JP5311666B2 - 固体撮像素子の製造方法 - Google Patents

固体撮像素子の製造方法 Download PDF

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Publication number
JP5311666B2
JP5311666B2 JP2009244179A JP2009244179A JP5311666B2 JP 5311666 B2 JP5311666 B2 JP 5311666B2 JP 2009244179 A JP2009244179 A JP 2009244179A JP 2009244179 A JP2009244179 A JP 2009244179A JP 5311666 B2 JP5311666 B2 JP 5311666B2
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Japan
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conductivity type
forming
region
semiconductor layer
planar semiconductor
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Expired - Fee Related
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JP2009244179A
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English (en)
Japanese (ja)
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JP2010103540A (ja
JP2010103540A5 (enExample
JP2010103540A6 (ja
Inventor
富士雄 舛岡
広記 中村
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Unisantis Electronics Singapore Pte Ltd
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Unisantis Electronics Singapore Pte Ltd
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Priority to JP2009244179A priority Critical patent/JP5311666B2/ja
Publication of JP2010103540A publication Critical patent/JP2010103540A/ja
Publication of JP2010103540A6 publication Critical patent/JP2010103540A6/ja
Publication of JP2010103540A5 publication Critical patent/JP2010103540A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009244179A 2008-10-24 2009-10-23 固体撮像素子の製造方法 Expired - Fee Related JP5311666B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009244179A JP5311666B2 (ja) 2008-10-24 2009-10-23 固体撮像素子の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
WOPCT/JP2008/069321 2008-10-24
WOPCT/JP2008/69321 2008-10-24
PCT/JP2008/069321 WO2010046994A1 (ja) 2008-10-24 2008-10-24 固体撮像素子、固体撮像装置及びその製造方法
JP2009244179A JP5311666B2 (ja) 2008-10-24 2009-10-23 固体撮像素子の製造方法

Publications (4)

Publication Number Publication Date
JP2010103540A JP2010103540A (ja) 2010-05-06
JP2010103540A6 JP2010103540A6 (ja) 2010-07-29
JP2010103540A5 JP2010103540A5 (enExample) 2011-10-20
JP5311666B2 true JP5311666B2 (ja) 2013-10-09

Family

ID=41506530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009244179A Expired - Fee Related JP5311666B2 (ja) 2008-10-24 2009-10-23 固体撮像素子の製造方法

Country Status (7)

Country Link
EP (1) EP2180516A3 (enExample)
JP (1) JP5311666B2 (enExample)
KR (1) KR101274794B1 (enExample)
CN (1) CN101728410B (enExample)
SG (1) SG161176A1 (enExample)
TW (1) TWI538182B (enExample)
WO (2) WO2010046994A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010016472U1 (de) 2009-12-15 2011-03-24 Isensee, Gerrit Ragnar Ulrich Friedrich, Maspalomas Modul zur Simulation einer belegten Sitzkontaktmatte in Fahrzeugen
JP2024069731A (ja) * 2021-03-17 2024-05-22 ソニーセミコンダクタソリューションズ株式会社 光電変換素子及び撮像装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129463A (ja) * 1983-01-14 1984-07-25 Nec Corp 固体撮像装置
JPH01168059A (ja) * 1987-12-24 1989-07-03 Fuji Photo Film Co Ltd 固体撮像素子
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
JPH02278874A (ja) * 1989-04-20 1990-11-15 Hitachi Ltd 固体撮像素子及びその製造方法
JPH02304976A (ja) * 1989-05-19 1990-12-18 Nec Corp 固体撮像素子
JPH03161970A (ja) * 1989-11-21 1991-07-11 Toshiba Corp 固体撮像装置
JP2719027B2 (ja) * 1990-04-02 1998-02-25 松下電子工業株式会社 電荷転送素子の製造方法
JP3247163B2 (ja) * 1992-09-14 2002-01-15 株式会社東芝 固体撮像装置及びその製造方法
JPH06252375A (ja) * 1993-03-01 1994-09-09 Hitachi Ltd 固体撮像装置
JPH06268189A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 固体撮像装置
JPH10107249A (ja) * 1996-09-27 1998-04-24 Sony Corp 固体撮像素子の製造方法
JPH10189936A (ja) * 1996-12-26 1998-07-21 Sony Corp 固体撮像素子及びその製造方法
KR100475733B1 (ko) * 1997-10-07 2005-07-07 삼성전자주식회사 전하결합형고체촬상소자및그제조방법
JP3152300B2 (ja) 1998-09-17 2001-04-03 日本電気株式会社 固体撮像素子及びその製造方法
JP2000196060A (ja) 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2001308309A (ja) * 2000-04-26 2001-11-02 Sony Corp 固体撮像素子及びその製造方法
EP1341235A3 (en) * 2002-02-28 2006-05-10 Canon Kabushiki Kaisha Image pickup apparatus
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2008112831A (ja) * 2006-10-30 2008-05-15 Fujifilm Corp 固体撮像素子及びこれを備えた撮像装置
JP5114968B2 (ja) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2010046994A1 (ja) 2010-04-29
JP2010103540A (ja) 2010-05-06
SG161176A1 (en) 2010-05-27
CN101728410B (zh) 2013-10-30
WO2010047412A1 (ja) 2010-04-29
KR20100045944A (ko) 2010-05-04
KR101274794B1 (ko) 2013-06-13
TW201017875A (en) 2010-05-01
EP2180516A3 (en) 2013-10-23
CN101728410A (zh) 2010-06-09
EP2180516A2 (en) 2010-04-28
TWI538182B (zh) 2016-06-11

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