CN100505183C - 具有减薄体的窄体金属镶嵌三栅极鳍状场效应晶体管 - Google Patents

具有减薄体的窄体金属镶嵌三栅极鳍状场效应晶体管 Download PDF

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Publication number
CN100505183C
CN100505183C CNB2004800403026A CN200480040302A CN100505183C CN 100505183 C CN100505183 C CN 100505183C CN B2004800403026 A CNB2004800403026 A CN B2004800403026A CN 200480040302 A CN200480040302 A CN 200480040302A CN 100505183 C CN100505183 C CN 100505183C
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China
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fin
gate
layer
oxide
forms
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Expired - Lifetime
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CNB2004800403026A
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English (en)
Chinese (zh)
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CN1902741A (zh
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S·S·艾哈迈德
汪海宏
俞斌
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNB2004800403026A 2004-01-12 2004-12-21 具有减薄体的窄体金属镶嵌三栅极鳍状场效应晶体管 Expired - Lifetime CN100505183C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/754,540 US7186599B2 (en) 2004-01-12 2004-01-12 Narrow-body damascene tri-gate FinFET
US10/754,540 2004-01-12

Publications (2)

Publication Number Publication Date
CN1902741A CN1902741A (zh) 2007-01-24
CN100505183C true CN100505183C (zh) 2009-06-24

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CNB2004800403026A Expired - Lifetime CN100505183C (zh) 2004-01-12 2004-12-21 具有减薄体的窄体金属镶嵌三栅极鳍状场效应晶体管

Country Status (8)

Country Link
US (1) US7186599B2 (enExample)
JP (1) JP5270094B2 (enExample)
KR (1) KR101066271B1 (enExample)
CN (1) CN100505183C (enExample)
DE (1) DE112004002633B4 (enExample)
GB (1) GB2426124B (enExample)
TW (1) TWI350002B (enExample)
WO (1) WO2005071727A1 (enExample)

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US7323374B2 (en) * 2005-09-19 2008-01-29 International Business Machines Corporation Dense chevron finFET and method of manufacturing same
KR100696197B1 (ko) * 2005-09-27 2007-03-20 한국전자통신연구원 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법
US7326976B2 (en) * 2005-11-15 2008-02-05 International Business Machines Corporation Corner dominated trigate field effect transistor
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
JP2009527105A (ja) * 2006-02-13 2009-07-23 エヌエックスピー ビー ヴィ 異なった動作機能を示すゲートを有する２重ゲート半導体デバイスおよびその製造方法
US20090321830A1 (en) * 2006-05-15 2009-12-31 Carnegie Mellon University Integrated circuit device, system, and method of fabrication
US7923337B2 (en) * 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
US20110147804A1 (en) * 2009-12-23 2011-06-23 Rishabh Mehandru Drive current enhancement in tri-gate MOSFETS by introduction of compressive metal gate stress using ion implantation
TWI538215B (zh) * 2011-03-25 2016-06-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
CN102810476B (zh) * 2011-05-31 2016-08-03 中国科学院微电子研究所 鳍式场效应晶体管的制造方法
CN103123899B (zh) * 2011-11-21 2015-09-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103123900B (zh) * 2011-11-21 2015-09-02 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103295899B (zh) * 2012-02-27 2016-03-30 中芯国际集成电路制造(上海)有限公司 FinFET器件制造方法
CN103456638B (zh) * 2012-06-05 2016-02-03 中芯国际集成电路制造(上海)有限公司 自对准GaAs FinFET结构及其制造方法
US8652891B1 (en) * 2012-07-25 2014-02-18 The Institute of Microelectronics Chinese Academy of Science Semiconductor device and method of manufacturing the same
CN103579315B (zh) * 2012-07-25 2017-03-08 中国科学院微电子研究所 半导体器件及其制造方法
US8847281B2 (en) * 2012-07-27 2014-09-30 Intel Corporation High mobility strained channels for fin-based transistors
CN103681329B (zh) * 2012-09-10 2017-07-11 中国科学院微电子研究所 半导体器件及其制造方法
KR101395026B1 (ko) * 2012-10-16 2014-05-15 경북대학교 산학협력단 질화물 반도체 소자 및 그 소자의 제조 방법
CN103854982B (zh) 2012-11-30 2016-09-28 中国科学院微电子研究所 半导体器件的制造方法
US9263554B2 (en) 2013-06-04 2016-02-16 International Business Machines Corporation Localized fin width scaling using a hydrogen anneal
KR102072410B1 (ko) 2013-08-07 2020-02-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9564445B2 (en) 2014-01-20 2017-02-07 International Business Machines Corporation Dummy gate structure for electrical isolation of a fin DRAM
CN105632936B (zh) * 2016-03-22 2018-10-16 上海华力微电子有限公司 一种双栅极鳍式场效应晶体管的制备方法

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US6114206A (en) * 1998-11-06 2000-09-05 Advanced Micro Devices, Inc. Multiple threshold voltage transistor implemented by a damascene process
US20020130354A1 (en) * 2001-03-13 2002-09-19 National Inst. Of Advanced Ind. Science And Tech. Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
US20020153587A1 (en) * 2000-03-16 2002-10-24 International Business Machines Corporation Double planar gated SOI MOSFET structure
US6472258B1 (en) * 2000-11-13 2002-10-29 International Business Machines Corporation Double gate trench transistor
US20020177263A1 (en) * 2001-05-24 2002-11-28 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same

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US6365465B1 (en) * 1999-03-19 2002-04-02 International Business Machines Corporation Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
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US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6475890B1 (en) * 2001-02-12 2002-11-05 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology
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US6764884B1 (en) 2003-04-03 2004-07-20 Advanced Micro Devices, Inc. Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
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US6114206A (en) * 1998-11-06 2000-09-05 Advanced Micro Devices, Inc. Multiple threshold voltage transistor implemented by a damascene process
US20020153587A1 (en) * 2000-03-16 2002-10-24 International Business Machines Corporation Double planar gated SOI MOSFET structure
US6472258B1 (en) * 2000-11-13 2002-10-29 International Business Machines Corporation Double gate trench transistor
US20020130354A1 (en) * 2001-03-13 2002-09-19 National Inst. Of Advanced Ind. Science And Tech. Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
US20020177263A1 (en) * 2001-05-24 2002-11-28 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same

Also Published As

Publication number Publication date
JP5270094B2 (ja) 2013-08-21
WO2005071727A1 (en) 2005-08-04
GB2426124B (en) 2007-12-12
JP2007518271A (ja) 2007-07-05
DE112004002633B4 (de) 2008-12-24
CN1902741A (zh) 2007-01-24
TWI350002B (en) 2011-10-01
GB0615126D0 (en) 2006-09-06
KR101066271B1 (ko) 2011-09-21
DE112004002633T5 (de) 2007-01-04
GB2426124A (en) 2006-11-15
KR20060123480A (ko) 2006-12-01
TW200529433A (en) 2005-09-01
US20050153485A1 (en) 2005-07-14
US7186599B2 (en) 2007-03-06

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