JP5277610B2 - 発光装置及び面発光装置並びに発光装置用パッケージ - Google Patents

発光装置及び面発光装置並びに発光装置用パッケージ

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Publication number
JP5277610B2
JP5277610B2 JP2007280449A JP2007280449A JP5277610B2 JP 5277610 B2 JP5277610 B2 JP 5277610B2 JP 2007280449 A JP2007280449 A JP 2007280449A JP 2007280449 A JP2007280449 A JP 2007280449A JP 5277610 B2 JP5277610 B2 JP 5277610B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
package
recess
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007280449A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009111068A5 (enExample
JP2009111068A (ja
Inventor
知明 柏尾
武夫 栗本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2007280449A priority Critical patent/JP5277610B2/ja
Priority to US12/259,899 priority patent/US8759866B2/en
Publication of JP2009111068A publication Critical patent/JP2009111068A/ja
Publication of JP2009111068A5 publication Critical patent/JP2009111068A5/ja
Application granted granted Critical
Publication of JP5277610B2 publication Critical patent/JP5277610B2/ja
Priority to US14/276,958 priority patent/US9465154B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)
JP2007280449A 2007-10-29 2007-10-29 発光装置及び面発光装置並びに発光装置用パッケージ Active JP5277610B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007280449A JP5277610B2 (ja) 2007-10-29 2007-10-29 発光装置及び面発光装置並びに発光装置用パッケージ
US12/259,899 US8759866B2 (en) 2007-10-29 2008-10-28 Light emitting device
US14/276,958 US9465154B2 (en) 2007-10-29 2014-05-13 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007280449A JP5277610B2 (ja) 2007-10-29 2007-10-29 発光装置及び面発光装置並びに発光装置用パッケージ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013107660A Division JP5549759B2 (ja) 2013-05-22 2013-05-22 発光装置及び面発光装置並びに発光装置用パッケージ

Publications (3)

Publication Number Publication Date
JP2009111068A JP2009111068A (ja) 2009-05-21
JP2009111068A5 JP2009111068A5 (enExample) 2010-11-18
JP5277610B2 true JP5277610B2 (ja) 2013-08-28

Family

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JP2007280449A Active JP5277610B2 (ja) 2007-10-29 2007-10-29 発光装置及び面発光装置並びに発光装置用パッケージ

Country Status (2)

Country Link
US (2) US8759866B2 (enExample)
JP (1) JP5277610B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5251788B2 (ja) * 2009-08-25 2013-07-31 豊田合成株式会社 サイドビュータイプの発光装置及びその製造方法
MY170920A (en) 2010-11-02 2019-09-17 Carsem M Sdn Bhd Leadframe package with recessed cavity for led
MY156107A (en) 2011-11-01 2016-01-15 Carsem M Sdn Bhd Large panel leadframe
JP6078948B2 (ja) 2012-01-20 2017-02-15 日亜化学工業株式会社 発光装置用パッケージ成形体及びそれを用いた発光装置
JP6236999B2 (ja) * 2013-08-29 2017-11-29 日亜化学工業株式会社 発光装置
US9640743B2 (en) * 2014-09-29 2017-05-02 Nichia Corporation Method for manufacturing package, method for manufacturing light emitting device, package and light emitting device
JP6395045B2 (ja) 2014-11-18 2018-09-26 日亜化学工業株式会社 複合基板並びに発光装置及びその製造方法
JP6206442B2 (ja) * 2015-04-30 2017-10-04 日亜化学工業株式会社 パッケージ及びその製造方法、並びに発光装置
CN110319375B (zh) * 2018-03-30 2022-02-15 松下知识产权经营株式会社 照明装置

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DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
JPH0837339A (ja) * 1994-07-21 1996-02-06 Nec Corp 反射光防止型半導体レーザダイオード装置
JP3488570B2 (ja) * 1996-03-29 2004-01-19 ローム株式会社 Ｌｅｄ発光装置およびこれを用いた面発光照明装置
JP4125848B2 (ja) * 1999-12-17 2008-07-30 ローム株式会社 ケース付チップ型発光装置
USD453745S1 (en) * 1999-12-27 2002-02-19 Nichia Corporation Light emitting diode
USD490782S1 (en) * 1999-12-27 2004-06-01 Nichia Corporation Light emitting diode
JP4066608B2 (ja) * 2001-03-16 2008-03-26 日亜化学工業株式会社 パッケージ成形体及びその製造方法
ATE425556T1 (de) * 2001-04-12 2009-03-15 Matsushita Electric Works Ltd Lichtquellenbauelement mit led und verfahren zu seiner herstellung
JP3991961B2 (ja) 2002-09-05 2007-10-17 日亜化学工業株式会社 側面発光型発光装置
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP4144498B2 (ja) * 2002-10-01 2008-09-03 松下電器産業株式会社 線状光源装置及びその製造方法、並びに、面発光装置
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JP2005252168A (ja) * 2004-03-08 2005-09-15 Nichia Chem Ind Ltd 表面実装型発光装置
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JP4830321B2 (ja) * 2005-03-14 2011-12-07 パナソニック株式会社 半導体発光装置
JP2006253550A (ja) * 2005-03-14 2006-09-21 Matsushita Electric Ind Co Ltd 線状光源装置の製造方法
JP2006286348A (ja) * 2005-03-31 2006-10-19 Minebea Co Ltd 面状照明装置
JP2006351773A (ja) * 2005-06-15 2006-12-28 Rohm Co Ltd 半導体発光装置
KR20080033164A (ko) * 2005-07-04 2008-04-16 마츠시타 덴끼 산교 가부시키가이샤 선형광원장치, 면 발광장치 및 액정표시장치
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JP2007116107A (ja) * 2005-09-22 2007-05-10 Toshiba Lighting & Technology Corp 発光装置
USD566664S1 (en) * 2006-09-08 2008-04-15 Lg Innotek Co., Ltd. Light-emitting diode (LED)
KR100981214B1 (ko) * 2008-01-28 2010-09-10 알티전자 주식회사 발광다이오드 패키지
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package

Also Published As

Publication number Publication date
US20090114936A1 (en) 2009-05-07
JP2009111068A (ja) 2009-05-21
US8759866B2 (en) 2014-06-24
US20140247621A1 (en) 2014-09-04
US9465154B2 (en) 2016-10-11

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