JP5190414B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5190414B2
JP5190414B2 JP2009127377A JP2009127377A JP5190414B2 JP 5190414 B2 JP5190414 B2 JP 5190414B2 JP 2009127377 A JP2009127377 A JP 2009127377A JP 2009127377 A JP2009127377 A JP 2009127377A JP 5190414 B2 JP5190414 B2 JP 5190414B2
Authority
JP
Japan
Prior art keywords
wiring
semiconductor device
blocks
power supply
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009127377A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010278104A5 (enExample
JP2010278104A (ja
Inventor
博茂 平野
行俊 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2009127377A priority Critical patent/JP5190414B2/ja
Priority to PCT/JP2009/007142 priority patent/WO2010137098A1/ja
Publication of JP2010278104A publication Critical patent/JP2010278104A/ja
Publication of JP2010278104A5 publication Critical patent/JP2010278104A5/ja
Priority to US13/289,683 priority patent/US8710667B2/en
Application granted granted Critical
Publication of JP5190414B2 publication Critical patent/JP5190414B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009127377A 2009-05-27 2009-05-27 半導体装置 Expired - Fee Related JP5190414B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009127377A JP5190414B2 (ja) 2009-05-27 2009-05-27 半導体装置
PCT/JP2009/007142 WO2010137098A1 (ja) 2009-05-27 2009-12-22 半導体装置
US13/289,683 US8710667B2 (en) 2009-05-27 2011-11-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009127377A JP5190414B2 (ja) 2009-05-27 2009-05-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2010278104A JP2010278104A (ja) 2010-12-09
JP2010278104A5 JP2010278104A5 (enExample) 2011-07-21
JP5190414B2 true JP5190414B2 (ja) 2013-04-24

Family

ID=43222242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009127377A Expired - Fee Related JP5190414B2 (ja) 2009-05-27 2009-05-27 半導体装置

Country Status (3)

Country Link
US (1) US8710667B2 (enExample)
JP (1) JP5190414B2 (enExample)
WO (1) WO2010137098A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102893397B (zh) * 2011-05-17 2016-04-13 松下电器产业株式会社 三维集成电路、处理器、半导体芯片及三维集成电路的制造方法
TWI475939B (zh) 2013-10-15 2015-03-01 Wistron Corp 散熱式鏤空之形成方法及形成之散熱式鏤空結構
JP2015207730A (ja) * 2014-04-23 2015-11-19 マイクロン テクノロジー, インク. 半導体装置
JP6295863B2 (ja) 2014-07-16 2018-03-20 富士通株式会社 電子部品、電子装置及び電子装置の製造方法
US9287208B1 (en) * 2014-10-27 2016-03-15 Intel Corporation Architecture for on-die interconnect
CN113224047A (zh) * 2020-01-21 2021-08-06 扬智科技股份有限公司 集成电路结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6308307B1 (en) * 1998-01-29 2001-10-23 Texas Instruments Incorporated Method for power routing and distribution in an integrated circuit with multiple interconnect layers
JP3692254B2 (ja) 1999-03-25 2005-09-07 京セラ株式会社 多層配線基板
US6483714B1 (en) 1999-02-24 2002-11-19 Kyocera Corporation Multilayered wiring board
JP4460227B2 (ja) 2003-03-10 2010-05-12 富士通マイクロエレクトロニクス株式会社 半導体集積回路
JP2005332903A (ja) 2004-05-19 2005-12-02 Matsushita Electric Ind Co Ltd 半導体装置
JP4539916B2 (ja) 2005-01-19 2010-09-08 ルネサスエレクトロニクス株式会社 半導体集積回路、半導体集積回路の設計方法、及び半導体集積回路の設計用プログラム
JP2008270319A (ja) * 2007-04-17 2008-11-06 Toshiba Corp 半導体装置
JP2009054702A (ja) 2007-08-24 2009-03-12 Panasonic Corp 半導体集積回路

Also Published As

Publication number Publication date
JP2010278104A (ja) 2010-12-09
US8710667B2 (en) 2014-04-29
US20120112354A1 (en) 2012-05-10
WO2010137098A1 (ja) 2010-12-02

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