SG161176A1 - Solid-state image pickup element, solid-state image pickup device and production method therefor - Google Patents

Solid-state image pickup element, solid-state image pickup device and production method therefor

Info

Publication number
SG161176A1
SG161176A1 SG200906919-6A SG2009069196A SG161176A1 SG 161176 A1 SG161176 A1 SG 161176A1 SG 2009069196 A SG2009069196 A SG 2009069196A SG 161176 A1 SG161176 A1 SG 161176A1
Authority
SG
Singapore
Prior art keywords
conductive type
region
hole portion
solid
image pickup
Prior art date
Application number
SG200906919-6A
Other languages
English (en)
Inventor
Fujio Masuoka
Hiroki Nakamura
Original Assignee
Unisantis Electronics Jp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Jp Ltd filed Critical Unisantis Electronics Jp Ltd
Publication of SG161176A1 publication Critical patent/SG161176A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SG200906919-6A 2008-10-24 2009-10-16 Solid-state image pickup element, solid-state image pickup device and production method therefor SG161176A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/069321 WO2010046994A1 (ja) 2008-10-24 2008-10-24 固体撮像素子、固体撮像装置及びその製造方法

Publications (1)

Publication Number Publication Date
SG161176A1 true SG161176A1 (en) 2010-05-27

Family

ID=41506530

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906919-6A SG161176A1 (en) 2008-10-24 2009-10-16 Solid-state image pickup element, solid-state image pickup device and production method therefor

Country Status (7)

Country Link
EP (1) EP2180516A3 (enExample)
JP (1) JP5311666B2 (enExample)
KR (1) KR101274794B1 (enExample)
CN (1) CN101728410B (enExample)
SG (1) SG161176A1 (enExample)
TW (1) TWI538182B (enExample)
WO (2) WO2010046994A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010016472U1 (de) 2009-12-15 2011-03-24 Isensee, Gerrit Ragnar Ulrich Friedrich, Maspalomas Modul zur Simulation einer belegten Sitzkontaktmatte in Fahrzeugen
JP2024069731A (ja) * 2021-03-17 2024-05-22 ソニーセミコンダクタソリューションズ株式会社 光電変換素子及び撮像装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129463A (ja) * 1983-01-14 1984-07-25 Nec Corp 固体撮像装置
JPH01168059A (ja) * 1987-12-24 1989-07-03 Fuji Photo Film Co Ltd 固体撮像素子
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
JPH02278874A (ja) * 1989-04-20 1990-11-15 Hitachi Ltd 固体撮像素子及びその製造方法
JPH02304976A (ja) * 1989-05-19 1990-12-18 Nec Corp 固体撮像素子
JPH03161970A (ja) * 1989-11-21 1991-07-11 Toshiba Corp 固体撮像装置
JP2719027B2 (ja) * 1990-04-02 1998-02-25 松下電子工業株式会社 電荷転送素子の製造方法
JP3247163B2 (ja) * 1992-09-14 2002-01-15 株式会社東芝 固体撮像装置及びその製造方法
JPH06252375A (ja) * 1993-03-01 1994-09-09 Hitachi Ltd 固体撮像装置
JPH06268189A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 固体撮像装置
JPH10107249A (ja) * 1996-09-27 1998-04-24 Sony Corp 固体撮像素子の製造方法
JPH10189936A (ja) * 1996-12-26 1998-07-21 Sony Corp 固体撮像素子及びその製造方法
KR100475733B1 (ko) * 1997-10-07 2005-07-07 삼성전자주식회사 전하결합형고체촬상소자및그제조방법
JP3152300B2 (ja) 1998-09-17 2001-04-03 日本電気株式会社 固体撮像素子及びその製造方法
JP2000196060A (ja) 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2001308309A (ja) * 2000-04-26 2001-11-02 Sony Corp 固体撮像素子及びその製造方法
EP1341235A3 (en) * 2002-02-28 2006-05-10 Canon Kabushiki Kaisha Image pickup apparatus
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2008112831A (ja) * 2006-10-30 2008-05-15 Fujifilm Corp 固体撮像素子及びこれを備えた撮像装置
JP5114968B2 (ja) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2010046994A1 (ja) 2010-04-29
JP2010103540A (ja) 2010-05-06
CN101728410B (zh) 2013-10-30
WO2010047412A1 (ja) 2010-04-29
KR20100045944A (ko) 2010-05-04
JP5311666B2 (ja) 2013-10-09
KR101274794B1 (ko) 2013-06-13
TW201017875A (en) 2010-05-01
EP2180516A3 (en) 2013-10-23
CN101728410A (zh) 2010-06-09
EP2180516A2 (en) 2010-04-28
TWI538182B (zh) 2016-06-11

Similar Documents

Publication Publication Date Title
JP4832541B2 (ja) 固体撮像素子および電子情報機器
EP2197032B1 (en) Solid-state imaging device
TW200733371A (en) Solid-state imaging device
JP2005142503A5 (enExample)
CN206349365U (zh) 图像传感器
CN102881703A (zh) 图像传感器及其制备方法
TW200539437A (en) Solid-state image pickup device
TW200635062A (en) MOS image sensor
EP1801878A3 (en) Solid-state image sensor using junction gate type field-effect transistor as pixel
TW200419792A (en) Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor
JP2018014409A5 (enExample)
TW201130127A (en) Solid-state imaging device, method of manufacturing same, and electronic apparatus
KR20060076390A (ko) Ｃｍｏｓ 이미지 센서 및 그의 제조 방법
US20080121952A1 (en) Cmos image sensor
CN102544038A (zh) 用于产生图像传感器中的光电检测器隔离的方法
CN206574714U (zh) 隔离结构和包含该隔离结构的图像传感器
TW200723516A (en) Method for fabricating CMOS image sensor
TW200701444A (en) Solid-state imaging device and method for fabricating the same
TW200620640A (en) Image sensor with improved charge transfer efficiency and method for fabricating the same
KR100782312B1 (ko) 고화질 ｃｍｏｓ 이미지 센서 및 포토 다이오드
EP2180516A3 (en) Solid-state image pickup element, solid-state image pickup device and production method therefor
JP2007110133A (ja) Ｃｍｏｓイメージセンサ及びその製造方法
CN112133715B (zh) 一种图像传感器结构
CN100463205C (zh) 固体摄像装置及其制造方法
CN104617120B (zh) 背照式图像传感器