DK1970465T3 - Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks - Google Patents

Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks

Info

Publication number
DK1970465T3
DK1970465T3 DK08003989.4T DK08003989T DK1970465T3 DK 1970465 T3 DK1970465 T3 DK 1970465T3 DK 08003989 T DK08003989 T DK 08003989T DK 1970465 T3 DK1970465 T3 DK 1970465T3
Authority
DK
Denmark
Prior art keywords
depositing
mixture
materials
refractive index
layer consisting
Prior art date
Application number
DK08003989.4T
Other languages
English (en)
Inventor
Marius Grigonis
Markus K Tilsch
Joseph Smith
Original Assignee
Jds Uniphase Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jds Uniphase Corp filed Critical Jds Uniphase Corp
Application granted granted Critical
Publication of DK1970465T3 publication Critical patent/DK1970465T3/da

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3492Variation of parameters during sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
DK08003989.4T 2007-03-13 2008-03-04 Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks DK1970465T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89451107P 2007-03-13 2007-03-13

Publications (1)

Publication Number Publication Date
DK1970465T3 true DK1970465T3 (da) 2013-10-07

Family

ID=39514543

Family Applications (1)

Application Number Title Priority Date Filing Date
DK08003989.4T DK1970465T3 (da) 2007-03-13 2008-03-04 Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks

Country Status (7)

Country Link
US (2) US8864958B2 (da)
EP (2) EP1970465B1 (da)
JP (2) JP5349814B2 (da)
KR (2) KR20080084641A (da)
CN (2) CN101265568B (da)
DK (1) DK1970465T3 (da)
TW (2) TWI507556B (da)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7951616B2 (en) * 2006-03-28 2011-05-31 Lam Research Corporation Process for wafer temperature verification in etch tools
US8206996B2 (en) * 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
CN102439196A (zh) * 2009-04-27 2012-05-02 Oc欧瑞康巴尔斯公司 具有多个溅射源的反应溅射
KR20110012182A (ko) * 2009-07-30 2011-02-09 지 . 텍 (주) 연속 스퍼터링을 구현하는 롤투롤 스퍼터 장치 및 연속 스퍼터링 방법
JP5126909B2 (ja) * 2010-10-08 2013-01-23 株式会社シンクロン 薄膜形成方法及び薄膜形成装置
US8760978B2 (en) 2011-12-05 2014-06-24 HGST Netherlands B.V. Magnetic recording head and system having optical waveguide core and/or cladding of an alloyed oxide material
US9814029B2 (en) * 2012-10-05 2017-11-07 Nec Corporation Radio communication system, radio station, radio terminal, network apparatus, bearer control method, and computer readable medium
CN103472514A (zh) * 2013-09-26 2013-12-25 沈阳仪表科学研究院有限公司 一种类皱褶膜系结构的陷波滤光片
CN105154837B (zh) * 2015-10-16 2017-10-27 京东方科技集团股份有限公司 一种溅镀设备的靶材更换装置及溅镀设备
JP6852987B2 (ja) * 2016-06-07 2021-03-31 日東電工株式会社 多層膜の成膜方法
JP6887230B2 (ja) * 2016-08-22 2021-06-16 株式会社アルバック 成膜方法
US10168459B2 (en) * 2016-11-30 2019-01-01 Viavi Solutions Inc. Silicon-germanium based optical filter
WO2018113904A1 (en) * 2016-12-19 2018-06-28 Applied Materials, Inc. Sputter deposition source and method of depositing a layer on a substrate
KR102001028B1 (ko) * 2016-12-23 2019-07-17 엘티메탈 주식회사 스퍼터링 타켓의 속도지수를 이용한 증착속도 예측방법
JP7038394B2 (ja) * 2017-07-25 2022-03-18 株式会社昭和真空 反応性スパッタリングの膜厚制御方法および装置
JP2022511320A (ja) * 2018-09-28 2022-01-31 ヴァイアヴィ・ソリューションズ・インコーポレイテッド 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
CN110735121B (zh) * 2019-11-21 2022-03-29 江苏北方湖光光电有限公司 一种基于磁控溅射的非常规折射率混合薄膜制备方法
CN112063974B (zh) * 2020-08-27 2021-05-04 中国科学院上海光学精密机械研究所 基于类三明治结构界面和复合材料的二向色镜及其制备方法
CN117265510B (zh) * 2023-11-24 2024-02-27 上海星原驰半导体有限公司 原子层沉积方法以及原子层沉积系统

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502562A (en) 1967-04-19 1970-03-24 Corning Glass Works Multiple cathode sputtering fixture
US3962062A (en) * 1974-12-09 1976-06-08 Northern Electric Company Limited Sputtered dielectric thin films
US4166783A (en) 1978-04-17 1979-09-04 Varian Associates, Inc. Deposition rate regulation by computer control of sputtering systems
US4322276A (en) * 1979-06-20 1982-03-30 Deposition Technology, Inc. Method for producing an inhomogeneous film for selective reflection/transmission of solar radiation
US4252626A (en) 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
JPS57145982A (en) 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
CA1193227A (en) 1982-11-18 1985-09-10 Kovilvila Ramachandran Magnetron sputtering apparatus
US4500408A (en) 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
JPS63465A (ja) * 1986-06-18 1988-01-05 Matsushita Electric Ind Co Ltd スパツタ薄膜形成装置
US5225057A (en) 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
DE3825788A1 (de) * 1988-07-29 1990-02-01 Philips Patentverwaltung Verfahren zur herstellung von eisengranatschichten
JPH0288772A (ja) * 1988-09-22 1990-03-28 Hitachi Metals Ltd スパッタ装置の膜厚制御方法
US4957605A (en) 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
JPH0421759A (ja) * 1990-05-14 1992-01-24 Kao Corp 誘電体薄膜形成装置及び誘電体薄膜形成方法
US5174875A (en) 1990-08-29 1992-12-29 Materials Research Corporation Method of enhancing the performance of a magnetron sputtering target
US5525199A (en) * 1991-11-13 1996-06-11 Optical Corporation Of America Low pressure reactive magnetron sputtering apparatus and method
JPH0677301A (ja) * 1992-08-27 1994-03-18 Kawasaki Steel Corp 表面処理装置
US5354575A (en) * 1993-04-16 1994-10-11 University Of Maryland Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers
US5911856A (en) 1993-09-03 1999-06-15 Canon Kabushiki Kaisha Method for forming thin film
US5478455A (en) * 1993-09-17 1995-12-26 Varian Associates, Inc. Method for controlling a collimated sputtering source
EP0665577A1 (en) 1994-01-28 1995-08-02 Applied Materials, Inc. Method and apparatus for monitoring the deposition rate of films during physical vapour deposition
DE19506515C1 (de) * 1995-02-24 1996-03-07 Fraunhofer Ges Forschung Verfahren zur reaktiven Beschichtung
US5665214A (en) * 1995-05-03 1997-09-09 Sony Corporation Automatic film deposition control method and system
US5667919A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Attenuated phase shift mask and method of manufacture thereof
JPH1030178A (ja) * 1996-07-19 1998-02-03 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
GB9703616D0 (en) 1997-02-21 1997-04-09 Univ Paisley Thin films
JPH1129863A (ja) 1997-07-10 1999-02-02 Canon Inc 堆積膜製造方法
JP3782608B2 (ja) 1998-05-22 2006-06-07 キヤノン株式会社 薄膜材料および薄膜作成法
EP0992604B1 (en) 1998-09-28 2008-07-09 Bridgestone Corporation Method for controlling the refractive index of a dry plating film
JP2000144399A (ja) * 1998-10-30 2000-05-26 Applied Materials Inc スパッタリング装置
JP2001003166A (ja) 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
US6746577B1 (en) 1999-12-16 2004-06-08 Agere Systems, Inc. Method and apparatus for thickness control and reproducibility of dielectric film deposition
US6440280B1 (en) 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6554968B1 (en) 2000-09-29 2003-04-29 The Regents Of The University Of California Method for measuring and controlling beam current in ion beam processing
DE60233931D1 (de) * 2001-02-07 2009-11-19 Asahi Glass Co Ltd Verfahren zur herstellung eines sputterfilms
US6736943B1 (en) 2001-03-15 2004-05-18 Cierra Photonics, Inc. Apparatus and method for vacuum coating deposition
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US6723209B2 (en) * 2001-03-16 2004-04-20 4-Wave, Inc. System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicals
EP1254970A1 (de) * 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
US7324865B1 (en) 2001-05-09 2008-01-29 Advanced Micro Devices, Inc. Run-to-run control method for automated control of metal deposition processes
JP2002363745A (ja) * 2001-06-08 2002-12-18 Canon Inc スパッタによる膜の形成方法、光学部材、およびスパッタ装置
JP2003147519A (ja) 2001-11-05 2003-05-21 Anelva Corp スパッタリング装置
JP4458740B2 (ja) * 2002-09-13 2010-04-28 株式会社アルバック バイアススパッタ成膜方法及びバイアススパッタ成膜装置
US20040182701A1 (en) 2003-01-29 2004-09-23 Aashi Glass Company, Limited Sputtering apparatus, a mixed film produced by the sputtering apparatus and a multilayer film including the mixed film
US6878242B2 (en) 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
JP2005284216A (ja) * 2004-03-31 2005-10-13 Shin Etsu Chem Co Ltd 成膜用ターゲット及び位相シフトマスクブランクの製造方法
CA2574581A1 (en) * 2004-07-23 2006-02-09 Polnox Corporation Anti-oxidant macromonomers and polymers and methods of making and using the same
US20060049041A1 (en) 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US7879209B2 (en) 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
GB0421389D0 (en) 2004-09-25 2004-10-27 Applied Multilayers Ltd Material deposition apparatus and method
US7828929B2 (en) 2004-12-30 2010-11-09 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing
DE102005001554A1 (de) * 2005-01-13 2006-07-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erhöhen des Kontaktwinkels für Wasser bei einem optischen Schichtsystem sowie ein optisches Schichtsystem
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
JP2007052305A (ja) 2005-08-19 2007-03-01 Fujinon Sano Kk 反射体、光源装置、液晶プロジェクタ及び反射膜の成膜方法
JP2007154242A (ja) * 2005-12-02 2007-06-21 National Institute For Materials Science 酸化物の混合膜の製造方法
JP5140935B2 (ja) * 2006-03-28 2013-02-13 富士通セミコンダクター株式会社 マグネトロンスパッタ成膜装置、及び半導体装置の製造方法
US20080000768A1 (en) * 2006-06-30 2008-01-03 Stimson Bradley O Electrically Coupled Target Panels

Also Published As

Publication number Publication date
EP1970465A3 (en) 2010-09-22
KR20080084657A (ko) 2008-09-19
JP5349814B2 (ja) 2013-11-20
US20080223716A1 (en) 2008-09-18
EP1970466A2 (en) 2008-09-17
CN101265568B (zh) 2012-07-18
JP5538683B2 (ja) 2014-07-02
CN101265569A (zh) 2008-09-17
JP2008223141A (ja) 2008-09-25
US20080223714A1 (en) 2008-09-18
EP1970466B1 (en) 2020-05-06
EP1970465B1 (en) 2013-08-21
US8658001B2 (en) 2014-02-25
TWI507556B (zh) 2015-11-11
KR20080084641A (ko) 2008-09-19
JP2008223140A (ja) 2008-09-25
CN101265568A (zh) 2008-09-17
US8864958B2 (en) 2014-10-21
EP1970465A2 (en) 2008-09-17
CN101265569B (zh) 2012-05-30
TWI479539B (zh) 2015-04-01
TW200907088A (en) 2009-02-16
TW200845136A (en) 2008-11-16
EP1970466A3 (en) 2017-07-19

Similar Documents

Publication Publication Date Title
DK1970465T3 (da) Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
DK2118031T3 (da) Fremgangsmåde til afsætning af et tyndt lag samt opnået produkt
DK2463116T3 (da) Fremgangsmåde til fremstilling af et panel omfattende et slidbestandigt lag
DK2483214T3 (da) Fremgangsmåde til afsætning af et tyndt lag og produkt omfattende et tyndt lag
WO2008155332A3 (en) A method for providing a plurality of services
DK1802193T3 (da) Fremgangsmåde til frembringelse af en homozygot mus til genetisk modifikation
DK2539505T4 (da) Cellulosefiberbaseret substrat indeholdende et modificeret pva-lag og en fremgangsmåde til dets fremstilling og anvendelse
WO2011050228A3 (en) Gradient low index article and method
EP2291960B8 (en) A method of data delivery across a network
DK2334902T3 (da) Gas, der udvikler olieviskositets formindskende sammensætning, til stimulering af det produktive lag af et oliereservoir
DK2824183T3 (da) Fremgangsmåde til fremstilling af bispecifikke antistoffer
DK2993226T3 (da) Vækstfaktorer til fremstilling af en definitiv endoderm
CL2013003220A1 (es) Metodo y rastreador para distribucion de contenido a traves de una red de distribucion de contenido, que comprende usar el rastreador para coordinar las entidades que forman la infraestructura de dicha red de distribucion de contenido, o cdn, comprendiendo dicho rastreador una capa cdn que comprende interfaces para al menos algunas de dichas entidades cdn y una capa de red para proporcionar servicios de red y comunicacion a dicha capa.
DK2753418T3 (da) Fremgangsmåde til overtrækning af et substrat med et polymerlag
BRPI0812239A2 (pt) Método de produção de artigo de vidro revestido, e produto intermediário usado no mesmo
FR2929938B1 (fr) Procede de depot de couche mince.
DK3178944T3 (da) Fremgangsmåde til anvendelse af genekspression til bestemmelse af sandsynligheden for et klinisk resultat for nyrecancer
DK2736977T3 (da) Lydreducerende fer- og notelement, lydreducerende fremstillingsfremgangsmåde og lydreducerende blanding
DK2084136T3 (da) Benzoylpyrazolforbindelser, fremgangsmåde til fremstilling deraf samt herbicider indeholdende dem
DK2160225T3 (da) Fremgangsmåde til fremstilling af krystaller
DK1976960T3 (da) Fremgangsmåde til fremstilling af biodiesel
FI20100056A0 (fi) Menetelmä ja palvelinjärjestelmä hallittuun verkonvalintaan ja dataliikenteen uudelleenohjaukseen
EP2183429A4 (en) COMPOSITE COMPOSITE FILM FOR ASPHALTING, ASPHALTING METHOD AND METHOD FOR PRODUCING A COMPOSITE COMPOSITE MATERIAL FOR ASPHALTING
BRPI0815622A2 (pt) Métodos, sistemas para produzir um tom de redicagem personalizado, centro de tom de rediscagem personalizado e método para reproduzir um tom de discagem personalizado
DK2441462T3 (da) Fremgangsmåde til behandling af type I-diabetes