JP5126909B2 - 薄膜形成方法及び薄膜形成装置 - Google Patents

薄膜形成方法及び薄膜形成装置 Download PDF

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JP5126909B2
JP5126909B2 JP2010228845A JP2010228845A JP5126909B2 JP 5126909 B2 JP5126909 B2 JP 5126909B2 JP 2010228845 A JP2010228845 A JP 2010228845A JP 2010228845 A JP2010228845 A JP 2010228845A JP 5126909 B2 JP5126909 B2 JP 5126909B2
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film
thin film
target
forming
formation
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Japanese (ja)
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JP2012082463A (ja
Inventor
陽平 日向
旭陽 佐井
芳幸 大瀧
一郎 塩野
友松 姜
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Shincron Co Ltd
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Shincron Co Ltd
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Priority to JP2010228845A priority Critical patent/JP5126909B2/ja
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Priority to US13/704,568 priority patent/US10415135B2/en
Priority to CN201180024261.1A priority patent/CN102892918B/zh
Priority to KR1020127026917A priority patent/KR20130080000A/ko
Priority to EP11830408.8A priority patent/EP2626441A4/fr
Priority to PCT/JP2011/063467 priority patent/WO2012046474A1/fr
Priority to TW100126297A priority patent/TWI486472B/zh
Publication of JP2012082463A publication Critical patent/JP2012082463A/ja
Application granted granted Critical
Publication of JP5126909B2 publication Critical patent/JP5126909B2/ja
Priority to HK13107885.8A priority patent/HK1180734A1/xx
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2010228845A 2010-10-08 2010-10-08 薄膜形成方法及び薄膜形成装置 Active JP5126909B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010228845A JP5126909B2 (ja) 2010-10-08 2010-10-08 薄膜形成方法及び薄膜形成装置
CN201180024261.1A CN102892918B (zh) 2010-10-08 2011-06-13 薄膜形成方法和薄膜形成装置
KR1020127026917A KR20130080000A (ko) 2010-10-08 2011-06-13 박막 형성방법 및 박막 형성장치
EP11830408.8A EP2626441A4 (fr) 2010-10-08 2011-06-13 Procédé de formation de couche mince et dispositif de formation de couche mince
US13/704,568 US10415135B2 (en) 2010-10-08 2011-06-13 Thin film formation method and thin film formation apparatus
PCT/JP2011/063467 WO2012046474A1 (fr) 2010-10-08 2011-06-13 Procédé de formation de couche mince et dispositif de formation de couche mince
TW100126297A TWI486472B (zh) 2010-10-08 2011-07-26 Film forming method and thin film forming apparatus
HK13107885.8A HK1180734A1 (en) 2010-10-08 2013-07-05 Thin-film formation method and thin-film formation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010228845A JP5126909B2 (ja) 2010-10-08 2010-10-08 薄膜形成方法及び薄膜形成装置

Publications (2)

Publication Number Publication Date
JP2012082463A JP2012082463A (ja) 2012-04-26
JP5126909B2 true JP5126909B2 (ja) 2013-01-23

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JP2010228845A Active JP5126909B2 (ja) 2010-10-08 2010-10-08 薄膜形成方法及び薄膜形成装置

Country Status (8)

Country Link
US (1) US10415135B2 (fr)
EP (1) EP2626441A4 (fr)
JP (1) JP5126909B2 (fr)
KR (1) KR20130080000A (fr)
CN (1) CN102892918B (fr)
HK (1) HK1180734A1 (fr)
TW (1) TWI486472B (fr)
WO (1) WO2012046474A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014038090A1 (fr) * 2012-09-10 2014-03-13 株式会社シンクロン Appareil de mesure et appareil de formation de film
KR101947861B1 (ko) * 2012-12-18 2019-02-13 가부시키가이샤 알박 성막 방법 및 성막 장치
KR102169017B1 (ko) 2014-01-10 2020-10-23 삼성디스플레이 주식회사 스퍼터링 장치 및 스퍼터링 방법
WO2015119101A1 (fr) * 2014-02-04 2015-08-13 株式会社アルバック Dispositif de production de film mince, ensemble de masques, et procédé de production de film mince
WO2017110464A1 (fr) * 2015-12-24 2017-06-29 コニカミノルタ株式会社 Appareil de formation de film et procédé de formation de film
JP6951584B2 (ja) * 2019-03-12 2021-10-20 株式会社アルバック 成膜方法
JP6959966B2 (ja) * 2019-09-10 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置および成膜方法
JP2021143364A (ja) * 2020-03-11 2021-09-24 日新電機株式会社 スパッタリング装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
JPH0443906A (ja) * 1990-06-11 1992-02-13 Matsushita Electric Ind Co Ltd 光学的膜厚モニタ装置
JPH08120447A (ja) * 1994-10-24 1996-05-14 Hitachi Metals Ltd スパッタ成膜方法
JP3624476B2 (ja) * 1995-07-17 2005-03-02 セイコーエプソン株式会社 半導体レーザ装置の製造方法
US5911858A (en) * 1997-02-18 1999-06-15 Sandia Corporation Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors
JPH11121444A (ja) * 1997-10-08 1999-04-30 Oki Electric Ind Co Ltd 絶縁膜形成装置および絶縁膜形成方法
JP3306394B2 (ja) 1999-11-02 2002-07-24 株式会社シンクロン 膜厚測定装置および膜厚測定方法
JP3528955B2 (ja) * 1999-12-24 2004-05-24 株式会社ニコン 光学素子の設計方法及び製造方法並びに光学素子
JP3774353B2 (ja) * 2000-02-25 2006-05-10 株式会社シンクロン 金属化合物薄膜の形成方法およびその形成装置
JP2001342563A (ja) * 2000-05-31 2001-12-14 Olympus Optical Co Ltd 光学薄膜の膜厚制御方法及び膜厚制御装置
US6798499B2 (en) * 2001-07-18 2004-09-28 Alps Electric Co., Ltd. Method of forming optical thin films on substrate at high accuracy and apparatus therefor
US7247345B2 (en) 2002-03-25 2007-07-24 Ulvac, Inc. Optical film thickness controlling method and apparatus, dielectric multilayer film and manufacturing apparatus thereof
JP4034979B2 (ja) * 2002-03-25 2008-01-16 株式会社アルバック 光学膜厚制御方法及び光学膜厚制御装置並びに該光学膜厚制御方法を用いて作製した誘電体薄膜
JP4766846B2 (ja) * 2004-07-09 2011-09-07 株式会社シンクロン 薄膜形成方法
JP4806268B2 (ja) * 2006-02-10 2011-11-02 株式会社シンクロン 薄膜形成装置および薄膜形成方法
JP4487264B2 (ja) * 2006-06-26 2010-06-23 旭硝子株式会社 スパッタ装置及びスパッタ成膜方法
DK1970465T3 (da) * 2007-03-13 2013-10-07 Jds Uniphase Corp Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
KR101472865B1 (ko) * 2007-05-15 2014-12-15 도요 알루미늄 가부시키가이샤 탄소피복 알루미늄재 및 그 제조방법
KR101283161B1 (ko) * 2007-09-21 2013-07-05 가부시키가이샤 알박 박막 형성 장치, 막두께 측정 방법, 막두께 센서
JP5078813B2 (ja) * 2008-09-09 2012-11-21 株式会社シンクロン 薄膜形成方法及び薄膜形成装置
JP2010138463A (ja) * 2008-12-12 2010-06-24 K2 Technology Kk 光学薄膜製造方法

Also Published As

Publication number Publication date
WO2012046474A1 (fr) 2012-04-12
TWI486472B (zh) 2015-06-01
CN102892918A (zh) 2013-01-23
EP2626441A4 (fr) 2014-03-26
US10415135B2 (en) 2019-09-17
TW201233833A (en) 2012-08-16
CN102892918B (zh) 2015-05-13
KR20130080000A (ko) 2013-07-11
JP2012082463A (ja) 2012-04-26
EP2626441A1 (fr) 2013-08-14
HK1180734A1 (en) 2013-10-25
US20130081942A1 (en) 2013-04-04

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