JP5231382B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5231382B2 JP5231382B2 JP2009269789A JP2009269789A JP5231382B2 JP 5231382 B2 JP5231382 B2 JP 5231382B2 JP 2009269789 A JP2009269789 A JP 2009269789A JP 2009269789 A JP2009269789 A JP 2009269789A JP 5231382 B2 JP5231382 B2 JP 5231382B2
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- JP
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- Prior art keywords
- wiring
- cap
- package
- cavity
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009269789A JP5231382B2 (ja) | 2009-11-27 | 2009-11-27 | 半導体装置 |
| US12/953,808 US8592959B2 (en) | 2009-11-27 | 2010-11-24 | Semiconductor device mounted on a wiring board having a cap |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009269789A JP5231382B2 (ja) | 2009-11-27 | 2009-11-27 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011114192A JP2011114192A (ja) | 2011-06-09 |
| JP2011114192A5 JP2011114192A5 (enExample) | 2012-09-20 |
| JP5231382B2 true JP5231382B2 (ja) | 2013-07-10 |
Family
ID=44068235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009269789A Active JP5231382B2 (ja) | 2009-11-27 | 2009-11-27 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8592959B2 (enExample) |
| JP (1) | JP5231382B2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011128140A (ja) * | 2009-11-19 | 2011-06-30 | Dainippon Printing Co Ltd | センサデバイス及びその製造方法 |
| JP5827476B2 (ja) * | 2011-03-08 | 2015-12-02 | 株式会社東芝 | 半導体モジュール及びその製造方法 |
| JP6003897B2 (ja) * | 2011-09-26 | 2016-10-05 | 日本電気株式会社 | 中空封止構造 |
| KR20130041645A (ko) * | 2011-10-17 | 2013-04-25 | 삼성전기주식회사 | 인쇄회로기판 |
| FR2995721B1 (fr) * | 2012-09-17 | 2014-11-21 | Commissariat Energie Atomique | Capot pour dispositif a rainure et a puce, dispositif equipe du capot, assemblage du dispositif avec un element filaire et procede de fabrication |
| JP2014072346A (ja) * | 2012-09-28 | 2014-04-21 | Nec Corp | 中空封止構造及び中空封止構造の製造方法 |
| JP6383147B2 (ja) * | 2013-12-10 | 2018-08-29 | 日本特殊陶業株式会社 | パッケージ |
| JP6247106B2 (ja) * | 2014-02-03 | 2017-12-13 | 新光電気工業株式会社 | 半導体装置 |
| US9693445B2 (en) * | 2015-01-30 | 2017-06-27 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Printed circuit board with thermal via |
| GB2555289B (en) * | 2015-06-10 | 2020-09-23 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| JP2017038019A (ja) * | 2015-08-13 | 2017-02-16 | 富士電機株式会社 | 半導体装置 |
| CN107534022B (zh) * | 2015-11-25 | 2019-03-15 | 京瓷株式会社 | 电子部件收纳用封装体、电子装置以及电子模块 |
| DE112016005452B4 (de) * | 2015-11-30 | 2022-05-05 | W.L. Gore & Associates, Inc. | Umgebungsschutzbarriere für einen Chip |
| US9870967B2 (en) * | 2016-03-10 | 2018-01-16 | Analog Devices, Inc. | Plurality of seals for integrated device package |
| US9887143B2 (en) * | 2016-03-25 | 2018-02-06 | Infineon Technologies Americas Corp. | Surface mount device package having improved reliability |
| US10177064B2 (en) * | 2016-08-26 | 2019-01-08 | Qorvo Us, Inc. | Air cavity package |
| US10269669B2 (en) * | 2016-12-14 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and method of forming the same |
| US10629545B2 (en) * | 2017-03-09 | 2020-04-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device |
| FR3069406A1 (fr) * | 2017-07-18 | 2019-01-25 | Stmicroelectronics (Grenoble 2) Sas | Boitier electronique et procede de fabrication |
| WO2019093269A1 (ja) * | 2017-11-09 | 2019-05-16 | Ngkエレクトロデバイス株式会社 | 蓋体および電子装置 |
| JP6929210B2 (ja) * | 2017-12-11 | 2021-09-01 | 株式会社ブリヂストン | タイヤ |
| US10867955B2 (en) * | 2018-09-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure having adhesive layer surrounded dam structure |
| CN111193492B (zh) * | 2018-11-14 | 2023-08-15 | 天津大学 | 封装结构、半导体器件、电子设备 |
| CN113692644B (zh) * | 2019-04-22 | 2024-10-25 | 京瓷株式会社 | 电子部件收纳用封装件、电子装置以及电子模块 |
| US20200411407A1 (en) * | 2019-06-26 | 2020-12-31 | Intel Corporation | Integrated circuit packages with solder thermal interface material |
| KR102430750B1 (ko) * | 2019-08-22 | 2022-08-08 | 스템코 주식회사 | 회로 기판 및 그 제조 방법 |
| CN115312549A (zh) * | 2021-05-05 | 2022-11-08 | 胜丽国际股份有限公司 | 传感器封装结构 |
| US11948893B2 (en) * | 2021-12-21 | 2024-04-02 | Qorvo Us, Inc. | Electronic component with lid to manage radiation feedback |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106947A (ja) | 1981-12-21 | 1983-06-25 | Fujitsu Ltd | 光センサ |
| JPS58177946A (ja) | 1982-04-13 | 1983-10-18 | Mitsui Toatsu Chem Inc | 3,3′−ジアミノベンゾフエノンの製造方法 |
| JPS58106947U (ja) * | 1982-01-14 | 1983-07-21 | 株式会社日立製作所 | 半導体の実装構造 |
| JPS58177946U (ja) * | 1982-05-21 | 1983-11-28 | 富士通株式会社 | Ic収容「きよう」体 |
| JPH0216758A (ja) * | 1988-07-05 | 1990-01-19 | Nec Corp | 半導体装置用キャップ |
| JPH03114247A (ja) * | 1989-09-28 | 1991-05-15 | Nec Yamagata Ltd | パッケージ型半導体装置 |
| JP2906756B2 (ja) * | 1991-08-06 | 1999-06-21 | イビデン株式会社 | 電子部品搭載用基板 |
| US5311402A (en) * | 1992-02-14 | 1994-05-10 | Nec Corporation | Semiconductor device package having locating mechanism for properly positioning semiconductor device within package |
| JPH0746709A (ja) | 1993-08-04 | 1995-02-14 | Fuji Heavy Ind Ltd | パラレルハイブリッド車のバッテリ充放電制御装置 |
| JPH09232551A (ja) * | 1996-02-26 | 1997-09-05 | Toshiba Corp | 光電変換装置 |
| JP3859340B2 (ja) * | 1998-01-06 | 2006-12-20 | 三菱電機株式会社 | 半導体装置 |
| AU2001272814A1 (en) * | 2000-07-25 | 2002-02-05 | Chan-Ik Park | Plastic package base, air cavity type package and their manufacturing methods |
| JP3533159B2 (ja) * | 2000-08-31 | 2004-05-31 | Nec化合物デバイス株式会社 | 半導体装置及びその製造方法 |
| US7064048B2 (en) * | 2003-10-17 | 2006-06-20 | United Microelectronics Corp. | Method of forming a semi-insulating region |
| DE102004021365A1 (de) * | 2004-03-16 | 2005-10-06 | Robert Bosch Gmbh | Gehäuse für eine elektronische Schaltung und Verfahren zum Abdichten des Gehäuses |
| JP4511278B2 (ja) * | 2004-08-11 | 2010-07-28 | 三洋電機株式会社 | セラミックパッケージ |
| TWI299552B (en) * | 2006-03-24 | 2008-08-01 | Advanced Semiconductor Eng | Package structure |
-
2009
- 2009-11-27 JP JP2009269789A patent/JP5231382B2/ja active Active
-
2010
- 2010-11-24 US US12/953,808 patent/US8592959B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8592959B2 (en) | 2013-11-26 |
| JP2011114192A (ja) | 2011-06-09 |
| US20110127655A1 (en) | 2011-06-02 |
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