JP5068471B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5068471B2 JP5068471B2 JP2006096305A JP2006096305A JP5068471B2 JP 5068471 B2 JP5068471 B2 JP 5068471B2 JP 2006096305 A JP2006096305 A JP 2006096305A JP 2006096305 A JP2006096305 A JP 2006096305A JP 5068471 B2 JP5068471 B2 JP 5068471B2
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- 238000012545 processing Methods 0.000 title claims description 84
- 239000000758 substrate Substances 0.000 title claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 87
- 238000012546 transfer Methods 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 6
- 239000010445 mica Substances 0.000 claims description 5
- 229910052618 mica group Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 265
- 239000010408 film Substances 0.000 description 52
- 230000002093 peripheral effect Effects 0.000 description 34
- 238000000034 method Methods 0.000 description 26
- 230000001590 oxidative effect Effects 0.000 description 24
- 239000007800 oxidant agent Substances 0.000 description 23
- 239000002994 raw material Substances 0.000 description 23
- 238000010926 purge Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000010409 thin film Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 10
- 239000006200 vaporizer Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000007751 thermal spraying Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001784 detoxification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 4 ) Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Description
前記処理容器内に配置され、被処理基板が載置される載置台と、
前記載置台と対向する位置に設けられ、前記処理容器内へ処理ガスを吐出する処理ガス吐出機構と、
前記処理容器内を排気する排気機構と
を具備し、
前記処理ガス吐出機構は、前記処理ガスが導入されるガス流路が形成された複数のプレートからなる積層体を有し、
前記積層体の内部に、前記ガス流路を囲むように環状の温度調節室を設けており、
前記載置台は、被処理基板が載置される領域よりも外側の領域に、前記載置台から前記処理ガス吐出機構への熱拡散を低減する熱遮蔽体を有する、基板処理装置を提供する。
また、前記載置台の材質が炭化珪素(SiC)または窒化アルミニウム(AlN)であり、前記熱遮蔽体は、前記載置台の材質より熱伝導率が小さな材質で構成されていることが好ましい。
前記第1プレートの主面に当接する第2プレートと、
前記第2プレートに当接され、前記載置台に載置された被処理基板に対応して複数のガス吐出孔が形成された第3プレートと、
を有していてもよい。さらに、前記温度調節室を、前記第1プレート、前記第2プレートまたは前記第3プレートのいずれかに形成した凹部と、隣接するプレート面とにより形成してもよい。
図1は本発明の基板処理装置の一実施形態に係る成膜装置を示す断面図であり、図2は成膜装置の筐体の内部構造を示す平面図、図3はその上部平面図である。また、図4〜図11はこの成膜装置を構成するシャワーヘッドの構成部品を示す図である。なお、図1では、シャワーヘッドの断面は、後述する図6の線X-Xの部分での切断面が示されており、中央部を境に左右が非対称となっている。
シャワーヘッド40は、その外縁がリッド3上部と嵌合するように形成された筒状のシャワーベース(第1プレート)41と、このシャワーベース41の下面に密着した円盤状のガス拡散板(第2プレート)42と、このガス拡散板42の下面に取り付けられたシャワープレート(第3プレート)43とを有している。シャワーヘッド40を構成する最上部のシャワーベース41は、シャワーヘッド40全体の熱が外部に放散される構成となっている。シャワーヘッド40は全体的な形状が円柱状をなしているが、四角柱状であってもよい。
図示のように、載置台5のウエハ載置領域より外側の外周領域には、ウエハWの載置領域を囲むように環状の熱遮蔽体200が形成されている。熱遮蔽体200は、ウエハWが載置台5に載置された状態で、ウエハWの周縁部との間に所定の幅(例えば1〜2mm)の隙間が形成されるように設けられている。この隙間がない場合は、ウエハWの周縁部が熱遮蔽体200に接触して破損したり、擦れ等によりパーティクルを発生させたりする要因になる。
また、x方向に熱を拡散させる目的で、例えばアモルファスカーボンなどを用いることもできる。
なお、原子の配列方向がy方向の場合は、熱遮蔽体200にクラッキングが生じることがある。
また、載置台5の材質が窒化アルミニウム(AlN;熱伝導率130[W/m・K])である場合は、熱遮蔽体200の材質として例えば、ジルコニア(ZrO2;熱伝導率3[W/m・K])、窒化ケイ素(Si3N4;熱伝導率25.4[W/m・K])などを用いることが好ましい。
なお、シャワーヘッド40の中央部の第1ガス拡散部42aには伝熱柱42eを有しており、第2ガス拡散部42bには、複数の円柱状突起42hを有しているため、ガス拡散空間による断熱効果が緩和され、シャワーヘッド40の中央部の温度上昇を防止できる。よって、シャワーヘッド40全体の温度を均一に制御して成膜を行なうことが可能になる。
ガス供給源60は、原料ガスを生成するための気化器60hと、この気化器60hに液体原料(有機金属化合物)を供給する複数の原料タンク60a、原料タンク60b、原料タンク60c、溶媒タンク60dを備えている。そして、PZTの薄膜を形成する場合には、たとえば、有機溶媒に所定の温度に調整された液体原料として、原料タンク60aには、Pb(thd)2が貯留され、原料タンク60bには、Zr(dmhd)4が貯留され、原料タンク60cには、Ti(OiPr)2(thd)2が貯留されている。他の原料として、例えば、Pb(thd)2とZr(OiPr)2(thd)2とTi(OiPr)2(thd)2との組合せも使用できる。
また、溶媒タンク60dには、例えばCH3COO(CH2)3CH3(酢酸ブチル)等が貯留されている。他の溶媒として、例えばCH3(CH2)6CH3(n−オクタン)等を用いることもできる。
なお、図1では代表的に制御部300と、熱電対10、ヒーター電源出力ユニット93および冷媒源出力ユニット94との接続のみを図示している。
まず、処理容器2内は、底部排気流路71、排気合流部72、上昇排気流路73、横行排気管74および下降排気流路75を経由した排気経路にて図示しない真空ポンプによって排気されることにより、たとえば、100〜550Pa程度の真空度にされる。
また、処理容器2内の圧力を133.3〜666Pa(1〜5Torr)に調整する。
なお、図22において、上記以外の構成は、図1に記載の成膜装置と同様であるため、同一の構成には同一の符号を付して説明を省略する。
なお、伝熱柱402の形状は、図25のように円柱状に限るものではなく、前記第1ガス拡散部42a内に設けられた伝熱柱42eと同様に、例えば三角形、四角形、八角形等の多角形柱としてもよい。また、伝熱柱402の配置も、同心円状に限らず、例えば放射状等としてもよい。
なお、本実施形態では、温度調節室400内に導入した熱媒体ガスを、連通路406を介して処理容器2内の処理空間に排出することによって、熱媒体ガスの除害処理をプロセスガスの除害処理と同じ排気経路で行なうことができる。従って、熱媒体ガスの除害処理を別個に行なう必要がなくなり、排ガスの処理を一本化して排気経路を簡素化できるという利点もある。
図28および図29において、上記以外の構成は、図22に記載の成膜装置と同様であるため、同一の構成には同一の符号を付して説明を省略する。
さらに、シャワーヘッド40の中央部の第1ガス拡散部42aには伝熱柱42eを有しており、第2ガス拡散部42bには、複数の円柱状突起42hを有しているため、ガス拡散空間による断熱効果を緩和し、シャワーヘッド40の中央部の過熱を防止できる。
よって、シャワーヘッド40の温度をより均一化して成膜特性を改善することができる。
また、本発明は成膜装置に限らず、熱処理装置、プラズマ処理装置等の他のガス処理装置に適用可能である。
さらに、被処理基板として半導体ウエハを例にとって説明したが、これに限るものではなく、液晶表示装置(LCD)用ガラス基板に代表されるフラットパネルディスプレー(FPD)等、他の基板に対する処理にも適用することができる。さらに、被処理体が化合物半導体により構成される場合にも本発明を適用できる。
2;処理容器
3;リッド
4;リフレクター
5;載置台
6;アタッチメント
7;ベースリング
8;シールドベース
40;シャワーヘッド
41;シャワーベース
42;ガス拡散板
43;シャワープレート
100;ランプユニット
101;排気装置
200;熱遮蔽体
201;熱遮蔽体(積層)
300;制御部
400;温度調節室
401;凹部
402;伝熱柱
403;伝熱壁
Claims (11)
- 被処理基板を収容する処理容器と、
前記処理容器内に配置され、被処理基板が載置される載置台と、
前記載置台と対向する位置に設けられ、前記処理容器内へ処理ガスを吐出する処理ガス吐出機構と、
前記処理容器内を排気する排気機構と
を具備し、
前記処理ガス吐出機構は、前記処理ガスが導入されるガス流路が形成された複数のプレートからなる積層体を有し、
前記積層体の内部に、前記ガス流路を囲むように環状の温度調節室を設けており、
前記載置台は、被処理基板が載置される領域よりも外側の領域に、前記載置台から前記処理ガス吐出機構への熱拡散を低減する熱遮蔽体を有する、基板処理装置。 - 前記熱遮蔽体は、前記載置台の表面と平行な方向に熱を拡散させるものである、請求項1に記載の基板処理装置。
- 前記熱遮蔽体は、アルミナ(Al2O3)、アルミナ−炭化チタン(Al2O3−TiC)、ジルコニア(ZrO2)、窒化ケイ素(Si3N4)、マイカ、アモルファスカーボン、石英(SiO2)または多孔質材料により構成されている、請求項1または請求項2に記載の基板処理装置。
- 前記載置台の材質が炭化珪素(SiC)または窒化アルミニウム(AlN)であり、前記熱遮蔽体は、前記載置台の材質より熱伝導率が小さな材質で構成されている、請求項3に記載の基板処理装置。
- 前記熱遮蔽体は、溶射法またはスパッタ法により形成された被膜である、請求項1から請求項4のいずれか1項に記載の基板処理装置。
- 前記積層体は、前記処理ガスが導入される第1プレートと、
前記第1プレートの主面に当接する第2プレートと、
前記第2プレートに当接され、前記載置台に載置された被処理基板に対応して複数のガス吐出孔が形成された第3プレートと、
を有する、請求項1から請求項5のいずれか1項に記載の基板処理装置。 - 前記温度調節室を、前記第1プレート、前記第2プレートまたは前記第3プレートのいずれかに形成した凹部と、隣接するプレート面とにより形成した、請求項6に記載の基板処理装置。
- 前記凹部には、隣接するプレートに接する複数の伝熱用柱体が形成されている、請求項7に記載の基板処理装置。
- 前記凹部には、隣接するプレートに接する複数の伝熱用壁体が形成されている、請求項7に記載の基板処理装置。
- 前記温度調節室内へ温度調節用媒体を導入する導入路と、温度調節用媒体を排出する排出路と、を設けた、請求項1から請求項9のいずれか1項に記載の基板処理装置。
- 前記温度調節室内へ温度調節用媒体を導入する導入路を設けるとともに、前記温度調節室を前記処理容器内の処理空間と連通させた、請求項1から請求項9のいずれか1項に記載の基板処理装置。
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PCT/JP2007/057095 WO2007114335A1 (ja) | 2006-03-31 | 2007-03-30 | 基板処理装置および基板載置台 |
KR1020087015934A KR101027845B1 (ko) | 2006-03-31 | 2007-03-30 | 기판 처리 장치 및 기판 탑재대 |
CN2007800033268A CN101374973B (zh) | 2006-03-31 | 2007-03-30 | 基板处理装置以及基板载置台 |
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JP4865672B2 (ja) * | 2007-10-22 | 2012-02-01 | シャープ株式会社 | 気相成長装置及び半導体素子の製造方法 |
WO2009100409A2 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus |
JP2010232637A (ja) * | 2009-03-04 | 2010-10-14 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
US8613288B2 (en) * | 2009-12-18 | 2013-12-24 | Lam Research Ag | High temperature chuck and method of using same |
JP5409413B2 (ja) * | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Iii族窒化物半導体の気相成長装置 |
CN103014667B (zh) * | 2011-09-23 | 2015-07-01 | 理想能源设备(上海)有限公司 | 化学气相沉积装置 |
KR101804128B1 (ko) * | 2011-12-26 | 2017-12-05 | 주식회사 원익아이피에스 | 기판처리장치 |
JP6219238B2 (ja) | 2014-06-24 | 2017-10-25 | 東洋炭素株式会社 | サセプタ及びその製造方法 |
JP6384414B2 (ja) * | 2014-08-08 | 2018-09-05 | 東京エレクトロン株式会社 | 基板加熱装置、基板加熱方法、記憶媒体 |
JP2016081945A (ja) * | 2014-10-09 | 2016-05-16 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
CN106676499B (zh) * | 2015-11-06 | 2020-07-03 | 中微半导体设备(上海)股份有限公司 | 一种mocvd气体喷淋头预处理方法 |
CN107492490B (zh) * | 2016-06-12 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 半导体设备的成膜方法、氮化铝成膜方法以及电子装置 |
CN110050333B (zh) * | 2016-12-08 | 2023-06-09 | 应用材料公司 | 时间性原子层沉积处理腔室 |
US20180366354A1 (en) * | 2017-06-19 | 2018-12-20 | Applied Materials, Inc. | In-situ semiconductor processing chamber temperature apparatus |
JP7037640B2 (ja) * | 2018-03-28 | 2022-03-16 | 京セラ株式会社 | ヒータ及びヒータシステム |
US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
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