质和磁性体2之间隔着中间层的状态下进行一体化。即,如图1(b)所示,可以在电介质1和磁性体2之间设置中间层3。进而,如图1(c)、(d)所示,可以在磁性体的两侧和电介质的两侧设置中间层3。
中间层的材质
作为中间层的材质,优选为在BaO-TiO2-ZnO材料100重量份中添加8重量份以下的CuO。特别优选中间层的材质是具有xBaO-yTiO2-zZnO(x、y、z各自表示摩尔比,x+y+z=1;0.09≤x≤0.20;0.49≤y≤0.61;0.19≤z≤0.42)的组成的瓷器。通过该范围内的组成,在共烧结时,电介质和磁性体的接合性特别好。
所述中间层用瓷器中的BaO的比例x更优选为0.11以上,并且更优选为0.15以下。另外,所述瓷器中的TiO2的比例y更优选为0.5以上,并且更优选为0.6以下。另外,所述瓷器中的ZnO的比例z更优选为0.3以上,并且更优选为0.4以下。
通过在所述瓷器100重量份中添加1.0重量份以上、5.0重量份以下的含氧化硼的玻璃成分,从而能够有效地降低中间层的烧结温度。
该含氧化硼的玻璃成分的意思是至少含有氧化硼的玻璃成分。该玻璃成分可以仅是氧化硼,但优选含有氧化硼以外的金属氧化物。作为氧化硼以外的金属氧化物,可以例示出BaO、Al2O3、ZnO、SiO2和碱金属氧化物。
制造
本发明中,上述的各金属氧化物成分的比例是换算为原料混合物中的各金属的氧化物的值。换算为原料混合物中的各金属的值,是根据各金属原料的混合比例来确定的。本发明中,用精密天平精密称量各金属原料的混合比例,基于该称量值算出所述换算值。
本发明的电子部件优选具有由选自Ag、Cu和Ag-Pd合金组成的组中的材质形成的导体图案。
另外,本发明的电子部件优选具有一对电极层,在这一对电极层间配置有所述高介电常数陶瓷层,通过该一对电极层导出规定的静电容量。
制造本发明的电子部件时,优选以达到希望的组成的方式来称量各氧化物粉末,进行湿式混合,得到电介质、磁性体的各混合粉末。之后,在900~1200℃的范围(优选1000~1100℃)对电介质的混合粉末进行预烧,在740~840℃对磁性体的混合粉末进行预烧。粉碎预烧体,得到各陶瓷粉末。优选将各陶瓷粉末与有机粘合剂、增塑剂、分散剂和有机溶剂混合,通过刮刀法将片成型,将其层叠而得到叠层体。将该叠层体在900~1000℃进行共烧结,得到电子部件。
复合电子部件的用途
就本发明的复合电子部件而言,只要是利用铁氧体的高导磁率和电介质的高介电常数的电子部件,则没有限定。作为该电子部件的种类,可以例示出具有L和C无源元件的过滤器、抗噪音部件等。
抗噪音部件是指消除噪音的电子部件,这种噪音是从电子设备泄漏出的电磁杂音的放射、传播的,并妨碍其他设备。图2表示抗噪音部件的等效电路的例子。
实施例
实验A
电介质的原料的制作
按照希望的组成来称量各氧化物粉末,进行湿式混合,得到各混合粉末。之后,在1000~1100℃对混合粉末进行预烧。对于得到的预烧物,添加规定量的CuO和Bi2O3,粉碎,得到高电介质的原料粉末。
磁性体的原料的制备
按照希望的组成来称量各氧化物粉末,进行湿式混合,得到混合粉末。之后,在740~840℃的范围进行预烧。之后,进行粉碎,得到陶瓷原料粉末。
胶带成型
向制备好的各原料粉末中加入有机粘合剂、增塑剂、分散剂和有机溶剂,用球磨进行混合,得到浆料。使用该浆料,用刮刀装置成型厚0.02~0.1mm的生片。
接合性、抗折强度试验
将磁性体陶瓷生片(40μm)和高介电常数陶瓷生片(40μm)按1∶1层叠,烧成,取出约3mm×30mm×2mm的试验片,进行3点弯曲试验。关于接合性,对于相同的结构物,进行镜面研磨,用电子显微镜观察接合界面的裂缝、空隙、相互扩散。
相对介电常数的测定
将磁性体陶瓷生片(40μm)和高介电常数陶瓷生片(40μm)按1∶1层叠,烧成,预先通过丝网印刷形成电极图案(电极的重叠面积在烧成后为2mm2)以使高介电常数层的一部分成为容量层,形成端子电极。之后,用端子电极测定容量。
绝缘电阻
将磁性体陶瓷生片(40μm)和高介电常数陶瓷生片(40μm)分别烧成后,制作约10mm×10mm×1.5m的烧结体,形成对抗电极,用绝缘电阻计进行施加50V电压时的测定。
烧结性确认
用10000倍观察磁性体和高电介质的烧结体,计算空孔的占有率,进行判定。
这些测定结果示于表1、2、3。
表1
表1中,对电介质的CuO的比例和Bi2O3的比例进行了各种改变。结果,试样4~8、10中,磁性体、电介质的烧结性良好,共烧结品的抗折强度高。试样1、2中,电介质中的CuO的比例低,Bi2O3的比例也低,抗折强度低。试样3中,电介质中的Bi2O3的比例低,抗折强度低。试样9中,Bi2O3的比例高,抗折强度低。
表2
表2中,对电介质的CuO的比例和Bi2O3的比例进行了各种改变。结果,试样11~15、18中,磁性体、电介质的烧结性良好,共烧结品的抗折强度高。试样16、17中,电介质中的CuO的比例高,电介质的绝缘电阻低。试样19中,电介质中的Bi2O3的比例高,接合性差。
表3
表3中,对磁性体的各成分的比例进行了各种改变。结果,试样20~23中,Fe2O3的比例高,磁性体的绝缘电阻低。试样32中,Fe2O3的比例低,磁性体的绝缘电阻低。试样34中,不添加ZnO,磁性体的烧结性差。
实验B
按照与实验A相同的方式制造层叠体。但是,在电介质层和磁性体层之间,如下形成中间层。
按照希望的组成来称量各氧化物粉末,进行湿式混合,得到低介电常数瓷器的各混合粉末。之后,在1050~1300℃对低介电常数材料进行预烧。之后,进行粉碎,得到各陶瓷原料粉末。
制作玻璃
首先,制作由B2O3-SiO2-Al2O3-BaO的组成形成的玻璃。称量构成各玻璃成分的各氧化物,通过干式混合得到混合物。之后,在白金坩埚中使其熔融,在水中将熔融物迅速冷却,得到块状的玻璃。将该玻璃湿式粉碎,得到玻璃粉末。
中间层材质的制备
将得到的预烧物、上述玻璃、根据需要添加的规定量的CuO粉碎,得到低介电常数陶瓷原料粉末。表4、5中记载的中间层组成的介电常数均为20~30,Q值(3GHz)为3000以上。
制作上述的层叠生片时,是中间层用生片介于磁性体用生片和电介质用生片之间,得到层叠体。使中间层的厚度为40μm。在表4、5所示的各温度下烧结。关于得到的烧结体,进行上述那样的试验,试验结果示于表4、表5。
表4
表5
表4中,对中间层的有无进行了各种变化。结果,将试样13和35与试样14和36分别进行比较时,有中间层的试样35、36的抗折强度更高。
表5中,对中间层中的各成分的比例进行了各种变化。结果,试样40中,中间层中的CuO的比例高,接合性不好。试样41中,电介质中的Bi2O3的比例高,接合性差。此外的试样37~39、42~45中,得到了良好的结果。
实验C
电介质的原料的制作
按照表6所示的希望的组成来称量各氧化物粉末,进行湿式混合,得到各混合粉末。之后,在1000~1100℃对混合粉末进行预烧。对于得到的预烧物,添加规定量的CuO和Bi2O3,粉碎,得到高电介质的原料粉末。
磁性体的原料的制备
按照表6所示的希望的组成来称量各氧化物粉末,进行湿式混合,得到混合粉末。之后,在740~840℃的范围进行预烧。之后,进行粉碎,得到陶瓷原料粉末。
试验
使用得到的各原料,通过实验A中记载的方法,进行胶带成型,确认接合性、抗折强度、相对介电常数、绝缘电阻、烧结性。
进而,进行以下试验。
导磁率测定试样的制作
将磁性体陶瓷生片(40μm)制作烧成后约18mm×18mm×1.6mm的烧结体,切出加工为外径16mm×内径10mm的环状,制成环形芯。将线(卷线)在得到的环形芯上缠绕17圈,作为试样。
直流重叠特性的测定
测定试样中流过直流电流时的导磁率的变化,将导磁率和直流电流的关系制成曲线图。使用得到的曲线图,通过计算求出直流电流0(mA)时的初期导磁率μi降低10%时的磁场的强度,即直流重叠特性。
直流重叠系数的获得
将初期导磁率乘以通过计算求出的直流重叠特性,求出直流重叠系数。结果示于表7。
表6
表7
表6、7中,对磁性体副成分的添加量进行各种改变。结果,添加了副成分的试样A1~A9均比试样27的直流重叠系数高(43000以上),得到了良好的结果。
以上对本发明的特定的实施方式进行了说明,但本发明不限于这些特定的实施方式,只要不脱离权利要求的范围,可以进行各种变更和改变。
Claims (10)
1.一种复合电子部件,其包含在1000℃以下的温度下共烧结而成的磁性体和电介质,
所述磁性体是由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体;
所述电介质的相对介电常数为1000以上;
所述电介质为,对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。
2.根据权利要求1记载的复合电子部件,其中,所述磁性体和所述电介质的各自的个体的绝缘电阻为1.0×1010Ω以上。
3.根据权利要求1或2记载的复合电子部件,其中,在所述磁性体和电介质的界面,接合有相对于BaO-TiO2-ZnO材料100重量份添加了8重量份以下的CuO的瓷器的中间层。
4.根据权利要求1~3中任一项记载的复合电子部件,其中,在所述电介质和所述磁性体上设置有由Ag、Cu和Ag-Pd合金的至少一种形成的导体图案。
5.根据权利要求1~4中任一项记载的复合电子部件,其为抗噪音部件。
6.一种复合电子部件,其包含在1000℃以下的温度下共烧结而成的磁性体和电介质,
所述磁性体含有100重量份的由46~48摩尔%的Fe2O3、0.1~36摩尔%的ZnO、10~14摩尔%的CuO和余量的NiO构成的铁氧体组成,以及作为副成分的0.8重量份以下的Bi2O3、0.9重量份以下的TiO2和0.52重量份以下的BaO;
所述电介质的相对介电常数为1000以上;
所述电介质为,相对于钛酸钡系电介质100重量份,添加0.5重量份以上4.0重量份以下的CuO和4.0重量份以上9.0重量份以下的Bi2O3。
7.根据权利要求6记载的复合电子部件,其中,所述磁性体和所述电介质的各自的个体的绝缘电阻为1.0×1010Ω以上。
8.根据权利要求6或7记载的复合电子部件,其中,在所述磁性体和电介质的界面,接合有相对于BaO-TiO2-ZnO材料100重量份添加了8重量份以下的CuO的瓷器的中间层。
9.根据权利要求6~8中任一项记载的复合电子部件,其中,在所述电介质和所述磁性体上设置有由Ag、Cu和Ag-Pd合金的至少一种形成的导体图案。
10.根据权利要求6~9中任一项记载的复合电子部件,其为抗噪音部件。
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Application publication date: 20110824 |