JP5270057B2 - シャワーヘッド - Google Patents
シャワーヘッド Download PDFInfo
- Publication number
- JP5270057B2 JP5270057B2 JP2001228708A JP2001228708A JP5270057B2 JP 5270057 B2 JP5270057 B2 JP 5270057B2 JP 2001228708 A JP2001228708 A JP 2001228708A JP 2001228708 A JP2001228708 A JP 2001228708A JP 5270057 B2 JP5270057 B2 JP 5270057B2
- Authority
- JP
- Japan
- Prior art keywords
- showerhead
- ring
- shower head
- mounting portion
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Description
Claims (21)
- シャワーヘッドであって、
孔のあいた中央部分と、
前記孔のあいた中央部分を囲み、第1の側を有する取付け部分と、
前記取付け部分の前記第1の側から延びる複数のボスであって、それぞれがシャワーヘッドの前記取付け部分と一体とされ、かつ、それぞれに取付け孔が設けられているボスと、
を有することを特徴とするシャワーヘッド。
- 前記取付け部分はアルミニウムであることを特徴とする請求項1に記載のシャワーヘッド。
- さらに、前記取付け部分の前記第1の側に設けられたリングを有することを特徴とする請求項1に記載のシャワーヘッド。
- さらに、前記取付け部分の前記第1の側に設けられたリングであって、前記リングは、前記ボスの何れかの側に位置していることを特徴とする請求項1に記載のシャワーヘッド。
- さらに、前記取付け部分の前記第1の側に設けられたリングであって、前記リングは、0.65より大きなアスペクト比を有することを特徴とする請求項1に記載のシャワーヘッド。
- 前記取り付け部分上に間隔をあけて設けられている8つのボスを有することを特徴とする請求項1に記載のシャワーヘッド。
- さらに、前記取付け部分の前記第1の側に設けられたリングであって、前記リングは、前記ボスの何れかの側に位置し、0.65より大きなアスペクト比を有することを特徴とする請求項1に記載のシャワーヘッド。
- さらに、前記孔のあいた部分と同一平面で、前記孔のあいた部分の周囲を囲み、0.635cmより大きな幅を有する面を有することを特徴とする請求項1のシャワーヘッド。
- シャワーヘッドであって、
孔のあいた中央部分と、
前記孔のあいた中央部分を囲み、第1の側を有する取付け部分と、
前記取付け部分の前記第1の側から延びるリングであって、前記リングの何れかの側で前記取付け部分に設けられた複数の取付け孔を有するリングと、
前記取付け部分の前記第1の側から延びる複数のボスであって、それぞれがシャワーヘッドの前記取付け部分と一体とされているボスと、
を有することを特徴とするシャワーヘッド。
- 前記取付け孔の各々は、さらに前記取付け部分の前記第1の側に設けられ、各ボスは、それを通る取付け孔を有することを特徴とする請求項9に記載のシャワーヘッド。
- 間隔をあけて配置された8つの取付け孔を有することを特徴とする請求項9に記載のシャワーヘッド。
- 前記取付け部分はアルミニウムであることを特徴とする請求項9に記載のシャワーヘッド。
- 前記ボスは、前記リングの何れかの側に配置されることを特徴とする請求項9に記載のシャワーヘッド。
- 前記リングは、0.65より大きなアスペクト比を有することを特徴とする請求項9に記載のシャワーヘッド。
- さらに、前記孔のあいた部分と同一平面で、前記孔のあいた部分の周囲を囲み、0.635cmより大きな幅を有する面を有することを特徴とする請求項9に記載のシャワーヘッド。
- 半導体プロセスチャンバであって、
内部のボリュームを画定する壁および蓋を有する処理チャンバと、
前記蓋に結合され、前記蓋との間に気体充満空間を確定するシャワーヘッドであって、孔のあいた中央部分及び前記孔のあいた中央部分を周囲を囲む取付け部分を有するシャワーヘッドと、
前記蓋と前記取付け部分間に設けられ、間隔をあけて前記蓋と前記取付け部分を保持するリングと、
前記取付け部分の前記第1の側から延びる複数のボスであって、それぞれがシャワーヘッドの前記取付け部分と一体とされているボスと、
を有することを特徴とする半導体プロセスチャンバ。
- 前記シャワーヘッドはアルミニウムであることを特徴とする請求項16に記載の半導体プロセスチャンバ。
- 前記取付け部分に間隔を空けて設けられた8つのボスを有することを特徴とする請求項16に記載の半導体プロセスチャンバ。
- さらに、前記取り付け部分の前記第1の側に設けられ、前記リングの何れかの側に位置している複数のボスを有することを特徴とする請求項16に記載の半導体プロセスチャンバ。
- 前記リングは、0.65より大きいアスペクト比を有することを特徴とする請求項16に記載の半導体プロセスチャンバ。
- さらに、前記孔のあいた部分と同一平面で、前記孔のあいた部分の周囲を囲み、0.635cmより大きな幅を有する面を有することを特徴とする請求項16に記載の半導体プロセスチャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/603,117 US6461435B1 (en) | 2000-06-22 | 2000-06-22 | Showerhead with reduced contact area |
US09/603117 | 2000-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002115069A JP2002115069A (ja) | 2002-04-19 |
JP5270057B2 true JP5270057B2 (ja) | 2013-08-21 |
Family
ID=24414162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001228708A Expired - Fee Related JP5270057B2 (ja) | 2000-06-22 | 2001-06-22 | シャワーヘッド |
Country Status (4)
Country | Link |
---|---|
US (1) | US6461435B1 (ja) |
EP (1) | EP1167571A3 (ja) |
JP (1) | JP5270057B2 (ja) |
KR (1) | KR100791419B1 (ja) |
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JP2002115069A (ja) | 2002-04-19 |
EP1167571A2 (en) | 2002-01-02 |
KR100791419B1 (ko) | 2008-01-07 |
EP1167571A3 (en) | 2002-04-10 |
US6461435B1 (en) | 2002-10-08 |
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