JP5133852B2 - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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- JP5133852B2 JP5133852B2 JP2008290977A JP2008290977A JP5133852B2 JP 5133852 B2 JP5133852 B2 JP 5133852B2 JP 2008290977 A JP2008290977 A JP 2008290977A JP 2008290977 A JP2008290977 A JP 2008290977A JP 5133852 B2 JP5133852 B2 JP 5133852B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 71
- 230000002265 prevention Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 42
- 239000002344 surface layer Substances 0.000 claims description 41
- 238000004381 surface treatment Methods 0.000 claims description 24
- 229920000620 organic polymer Polymers 0.000 claims description 17
- 229910020175 SiOH Inorganic materials 0.000 claims description 16
- 239000004215 Carbon black (E152) Substances 0.000 claims description 13
- 229930195733 hydrocarbon Natural products 0.000 claims description 13
- 150000002430 hydrocarbons Chemical class 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 57
- 239000007789 gas Substances 0.000 description 42
- 239000010949 copper Substances 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 229910008051 Si-OH Inorganic materials 0.000 description 3
- 229910006358 Si—OH Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- QRHCILLLMDEFSD-UHFFFAOYSA-N bis(ethenyl)-dimethylsilane Chemical compound C=C[Si](C)(C)C=C QRHCILLLMDEFSD-UHFFFAOYSA-N 0.000 description 1
- PMSZNCMIJVNSPB-UHFFFAOYSA-N bis(ethenyl)silicon Chemical compound C=C[Si]C=C PMSZNCMIJVNSPB-UHFFFAOYSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WJKVFIFBAASZJX-UHFFFAOYSA-N dimethyl(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C)(C)C1=CC=CC=C1 WJKVFIFBAASZJX-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- NIRGFSKAFYZMKI-UHFFFAOYSA-N diphenyl(silyl)silane Chemical compound C=1C=CC=CC=1[SiH]([SiH3])C1=CC=CC=C1 NIRGFSKAFYZMKI-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- UFHILTCGAOPTOV-UHFFFAOYSA-N tetrakis(ethenyl)silane Chemical compound C=C[Si](C=C)(C=C)C=C UFHILTCGAOPTOV-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- KXFSUVJPEQYUGN-UHFFFAOYSA-N trimethyl(phenyl)silane Chemical compound C[Si](C)(C)C1=CC=CC=C1 KXFSUVJPEQYUGN-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Description
前記絶縁膜及び前記導電パターンの表面を、炭化水素ガスを処理ガスに含むプラズマで処理する第1表面処理工程と、
前記処理ガスに、Si含有ガスを徐々に又は段階的に添加量を増大しながら添加してプラズマCVDを行うことにより、前記絶縁膜上及び前記導電パターン上に、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜を形成する膜形成工程と、
を備える半導体装置の製造方法が提供される。
前記絶縁膜に埋め込まれた導電パターンと、
前記絶縁膜上及び前記導電パターン上に位置し、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜と、
を備え、
前記拡散防止膜は、上に行くに従って、徐々にまたは段階的にSiの濃度が高くなる半導体装置が提供される。
なお、本発明は、以下の構成を適用することも可能である。
(1)
SiOH、SiCOH、又は有機ポリマーからなる絶縁膜に、導電パターンを埋め込む埋込工程と、
前記絶縁膜及び前記導電パターンの表面を、炭化水素ガスを処理ガスに含むプラズマで処理する第1表面処理工程と、
前記処理ガスに、Si含有ガスを徐々に又は段階的に添加量を増大しながら添加してプラズマCVDを行うことにより、前記絶縁膜上及び前記導電パターン上に、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜を形成する膜形成工程と、
を備える半導体装置の製造方法。
(2)
(1)に記載の半導体装置の製造方法において、
前記絶縁膜は複数の空孔を有するポーラス膜である半導体装置の製造方法。
(3)
(1)または(2)に記載の半導体装置の製造方法において、
前記絶縁膜の比誘電率は2.7以下である半導体装置の製造方法。
(4)
(1)〜(3)のいずれか一つに記載の半導体装置の製造方法において、
前記第1表面処理工程において、前記絶縁膜及び前記導電パターンの表面にCH膜又はCHN膜が形成される半導体装置の製造方法。
(5)
(4)に記載の半導体装置の製造方法において、
前記膜形成工程において、前記拡散防止膜を前記CH膜又はCHN膜と連続するように形成する半導体装置の製造方法。
(6)
(5)に記載の半導体装置の製造方法において、
前記膜形成工程は、前記第1表面処理工程における前記プラズマを維持したまま前記Si含有ガスの添加を開始することにより行われる半導体装置の製造方法。
(7)
(1)〜(6)のいずれか一つに記載の半導体装置の製造方法において、
前記拡散防止膜は、上に行くに従って、徐々にまたは段階的にSiの濃度が高くなる半導体装置の製造方法。
(8)
(1)〜(7)のいずれか一つに記載の半導体装置の製造方法において、
前記埋込工程と、前記第1表面処理工程の間に、前記絶縁膜及び前記導電パターンの表面を還元プラズマで処理する第2表面処理工程を備える半導体装置の製造方法。
(9)
SiOH、SiCOH、又は有機ポリマーからなる絶縁膜と、
前記絶縁膜に埋め込まれた導電パターンと、
前記絶縁膜上及び前記導電パターン上に位置し、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜と、
を備え、
前記拡散防止膜は、上に行くに従って、徐々にまたは段階的にSiの濃度が高くなる半導体装置。
(10)
(9)に記載の半導体装置において、
前記絶縁膜及び前記導電パターンと、前記拡散防止膜の間に、CH膜又はCHN膜を備える半導体装置。
(11)
(9)又は(10)に記載の半導体装置において、
前記絶縁膜は複数の空孔を有するポーラス膜である半導体装置。
(12)
(9)〜(11)のいずれか一つに記載の半導体装置において、
前記絶縁膜は比誘電率が2.7以下である半導体装置。
(13)
(9)〜(12)のいずれか一つに記載の半導体装置において、
前記導電パターンは、表層にCを含有する半導体装置。
20 トランジスタ
30 層間絶縁膜
100 絶縁膜
102 劣化層
104 絶縁膜
110 絶縁層
120 絶縁層
130 絶縁層
140 絶縁層
150 絶縁層
200 導電パターン
202 酸化層
204 拡散防止膜
206 炭素含有Cu層
210 導電パターン
240 導電パターン
300 CH膜
302 拡散防止膜
310 CH膜
312 拡散防止膜
320 CH膜
322 拡散防止膜
330 CH膜
332 拡散防止膜
340 CH膜
342 拡散防止膜
Claims (12)
- SiOH、SiCOH、又は有機ポリマーからなる絶縁膜に、導電パターンを埋め込む埋込工程と、
前記絶縁膜及び前記導電パターンの表面を、炭化水素ガスを処理ガスに含むプラズマで処理する第1表面処理工程と、
前記処理ガスに、Si含有ガスを徐々に又は段階的に添加量を増大しながら添加してプラズマCVDを行うことにより、前記絶縁膜上及び前記導電パターン上に、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜を形成する膜形成工程と、
を備える半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記絶縁膜は複数の空孔を有するポーラス膜である半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法において、
前記絶縁膜の比誘電率は2.7以下である半導体装置の製造方法。 - 請求項1〜3のいずれか一つに記載の半導体装置の製造方法において、
前記第1表面処理工程において、前記絶縁膜及び前記導電パターンの表面にCH膜又はCHN膜が形成される半導体装置の製造方法。 - 請求項4に記載の半導体装置の製造方法において、
前記膜形成工程において、前記拡散防止膜を前記CH膜又はCHN膜と連続するように形成する半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法において、
前記膜形成工程は、前記第1表面処理工程における前記プラズマを維持したまま前記Si含有ガスの添加を開始することにより行われる半導体装置の製造方法。 - 請求項1〜6のいずれか一つに記載の半導体装置の製造方法において、
前記拡散防止膜は、上に行くに従って、徐々にまたは段階的にSiの濃度が高くなる半導体装置の製造方法。 - 請求項1〜7のいずれか一つに記載の半導体装置の製造方法において、
前記埋込工程と、前記第1表面処理工程の間に、前記絶縁膜及び前記導電パターンの表面を還元プラズマで処理する第2表面処理工程を備える半導体装置の製造方法。 - SiOH、SiCOH、又は有機ポリマーからなる絶縁膜と、
前記絶縁膜に埋め込まれた導電パターンと、
前記絶縁膜上及び前記導電パターン上に位置し、SiCH膜、SiCHN膜、SiCHO膜、またはSiCHON膜からなる拡散防止膜と、
前記絶縁膜及び前記導電パターンと、前記拡散防止膜の間に、CH膜又はCHN膜と、
を備え、
前記拡散防止膜は、前記CH膜又は前記CHN膜と連続するように形成され、
前記拡散防止膜は、上に行くに従って、徐々にまたは段階的にSiの濃度が高くなる半導体装置。 - 請求項9に記載の半導体装置において、
前記絶縁膜は複数の空孔を有するポーラス膜である半導体装置。 - 請求項9または10に記載の半導体装置において、
前記絶縁膜は比誘電率が2.7以下である半導体装置。 - 請求項9〜11のいずれか一つに記載の半導体装置において、
前記導電パターンは、表層にCを含有する半導体装置。
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