JP5273394B2 - 垂直方向過渡電圧サプレッサ(tvs)とemiフィルタのための回路構成と製造処理 - Google Patents
垂直方向過渡電圧サプレッサ(tvs)とemiフィルタのための回路構成と製造処理 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 23
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Description
Claims (14)
- 基板の底表面まで及ぶ高濃度ドープ層を含み、前記高濃度ドープ層が第1の導電型のドーパント濃度を有する、前記基板と、
上表面を有し、前記高濃度ドープ層が底表面を有する、前記高濃度ドープ層上部の上の第1の導電型のEpi層と、
第1のチャネルの前記上部半導体領域へと結合する入力電極と、
第2のチャネルの前記上部半導体領域へと結合する出力電極と、
前記入力電極と、前記出力電極との間を直列に電気的に結合する抵抗として機能する絶縁されたポリシリコン層と、
を含み、
それぞれのチャネルが、
前記Epi層上部の上に配置され、前記Epi層とPN接合点を形成する、前記第1の導電型と相対する第2の導電型のボディ領域とをさらに含む、
組込型のEMIフィルタ装置を備えるマルチチャネル垂直方向過渡電圧サプレッサ(VTVS)。 - 前記Epi層の上表面と同一平面上にある上表面を有し、前記ボディ領域上部の上に配置される、前記ボディ領域のドーパント濃度よりも高いドーパント濃度を有する第1の導電型の上部半導体領域をさらに含み、
前記上部半導体領域、前記ボディ領域、および前記Epi層、ならびに基板がバイポーラトランジスタを形成する、
請求項1の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記第1の導電型がN型から成り、前記第2の導電型がP型から成り、前記ボディ領域は前記Epi層に金属電極を介して短絡される、請求項2の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。
- 前記第1の導電型がP型から成り、前記第2の導電型がN型から成り、前記ボディ領域は前記上部半導体領域に金属電極を介して短絡される、請求項2の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。
- 前記Epi層へと開口されるトレンチをさらに含み、前記トレンチが第1の誘電体層によって画定される側壁と底部とを有する、
請求項2の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記トレンチが、前記Epi層を通して前記高濃度ドープされた基板へと開口される、
請求項5の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記トレンチがさらに、前記上部半導体領域と、前記ボディ領域とを通して開口される、
請求項5の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記トレンチがさらに導電材料で充填される、
請求項4の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 第3のチャネルの前記上部半導体領域に結合された接地電極と、をさらに含み、前記基板の底部は浮遊しており、それによって、前記マルチチャネルVTVS装置が組込型のEMIフィルタを備える対称性VTVSとして機能する、
請求項4の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記Epi層へと開口されたトレンチをさらに含み、前記トレンチが第1の誘電体層によって画定される側壁と底部とを有し、前記第1の導電型がP型から成る、
請求項1の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記Epi層へと開口され、第1の誘電体層によって画定される側壁と底部とを有するトレンチと、
第3のチャネルの前記上部半導体領域に結合された接地電極と、
をさらに含み、
前記基板の底部は浮遊しており、それによって、前記マルチチャネルVTVS装置が組込型のEMIフィルタを備える対称性VTVSとして機能する、
請求項1の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記Epi層へと開口されたトレンチであって、前記トレンチに充填される導電材料を絶縁する第1の誘電体層によって画定される側壁と底部とを有する、前記トレンチ、をさらに含む、
請求項1の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記トレンチが、互いに絶縁された複数の導電層へと分割されている導電材料で充填され、
前記トレンチ内の前記複数の導電層のそれぞれが、前記上部半導体領域もしくは前記基板の底部のどちらかに電気的に結合する、
請求項12の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。 - 前記絶縁された導電性領域が、らせん構造から成る抵抗として機能し、さらにインダクタとして機能する、
請求項1の組込型のEMIフィルタ装置を備えるマルチチャネルVTVS。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/600,696 | 2006-11-16 | ||
US11/600,696 US7781826B2 (en) | 2006-11-16 | 2006-11-16 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
PCT/US2007/024149 WO2008063592A2 (en) | 2006-11-16 | 2007-11-16 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter |
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Publication Number | Publication Date |
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JP2010510662A JP2010510662A (ja) | 2010-04-02 |
JP5273394B2 true JP5273394B2 (ja) | 2013-08-28 |
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EP (1) | EP2087520A4 (ja) |
JP (1) | JP5273394B2 (ja) |
KR (1) | KR101164082B1 (ja) |
CN (2) | CN102623454B (ja) |
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WO2008063592A3 (en) | 2008-08-07 |
JP2010510662A (ja) | 2010-04-02 |
US7781826B2 (en) | 2010-08-24 |
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EP2087520A2 (en) | 2009-08-12 |
CN102623454A (zh) | 2012-08-01 |
TWI380429B (en) | 2012-12-21 |
WO2008063592A2 (en) | 2008-05-29 |
CN102623454B (zh) | 2015-09-23 |
EP2087520A4 (en) | 2011-05-25 |
KR101164082B1 (ko) | 2012-07-12 |
TW200826276A (en) | 2008-06-16 |
US20100314716A1 (en) | 2010-12-16 |
CN101536189B (zh) | 2012-06-06 |
US8338915B2 (en) | 2012-12-25 |
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