JP5220348B2 - 半導体構造体およびその形式、方法(多層埋込みストレッサを形成するための構造および方法) - Google Patents
半導体構造体およびその形式、方法(多層埋込みストレッサを形成するための構造および方法) Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 238000000034 method Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims description 56
- 125000006850 spacer group Chemical group 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 22
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 description 30
- 238000002955 isolation Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
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- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000000224 chemical solution deposition Methods 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L29/66409—Unipolar field-effect transistors
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Description
半導体基板の表面に設けられた少なくとも1つの電界効果トランジスタと、
前記半導体基板の凹領域内の少なくとも1つの電界効果トランジスタの設定場所に設けられた段階的ドーパント分布構造および少なくとも第1の共形エピタキシャル半導体層を有する多層埋込みストレッサと、を含み、前記多層埋込みストレッサは前記少なくとも1つの電界効果トランジスタのチャネル領域に歪みを誘起する。
延長スペーサを有する少なくとも1つの電界効果トランジスタを半導体基板の表面に設けるステップであって、前記半導体基板が、前記少なくとも1つの電界効果トランジスタの設定場所に凹領域を有する該ステップと、
前記凹領域内の前記半導体基板の露出表面に第1のエピタキシャル半導体層を共形的に成長させるステップであって、前記第1のエピタキシャル半導体層の格子定数が、前記半導体基板の格子定数と異なっている該ステップと、
前記第1のエピタキシャル半導体層の上に第2のエピタキシャル半導体層を形成するステップであって、前記第2のエピタキシャル半導体層が、第1のエピタキシャル半導体層と同じ格子定数を有し、かつ第1のエピタキシャル半導体層よりも高いドーパント濃度を有する該ステップと、
前記第1および第2のエピタキシャル半導体層の上部内に延長領域を形成するステップと、を含む。
14 分離領域
16 凹領域
18 電界効果トランジスタ
26 第1の狭いスペーサ
28 第1のエピ半導体層
30 第2のエピ半導体層
34 ソース/ドレイン領域
36 第2の広いスペーサ
Claims (8)
- 応力デバイス・チャネルを有する半導体構造体を形成する方法であって、
延長スペーサを有する少なくとも1つの電界効果トランジスタを半導体基板の表面に設けるステップであって、前記半導体基板が、前記少なくとも1つの電界効果トランジスタの設定場所に凹領域を有する該ステップと、
前記凹領域内の前記半導体基板の露出表面に第1のエピタキシャル半導体層を共形的に成長させるステップであって、前記第1のエピタキシャル半導体層の格子定数が、前記半導体基板の格子定数と異なっている該ステップと、
前記第1のエピタキシャル半導体層の上に第2のエピタキシャル半導体層を形成するステップであって、前記第2のエピタキシャル半導体層が、前記第1のエピタキシャル半導体層と同じ格子定数を有し、かつ前記第1のエピタキシャル半導体層よりも高いドーパント濃度を有する該ステップと、
前記第1および第2のエピタキシャル半導体層の上部内に延長領域を形成するステップと、
前記延長スペーサに隣接して第2のスペーサを形成するステップと、
を含み、前記第2のスペーサは、前記延長領域を形成する前記ステップの後で形成される、
方法。 - 前記凹領域が、異方性エッチングによって形成される、請求項1に記載の方法。
- 前記凹領域が、等方性エッチングによって形成される、請求項1に記載の方法。
- 前記第1のエピタキシャル半導体層が、アンドープであるか、1E18原子/cm3以下のドーパント濃度を有するように形成される、請求項1に記載の方法。
- 前記第2のエピタキシャル半導体層が、1E18原子/cm3よりも高いドーパント濃度を有するように形成される、請求項1に記載の方法。
- 前記半導体基板が単結晶Si基板であり、前記第1および第2のエピタキシャル半導体層がSiGeを含む多層埋込みストレッサを形成する、請求項1に記載の方法。
- 前記半導体基板が単結晶Si基板であり、前記第1および第2のエピタキシャル半導体層がSi:Cを含む多層埋込みストレッサを形成する、請求項1に記載の方法。
- 前記少なくとも1つの電界効果トランジスタが、pFETおよびnFETを含み、前記pFETに関連した前記第1および第2のエピタキシャル半導体層が圧縮応力を受け、前記nFETに関連した前記第1および第2のエピタキシャル半導体層が引っ張り応力を受ける、請求項1に記載の方法。
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US11/423,227 US7618866B2 (en) | 2006-06-09 | 2006-06-09 | Structure and method to form multilayer embedded stressors |
US11/423227 | 2006-06-09 |
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JP5220348B2 true JP5220348B2 (ja) | 2013-06-26 |
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US (2) | US7618866B2 (ja) |
JP (1) | JP5220348B2 (ja) |
CN (1) | CN100524826C (ja) |
TW (1) | TW200807715A (ja) |
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JP2007220808A (ja) * | 2006-02-15 | 2007-08-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
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US20100059764A1 (en) | 2010-03-11 |
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