JP5188120B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5188120B2 JP5188120B2 JP2007208883A JP2007208883A JP5188120B2 JP 5188120 B2 JP5188120 B2 JP 5188120B2 JP 2007208883 A JP2007208883 A JP 2007208883A JP 2007208883 A JP2007208883 A JP 2007208883A JP 5188120 B2 JP5188120 B2 JP 5188120B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring portion
- embedded wiring
- substrate
- heat
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 description 30
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Claims (8)
- 上面側に複数の凹部が設けられた基板と、
前記基板の凹部にめっき金属が充填されて形成された埋込配線部と、
前記埋込配線部に電気的に接続され、光出射部が上側を向いて配置された発光素子と、
前記基板の下面側に接続されたヒートシンクとを有し、
前記埋込配線部は第1埋込配線部と第2埋込配線部とを含み、前記発光素子は、下面に一方の電極及び他方の電極を有し、
前記一方の電極が前記第1埋込配線部に接続され、前記他方の電極が前記第2埋込配線部に接続され、
前記埋込配線部のトータルの面積は、発光素子の面積より大きく設定されていることを特徴とする半導体装置。 - 前記埋込配線部の厚みは、その下の前記基板の厚みより厚く設定されていることを特徴とする請求項1に記載の半導体装置。
- 前記基板はシリコン基板であり、前記凹部の内面に絶縁層が形成されていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記基板は、窒化アルミニウムセラミックス、アルミナセラミックス又は絶縁樹脂からなることを特徴とする請求項1又は2に記載の半導体装置。
- 前記埋込配線部の厚みは、50乃至300μmであることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
- 前記基板の下面に熱伝導シートを介して前記ヒートシンクが直接装着されていることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
- 前記埋込配線部は、前記基板の上面から突出した状態で前記凹部に埋め込まれていることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
- 前記埋込配線部は、シード層とその上の銅めっき層とから形成されることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208883A JP5188120B2 (ja) | 2007-08-10 | 2007-08-10 | 半導体装置 |
TW097126935A TW200910539A (en) | 2007-08-10 | 2008-07-16 | Heat radiation package and semiconductor device |
EP08161925.6A EP2023699B1 (en) | 2007-08-10 | 2008-08-06 | Heat radiation package with semiconductor device |
US12/187,641 US8368206B2 (en) | 2007-08-10 | 2008-08-07 | Heat radiation package and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208883A JP5188120B2 (ja) | 2007-08-10 | 2007-08-10 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009044027A JP2009044027A (ja) | 2009-02-26 |
JP2009044027A5 JP2009044027A5 (ja) | 2010-07-15 |
JP5188120B2 true JP5188120B2 (ja) | 2013-04-24 |
Family
ID=40010695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007208883A Active JP5188120B2 (ja) | 2007-08-10 | 2007-08-10 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8368206B2 (ja) |
EP (1) | EP2023699B1 (ja) |
JP (1) | JP5188120B2 (ja) |
TW (1) | TW200910539A (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9172012B2 (en) | 2007-10-31 | 2015-10-27 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US9666762B2 (en) | 2007-10-31 | 2017-05-30 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US9082921B2 (en) * | 2007-10-31 | 2015-07-14 | Cree, Inc. | Multi-die LED package |
KR20100094246A (ko) * | 2009-02-18 | 2010-08-26 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR100969146B1 (ko) | 2009-02-18 | 2010-07-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101064098B1 (ko) | 2009-02-23 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5305987B2 (ja) * | 2009-03-02 | 2013-10-02 | キヤノン株式会社 | 放熱ユニット及び露光装置 |
TWM366757U (en) * | 2009-04-27 | 2009-10-11 | Forward Electronics Co Ltd | AC LED packaging structure |
TW201203477A (en) * | 2010-01-29 | 2012-01-16 | Nitto Denko Corp | Power module |
CN201829527U (zh) * | 2010-05-31 | 2011-05-11 | 景德镇正宇奈米科技有限公司 | 具蜂巢状辐射散热装置的发光二极管结构 |
JPWO2012002580A1 (ja) * | 2010-07-01 | 2013-09-02 | シチズンホールディングス株式会社 | Led光源装置及びその製造方法 |
US10433414B2 (en) * | 2010-12-24 | 2019-10-01 | Rayben Technologies (HK) Limited | Manufacturing method of printing circuit board with micro-radiators |
KR101976531B1 (ko) * | 2011-12-22 | 2019-08-28 | 엘지이노텍 주식회사 | 발광 모듈 |
CN103078040B (zh) | 2011-08-22 | 2016-12-21 | Lg伊诺特有限公司 | 发光器件封装件和光装置 |
KR101852390B1 (ko) * | 2011-11-18 | 2018-04-26 | 엘지이노텍 주식회사 | 광원 모듈 |
JP2013153068A (ja) * | 2012-01-25 | 2013-08-08 | Shinko Electric Ind Co Ltd | 配線基板、発光装置及び配線基板の製造方法 |
US9089075B2 (en) * | 2012-03-27 | 2015-07-21 | Gerald Ho Kim | Silicon-based cooling package for cooling and thermally decoupling devices in close proximity |
KR101946912B1 (ko) * | 2012-05-14 | 2019-02-12 | 엘지이노텍 주식회사 | 광원모듈 및 이를 구비한 조명 시스템 |
EP2919286A4 (en) * | 2012-11-06 | 2016-05-11 | Ngk Insulators Ltd | SUBSTRATE FOR LIGHT-EMITTING DIODES |
JP6125528B2 (ja) | 2012-11-06 | 2017-05-10 | 日本碍子株式会社 | 発光ダイオード用基板および発光ダイオード用基板の製造方法 |
DE102015205354A1 (de) * | 2015-03-24 | 2016-09-29 | Osram Gmbh | Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe |
DE102015111307A1 (de) * | 2015-07-13 | 2017-01-19 | Epcos Ag | Bauelement mit verbesserter Wärmeableitung |
JP2018120999A (ja) * | 2017-01-27 | 2018-08-02 | 日本特殊陶業株式会社 | 配線基板 |
WO2020071498A1 (ja) * | 2018-10-03 | 2020-04-09 | シチズン電子株式会社 | インレイ基板及びそれを用いた発光装置 |
JP7307874B2 (ja) * | 2019-04-26 | 2023-07-13 | 日亜化学工業株式会社 | 発光装置及び発光モジュール |
JP7497578B2 (ja) | 2020-02-26 | 2024-06-11 | 富士フイルムビジネスイノベーション株式会社 | 発光装置、光学装置及び情報処理装置 |
DE102020112276A1 (de) * | 2020-05-06 | 2021-11-11 | Danfoss Silicon Power Gmbh | Leistungsmodul |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2914342B2 (ja) * | 1997-03-28 | 1999-06-28 | 日本電気株式会社 | 集積回路装置の冷却構造 |
JP4114975B2 (ja) * | 1997-08-18 | 2008-07-09 | 松下電器産業株式会社 | 電子回路基板 |
US6517218B2 (en) * | 2000-03-31 | 2003-02-11 | Relume Corporation | LED integrated heat sink |
US6535396B1 (en) * | 2000-04-28 | 2003-03-18 | Delphi Technologies, Inc. | Combination circuit board and segmented conductive bus substrate |
JP4742409B2 (ja) * | 2000-08-23 | 2011-08-10 | イビデン株式会社 | プリント配線板の製造方法 |
TW521409B (en) * | 2000-10-06 | 2003-02-21 | Shing Chen | Package of LED |
US7268479B2 (en) * | 2001-02-15 | 2007-09-11 | Integral Technologies, Inc. | Low cost lighting circuits manufactured from conductive loaded resin-based materials |
JP3530149B2 (ja) * | 2001-05-21 | 2004-05-24 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置 |
JP2003060142A (ja) * | 2001-08-14 | 2003-02-28 | Matsushita Electric Ind Co Ltd | サブマウント装置およびその製造方法 |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
JP3998984B2 (ja) * | 2002-01-18 | 2007-10-31 | 富士通株式会社 | 回路基板及びその製造方法 |
US7138711B2 (en) * | 2002-06-17 | 2006-11-21 | Micron Technology, Inc. | Intrinsic thermal enhancement for FBGA package |
JP4305896B2 (ja) * | 2002-11-15 | 2009-07-29 | シチズン電子株式会社 | 高輝度発光装置及びその製造方法 |
JP4209178B2 (ja) * | 2002-11-26 | 2009-01-14 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
JP2004207367A (ja) | 2002-12-24 | 2004-07-22 | Toyoda Gosei Co Ltd | 発光ダイオード及び発光ダイオード配列板 |
JP4254470B2 (ja) | 2003-10-10 | 2009-04-15 | 豊田合成株式会社 | 発光装置 |
JP2005064047A (ja) * | 2003-08-13 | 2005-03-10 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2005197659A (ja) * | 2003-12-08 | 2005-07-21 | Sony Corp | 光学装置及び画像生成装置 |
JP2008523637A (ja) * | 2004-12-14 | 2008-07-03 | ソウル オプト−デバイス カンパニー リミテッド | 複数の発光セルを有する発光素子及びそれを搭載したパッケージ |
KR101115800B1 (ko) * | 2004-12-27 | 2012-03-08 | 엘지디스플레이 주식회사 | 발광소자 패키지, 이의 제조 방법 및 백라이트 유닛 |
JP4857635B2 (ja) * | 2005-07-25 | 2012-01-18 | 豊田合成株式会社 | Ledランプユニット |
JP5148849B2 (ja) * | 2006-07-27 | 2013-02-20 | スタンレー電気株式会社 | Ledパッケージ、それを用いた発光装置およびledパッケージの製造方法 |
JP2009043881A (ja) * | 2007-08-08 | 2009-02-26 | Panasonic Corp | 放熱配線板とその製造方法 |
-
2007
- 2007-08-10 JP JP2007208883A patent/JP5188120B2/ja active Active
-
2008
- 2008-07-16 TW TW097126935A patent/TW200910539A/zh unknown
- 2008-08-06 EP EP08161925.6A patent/EP2023699B1/en active Active
- 2008-08-07 US US12/187,641 patent/US8368206B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009044027A (ja) | 2009-02-26 |
US8368206B2 (en) | 2013-02-05 |
US20090039379A1 (en) | 2009-02-12 |
EP2023699B1 (en) | 2015-07-08 |
TW200910539A (en) | 2009-03-01 |
EP2023699A2 (en) | 2009-02-11 |
EP2023699A3 (en) | 2010-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5188120B2 (ja) | 半導体装置 | |
JP4688526B2 (ja) | 半導体装置及びその製造方法 | |
JP5779042B2 (ja) | 半導体装置 | |
EP1848035B1 (en) | Semiconductor device with integrated heat spreader | |
JP2006210892A (ja) | 半導体装置 | |
JP2015211221A (ja) | シリコンを使用するチップレベル熱放散 | |
JP2007510297A (ja) | 放熱板を有する発光ダイオードの構成 | |
JP2009105297A (ja) | 樹脂封止型半導体装置 | |
US8569770B2 (en) | Light emitting device package | |
JP2004214548A (ja) | 部品内蔵基板型モジュール、それを搭載した基板、部品内蔵基板型モジュールの製造方法、および部品内蔵基板型モジュールを搭載した基板の製造方法 | |
JP2003031744A (ja) | 半導体装置 | |
JP4353042B2 (ja) | 半導体発光装置 | |
TWI445100B (zh) | 封裝結構及其製作方法 | |
JP2011035352A (ja) | 半導体装置 | |
WO2019021720A1 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2011103358A (ja) | 半導体実装構造体 | |
CN112399699A (zh) | 散热基板及其制作方法 | |
KR20030045950A (ko) | 방열판을 구비한 멀티 칩 패키지 | |
JP4375299B2 (ja) | パワー半導体装置 | |
JPH10247702A (ja) | ボールグリッドアレイパッケージ及びプリントボード | |
JP2012253073A (ja) | 半導体装置 | |
JP2008218561A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2005223348A (ja) | 多層基板 | |
JP4371946B2 (ja) | 半導体装置及びその基板接続構造 | |
JP4225243B2 (ja) | 半導体装置及び基板接続構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100601 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100601 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121113 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130122 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160201 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5188120 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |