JP5270094B2 - 細型化されたボディを有する、狭いボディのダマシン・トライゲートＦｉｎＦＥＴ - Google Patents

細型化されたボディを有する、狭いボディのダマシン・トライゲートＦｉｎＦＥＴ Download PDF

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JP5270094B2
JP5270094B2 JP2006549311A JP2006549311A JP5270094B2 JP 5270094 B2 JP5270094 B2 JP 5270094B2 JP 2006549311 A JP2006549311 A JP 2006549311A JP 2006549311 A JP2006549311 A JP 2006549311A JP 5270094 B2 JP5270094 B2 JP 5270094B2
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fin
gate
forming
layer
dummy
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JP2007518271A5 (enExample
JP2007518271A (ja
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エス． アーメッド シブリー
ワン ハイホン
ユ ビン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006549311A 2004-01-12 2004-12-21 細型化されたボディを有する、狭いボディのダマシン・トライゲートＦｉｎＦＥＴ Expired - Lifetime JP5270094B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/754,540 US7186599B2 (en) 2004-01-12 2004-01-12 Narrow-body damascene tri-gate FinFET
US10/754,540 2004-01-12
PCT/US2004/043105 WO2005071727A1 (en) 2004-01-12 2004-12-21 Narrow-body damascene tri-gate finfet having thinned body

Publications (3)

Publication Number Publication Date
JP2007518271A JP2007518271A (ja) 2007-07-05
JP2007518271A5 JP2007518271A5 (enExample) 2008-02-14
JP5270094B2 true JP5270094B2 (ja) 2013-08-21

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ID=34739407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549311A Expired - Lifetime JP5270094B2 (ja) 2004-01-12 2004-12-21 細型化されたボディを有する、狭いボディのダマシン・トライゲートＦｉｎＦＥＴ

Country Status (8)

Country Link
US (1) US7186599B2 (enExample)
JP (1) JP5270094B2 (enExample)
KR (1) KR101066271B1 (enExample)
CN (1) CN100505183C (enExample)
DE (1) DE112004002633B4 (enExample)
GB (1) GB2426124B (enExample)
TW (1) TWI350002B (enExample)
WO (1) WO2005071727A1 (enExample)

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KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
WO2006069340A2 (en) * 2004-12-21 2006-06-29 Carnegie Mellon University Lithography and associated methods, devices, and systems
US7323374B2 (en) * 2005-09-19 2008-01-29 International Business Machines Corporation Dense chevron finFET and method of manufacturing same
KR100696197B1 (ko) * 2005-09-27 2007-03-20 한국전자통신연구원 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법
US7326976B2 (en) * 2005-11-15 2008-02-05 International Business Machines Corporation Corner dominated trigate field effect transistor
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
CN101385150A (zh) * 2006-02-13 2009-03-11 Nxp股份有限公司 栅极具有不同功函数的双栅极半导体器件及其制造方法
US20090321830A1 (en) * 2006-05-15 2009-12-31 Carnegie Mellon University Integrated circuit device, system, and method of fabrication
US7923337B2 (en) * 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
US20110147804A1 (en) * 2009-12-23 2011-06-23 Rishabh Mehandru Drive current enhancement in tri-gate MOSFETS by introduction of compressive metal gate stress using ion implantation
TWI582999B (zh) * 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
CN102810476B (zh) * 2011-05-31 2016-08-03 中国科学院微电子研究所 鳍式场效应晶体管的制造方法
CN103123900B (zh) * 2011-11-21 2015-09-02 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103123899B (zh) * 2011-11-21 2015-09-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103295899B (zh) * 2012-02-27 2016-03-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103456638B (zh) * 2012-06-05 2016-02-03 中芯国际集成电路制造(上海)有限公司 自对准GaAs FinFET结构及其制造方法
CN103579315B (zh) * 2012-07-25 2017-03-08 中国科学院微电子研究所 半导体器件及其制造方法
US8652891B1 (en) * 2012-07-25 2014-02-18 The Institute of Microelectronics Chinese Academy of Science Semiconductor device and method of manufacturing the same
US8847281B2 (en) * 2012-07-27 2014-09-30 Intel Corporation High mobility strained channels for fin-based transistors
CN103681329B (zh) * 2012-09-10 2017-07-11 中国科学院微电子研究所 半导体器件及其制造方法
KR101395026B1 (ko) * 2012-10-16 2014-05-15 경북대학교 산학협력단 질화물 반도체 소자 및 그 소자의 제조 방법
CN103854982B (zh) 2012-11-30 2016-09-28 中国科学院微电子研究所 半导体器件的制造方法
US9263554B2 (en) 2013-06-04 2016-02-16 International Business Machines Corporation Localized fin width scaling using a hydrogen anneal
KR102072410B1 (ko) 2013-08-07 2020-02-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9564445B2 (en) 2014-01-20 2017-02-07 International Business Machines Corporation Dummy gate structure for electrical isolation of a fin DRAM
CN105632936B (zh) * 2016-03-22 2018-10-16 上海华力微电子有限公司 一种双栅极鳍式场效应晶体管的制备方法

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US6225173B1 (en) * 1998-11-06 2001-05-01 Advanced Micro Devices, Inc. Recessed channel structure for manufacturing shallow source/drain extensions
US6114206A (en) * 1998-11-06 2000-09-05 Advanced Micro Devices, Inc. Multiple threshold voltage transistor implemented by a damascene process
US6365465B1 (en) * 1999-03-19 2002-04-02 International Business Machines Corporation Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
US6483156B1 (en) * 2000-03-16 2002-11-19 International Business Machines Corporation Double planar gated SOI MOSFET structure
FR2810157B1 (fr) * 2000-06-09 2002-08-16 Commissariat Energie Atomique Procede de realisation d'un composant electronique a source, drain et grille auto-allignes, en architecture damascene
JP4058751B2 (ja) * 2000-06-20 2008-03-12 日本電気株式会社 電界効果型トランジスタの製造方法
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
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US6475890B1 (en) * 2001-02-12 2002-11-05 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology
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US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same
US6642090B1 (en) * 2002-06-03 2003-11-04 International Business Machines Corporation Fin FET devices from bulk semiconductor and method for forming
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US6787854B1 (en) * 2003-03-12 2004-09-07 Advanced Micro Devices, Inc. Method for forming a fin in a finFET device
US6764884B1 (en) * 2003-04-03 2004-07-20 Advanced Micro Devices, Inc. Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
US6855989B1 (en) * 2003-10-01 2005-02-15 Advanced Micro Devices, Inc. Damascene finfet gate with selective metal interdiffusion

Also Published As

Publication number Publication date
KR101066271B1 (ko) 2011-09-21
TWI350002B (en) 2011-10-01
DE112004002633B4 (de) 2008-12-24
CN1902741A (zh) 2007-01-24
GB2426124A (en) 2006-11-15
CN100505183C (zh) 2009-06-24
GB2426124B (en) 2007-12-12
KR20060123480A (ko) 2006-12-01
WO2005071727A1 (en) 2005-08-04
US7186599B2 (en) 2007-03-06
GB0615126D0 (en) 2006-09-06
TW200529433A (en) 2005-09-01
US20050153485A1 (en) 2005-07-14
JP2007518271A (ja) 2007-07-05
DE112004002633T5 (de) 2007-01-04

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