SG161176A1 - Solid-state image pickup element, solid-state image pickup device and production method therefor - Google Patents

Solid-state image pickup element, solid-state image pickup device and production method therefor

Info

Publication number
SG161176A1
SG161176A1 SG200906919-6A SG2009069196A SG161176A1 SG 161176 A1 SG161176 A1 SG 161176A1 SG 2009069196 A SG2009069196 A SG 2009069196A SG 161176 A1 SG161176 A1 SG 161176A1
Authority
SG
Singapore
Prior art keywords
conductive type
region
hole portion
solid
image pickup
Prior art date
Application number
SG200906919-6A
Inventor
Fujio Masuoka
Hiroki Nakamura
Original Assignee
Unisantis Electronics Jp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Jp Ltd filed Critical Unisantis Electronics Jp Ltd
Publication of SG161176A1 publication Critical patent/SG161176A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a ratio of a surface area of a light-receiving section to the overall surface area of one pixel. The solid-state image pickup element comprises a first-conductive type planar semiconductor layer formed on a second- conductive type planar semiconductor layer, a hole portion formed in the first- conductive type planar semiconductor layer to define a hole therein, a first- conductive type high-concentration impurity region formed in a bottom wall of the hole portion, a first-conductive type high-concentration impurity-doped element isolation region formed in a part of a sidewall of the hole portion and connected to the first- conductive type high-concentration impurity region, a second-conductive type photoelectric conversion region formed beneath the first-conductive type high- concentration impurity region and in a part of a lower region of the remaining part of the sidewall of the hole portion, and adapted to undergo a change in charge amount upon receiving light, a transfer electrode formed on the sidewall of the hole portion through a gate dielectric film, a second-conductive type CCD channel region formed in a top surface of the first-conductive type planar semiconductor layerand in a part of an upper region of the remaining part of the sidewall of the hole portion, and a read channel formed in a region of the first- conductive type planar semiconductor layer sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region. (Figure 4)
SG200906919-6A 2008-10-24 2009-10-16 Solid-state image pickup element, solid-state image pickup device and production method therefor SG161176A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/069321 WO2010046994A1 (en) 2008-10-24 2008-10-24 Solid-state image sensor, solid-state image pickup device and its manufacturing method

Publications (1)

Publication Number Publication Date
SG161176A1 true SG161176A1 (en) 2010-05-27

Family

ID=41506530

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906919-6A SG161176A1 (en) 2008-10-24 2009-10-16 Solid-state image pickup element, solid-state image pickup device and production method therefor

Country Status (6)

Country Link
EP (1) EP2180516A3 (en)
KR (1) KR101274794B1 (en)
CN (1) CN101728410B (en)
SG (1) SG161176A1 (en)
TW (1) TWI538182B (en)
WO (2) WO2010046994A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010016472U1 (en) 2009-12-15 2011-03-24 Isensee, Gerrit Ragnar Ulrich Friedrich, Maspalomas Module for simulating an occupied seat contact mat in vehicles
JP2024069731A (en) * 2021-03-17 2024-05-22 ソニーセミコンダクタソリューションズ株式会社 Photoelectric conversion element and imaging device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129463A (en) * 1983-01-14 1984-07-25 Nec Corp Solid-state image pickup device
JPH01168059A (en) * 1987-12-24 1989-07-03 Fuji Photo Film Co Ltd Solid state image sensor
JP2517375B2 (en) * 1988-12-19 1996-07-24 三菱電機株式会社 Solid-state imaging device, charge transfer device used in the device, and manufacturing method thereof
JPH02278874A (en) * 1989-04-20 1990-11-15 Hitachi Ltd Solid state image sensor and manufacture thereof
JPH02304976A (en) * 1989-05-19 1990-12-18 Nec Corp Solid image-puckup element
JPH03161970A (en) * 1989-11-21 1991-07-11 Toshiba Corp Solid-state image sensing device
JP2719027B2 (en) * 1990-04-02 1998-02-25 松下電子工業株式会社 Method for manufacturing charge transfer device
JP3247163B2 (en) * 1992-09-14 2002-01-15 株式会社東芝 Solid-state imaging device and manufacturing method thereof
JPH06252375A (en) * 1993-03-01 1994-09-09 Hitachi Ltd Solid-state image pickup device
JPH06268189A (en) * 1993-03-15 1994-09-22 Toshiba Corp Solid-state image sensing device
JPH10107249A (en) * 1996-09-27 1998-04-24 Sony Corp Manufacture of solid image-pickup element
JPH10189936A (en) * 1996-12-26 1998-07-21 Sony Corp Solid-state image sensor and manufacture thereof
KR100475733B1 (en) * 1997-10-07 2005-07-07 삼성전자주식회사 Ccd type image sensor and manufacturing method thereof
JP3152300B2 (en) 1998-09-17 2001-04-03 日本電気株式会社 Solid-state imaging device and method of manufacturing the same
JP2000196060A (en) 1998-12-24 2000-07-14 Nec Corp Solid-state image sensor and manufacture thereof
JP2001308309A (en) * 2000-04-26 2001-11-02 Sony Corp Solid-state image pickup element and its manufacturing method
EP1341235A3 (en) * 2002-02-28 2006-05-10 Canon Kabushiki Kaisha Image pickup apparatus
KR100690884B1 (en) * 2005-04-28 2007-03-09 삼성전자주식회사 Image sensor and fabricating method for the same
JP2008112831A (en) * 2006-10-30 2008-05-15 Fujifilm Corp Solid-state imaging element, and imaging apparatus equipped with it
JP5114968B2 (en) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP2180516A3 (en) 2013-10-23
WO2010047412A1 (en) 2010-04-29
WO2010046994A1 (en) 2010-04-29
CN101728410A (en) 2010-06-09
TWI538182B (en) 2016-06-11
KR101274794B1 (en) 2013-06-13
KR20100045944A (en) 2010-05-04
EP2180516A2 (en) 2010-04-28
CN101728410B (en) 2013-10-30
TW201017875A (en) 2010-05-01

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