WO2014038090A1 - Appareil de mesure et appareil de formation de film - Google Patents

Appareil de mesure et appareil de formation de film Download PDF

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Publication number
WO2014038090A1
WO2014038090A1 PCT/JP2012/073097 JP2012073097W WO2014038090A1 WO 2014038090 A1 WO2014038090 A1 WO 2014038090A1 JP 2012073097 W JP2012073097 W JP 2012073097W WO 2014038090 A1 WO2014038090 A1 WO 2014038090A1
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Prior art keywords
signal
optical
substrate
signals
thin film
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PCT/JP2012/073097
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English (en)
Japanese (ja)
Inventor
旭陽 佐井
陽平 日向
芳幸 大瀧
友松 姜
Original Assignee
株式会社シンクロン
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Application filed by 株式会社シンクロン filed Critical 株式会社シンクロン
Priority to JP2013519298A priority Critical patent/JP5367196B1/ja
Priority to PCT/JP2012/073097 priority patent/WO2014038090A1/fr
Priority to CN201280073844.8A priority patent/CN104350380B/zh
Priority to TW102132518A priority patent/TWI502164B/zh
Publication of WO2014038090A1 publication Critical patent/WO2014038090A1/fr
Priority to HK15102625.2A priority patent/HK1202331A1/xx

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method

Definitions

  • the present invention relates to a measurement apparatus for measuring a characteristic value related to a film thickness and a film forming apparatus equipped with the measurement apparatus, and in particular, a measurement apparatus capable of optical characteristic values and optical thin film values as characteristic values and the measurement apparatus. Relates to the film forming apparatus.
  • an optical thin film product such as a dielectric multilayer filter
  • a measurement apparatus that measures an optical characteristic value or an optical thin film value of a thin film, and a film forming apparatus equipped with the measurement apparatus are already well known.
  • some measuring devices that measure the optical property value of the thin film and the optical thin film value can measure changes in the optical property value of the thin film during film formation in a vacuum container in which the film formation process is performed.
  • Some devices that can perform in-situ measurement For example, when a notch filter or the like is manufactured by a deposition apparatus using vapor deposition, if the refractive index of the vapor deposition material can be measured at the stage of film formation by in-situ measurement, the vapor deposition material can be used efficiently. Therefore, the yield is improved.
  • the structure of the measuring apparatus be simplified.
  • the number of components is increased by using a spectroscope such as a polychromator or a multi-channel analyzer, which is necessary for measuring a spectral spectrum, and the installation space and manufacturing cost are increased. Becomes relatively large.
  • an object of the present invention is to provide a device that realizes faster measurement and obtains a more accurate measurement result as a measurement device that measures at least one of the optical characteristic value and the optical film thickness value of the thin film. Is to provide. Another object of the present invention is to further simplify the configuration of a measuring apparatus that achieves the above object. Furthermore, another object of the present invention is to provide a film forming apparatus capable of performing in-situ measurement by a measuring apparatus after eliminating the influence of stray light from an electron beam or plasma during the film forming process. It is.
  • the subject is a measuring apparatus for measuring optical characteristic values including an optical film thickness value for a thin film formed on a substrate to be measured, and generates monochromatic light using an optical filter.
  • An optical signal generation mechanism that emits a plurality of optical signals by modulating monochromatic light generated by each of the plurality of light source units to different set frequencies for each light source unit, and the optical signal generation mechanism
  • An optical mechanism that multiplexes the plurality of optical signals emitted from the optical signal to generate a multiplexed signal, and irradiates the multiplexed signal toward the substrate to be measured through an optical fiber;
  • a detection mechanism that outputs an electric signal as a detection signal when the multiplexed signal reflected by the measurement substrate or transmitted through the measurement substrate is received through an optical fiber; and the detection
  • the component signal for each set frequency corresponding to each of the plurality of optical signals is separated and extracted from the electrical signal by performing a filtering process using a band pass filter on the electrical signal output by the structure.
  • a signal separation mechanism and
  • the subject is a measuring apparatus that simultaneously measures a plurality of optical characteristic values including an optical film thickness value for a thin film formed on a substrate to be measured.
  • An optical signal generating mechanism that includes a plurality of light source units that generate monochromatic light using the single light generated by each of the plurality of light source units and modulates the light source units to different set frequencies for each light source unit.
  • An irradiation mechanism that multiplexes the plurality of optical signals emitted from the optical signal generation mechanism to generate a multiplexed signal, and irradiates the multiplexed signal toward the substrate to be measured through an optical fiber;
  • an electrical signal is output as a detection signal.
  • a detection mechanism a signal separation mechanism that separates component signals for each set frequency corresponding to each of the plurality of optical signals from the electrical signal output from the detection mechanism, and a separation from the electrical signal by the signal separation mechanism
  • a plurality of optical characteristic values are simultaneously measured by including a calculation mechanism for calculating the optical characteristic value indicated by the component signal for each of the set frequencies based on the component signal for each of the set frequencies.
  • the signal separation mechanism includes a lock-in amplifier that detects and amplifies a signal of a specific frequency, and the electric signal output from the detection mechanism is input to the lock-in amplifier, whereby the electric signal
  • the problem is solved by extracting and amplifying the component signal for each set frequency corresponding to each of a plurality of optical signals.
  • any one of the above two measurement devices can realize high-speed and high-precision measurement by the frequency multiplexing technique. That is, with the measurement apparatus of the present invention, it is possible to acquire a plurality of pieces of information, more specifically, the number of measurement results corresponding to the type of set frequency at a time. As a result of obtaining a plurality of measurement results at once by the measurement apparatus of the present invention, the measurement accuracy is improved as compared with the conventional measurement method using only the optical signal set to a single frequency, and the measurement speed Also get faster about. More specifically, the measurement apparatus of the present invention simultaneously irradiates the optical signals of the respective channels corresponding to the set frequency.
  • the film thickness of the thin film to be measured changes, the light intensity after transmission or reflection of the optical signal of each channel changes, but the change must be specified for each channel.
  • the optical characteristic value of the thin film can be simultaneously obtained for each channel. This makes it possible to acquire optical characteristic values with high accuracy and instantaneously at each channel, in other words, at each set frequency.
  • Such an effect cannot be achieved with a spectrophotometer combining a spectroscope with a CMOS or CCD sensor. This is because spectrophotometers can acquire optical characteristic values at high speed, but there are a lot of measurement errors due to noises inherent in the circuits in CMOS and CCD sensors. Because it ends up.
  • both of the above-described two measuring apparatuses according to the present invention can obtain a plurality of optical characteristic values at a high speed in the same manner as the spectrophotometer, and more accurately measure than the spectrophotometer. Can be achieved. Furthermore, in either of the above-described two measuring apparatuses, it is not necessary to use a spectroscope when dividing the multiplexed signal, so that the structure of the measuring apparatus is simplified correspondingly.
  • a digital signal processor that performs amplification processing on each of the frequency component signals for each set frequency separated from the detection signal is further provided, and the calculation mechanism includes The optical characteristic value indicated by the component signal may be calculated based on the component signal after the amplification process. If it is the above structure, since the component signal after an amplification process is used as a signal used for the calculation process by a calculation mechanism, a more exact calculation result will be obtained. That is, if it is said structure, a more exact result will be obtained as a measurement result by a measuring apparatus.
  • the above-mentioned problem is a film forming apparatus comprising: a vacuum container that accommodates a substrate; and a vapor deposition mechanism that deposits a vapor deposition material on the substrate using an electron beam or plasma in the vacuum container,
  • the measurement apparatus according to any one of 2 to 4, and while the thin film is formed on the substrate in the vacuum vessel, while the thin film is formed on the substrate in the vacuum vessel,
  • the substrate to be measured is accommodated in the vacuum vessel, the vapor deposition mechanism deposits the vapor deposition material on the substrate to be measured, and the measuring apparatus has a thin film on the substrate in the vacuum vessel.
  • a plurality of optical characteristic values including an optical film thickness value are simultaneously applied to the thin film formed on the substrate to be measured while the substrate to be measured is housed in the vacuum vessel while being formed. Measurement It is solved by Rukoto.
  • the measurement apparatus since high-speed and high-precision measurement is realized by the frequency multiplexing technique, a plurality of optical characteristic values are acquired at high speed in the same manner as the spectrophotometer, and the spectroscopic Compared to a spectrometer, it is possible to realize measurement with higher accuracy.
  • the spectroscope since the spectroscope is not used, the configuration of the measuring apparatus is simplified. If it is the measuring apparatus of Claim 3, a more exact result will be obtained as a measurement result by a measuring apparatus.
  • in-situ measurement can be performed without being affected by stray light emitted from an electron beam or plasma during the film forming process.
  • FIG. 1 is a diagram showing a schematic configuration of a film forming apparatus according to this embodiment.
  • FIG. 2 is a schematic diagram illustrating the configuration of the optical signal generation mechanism and the irradiation mechanism according to the present embodiment.
  • FIG. 3 is a conceptual diagram showing a measurement method according to the present embodiment.
  • FIG. 4 is a schematic diagram illustrating a detection mechanism and a signal separation mechanism according to the first example of the present embodiment.
  • FIG. 5 is a schematic diagram illustrating a detection mechanism and a signal separation mechanism according to the second example of the present embodiment.
  • the film forming apparatus is an apparatus that forms a thin film by depositing a deposition material on the surface of a substrate in the vacuum vessel 1.
  • a vapor deposition apparatus 100 that forms a film using a vapor deposition material evaporated by irradiation with the electron beam EB will be described as an example.
  • the present invention is not limited to this, and a film forming apparatus to which the present invention can be applied is a plasma CVD (chemical vapor deposition) method, that is, an apparatus for forming a film by a method of depositing a deposition material on a substrate using plasma.
  • An apparatus for forming a film by sputtering or ion plating for forming a film by colliding ions with a target is conceivable.
  • a substrate hereinafter referred to as an actual substrate S
  • a monitor substrate Sm for film thickness measurement are set in the vacuum vessel 1 and are formed on the monitor substrate Sm side during the film forming process. It is possible to appropriately adjust the film forming conditions while monitoring the film quality of the thin film.
  • a thin film is also formed on the monitor substrate S under the same conditions as the actual substrate S during the film forming process for forming the thin film on the actual substrate S. That is, in the present embodiment, the film quality of the thin film formed on the actual substrate S side and the film quality of the thin film formed on the monitor substrate Sm side are identified and the film quality of the thin film on the monitor substrate Sm side is monitored. The film quality of the thin film on the actual substrate S side is managed.
  • the actual substrate S is a substrate that is actually used as an optical thin film product.
  • the monitor substrate Sm corresponds to the substrate to be measured, and is used for monitoring the film quality as described above.
  • the film quality is an index relating to the optical characteristics of the thin film, that is, the optical characteristic value of the thin film.
  • the optical characteristic value is a concept including the optical film thickness value.
  • the optical characteristic value includes the reflectance, transmittance, refractive index, and absorptance of a thin film (more strictly, a vapor deposition material constituting the thin film).
  • the configuration of the vapor deposition apparatus 100 will be described. As shown in FIG. 1, the vacuum container 1, the substrate holder 2, the vapor deposition mechanism 5, and the measurement apparatus 101 are provided as main components. About each component of the vapor deposition apparatus 100, except the measuring apparatus 101, it is substantially the same as what was mounted in the apparatus well-known as a film deposition apparatus of a vacuum vapor deposition system.
  • a dome-shaped substrate holder 2 is arranged in the upper part of the inner space of the hollow vacuum vessel 1, and a plurality of actual substrates S are attached to the inner surface of the substrate holder 2.
  • an opening is formed at the center of the substrate holder 2, and one monitor substrate Sm is set immediately below the opening. Further, for the purpose of uniformizing the film formation amount between the actual substrates S, the substrate holder 2 rotates around the rotation axis along the vertical direction during the film formation process.
  • a vapor deposition mechanism 5 is disposed in the lower part of the inner space of the vacuum vessel 1.
  • the vapor deposition mechanism 5 deposits a vapor deposition material on the actual substrate S using the electron beam EB in the vacuum chamber 1 during the film forming process.
  • the vapor deposition mechanism 5 includes a crucible 3 in which a vapor deposition material is accommodated and an electron gun 4 that irradiates an electron beam EB, and the electron beam from the electron gun 4 is applied to the vapor deposition material in the crucible 3.
  • EB is irradiated to evaporate the deposition material.
  • a film forming process for forming a thin film on the actual substrate S is performed by the vapor deposition apparatus 100 having the above configuration. Further, as described above, while the thin film is formed on the actual substrate S in the vacuum vessel 1, the monitor substrate Sm is accommodated in the vacuum vessel 1, and the vapor deposition mechanism 5 is also deposited on the monitor substrate Sm. Is vapor-deposited. That is, in the present embodiment, in the film forming process, substantially the same thin film is formed on both the actual substrate S and the monitor substrate Sm.
  • the controller 90 outputs a control signal to the device to be controlled. Then, as a result of the control target device receiving the control signal output from the controller 90 and operating in accordance with the signal, the film forming conditions are adjusted.
  • the measuring apparatus 101 measures a value including at least one of the optical characteristic value and the optical film thickness value of the thin film formed on the monitor substrate Sm.
  • the measurement apparatus 101 which measures both the refractive index and optical film thickness value as an optical characteristic value is mentioned as an example, and is demonstrated.
  • the present invention is not limited to this, and an apparatus that measures an optical characteristic value other than the refractive index, or an apparatus that measures only one of the optical characteristic value and the optical film thickness value may be used.
  • the measuring device 101 makes light incident on the thin film formed on the monitor substrate Sm in order to measure the refractive index and the optical film thickness value. This light corresponds to measurement light and is reflected by the monitor substrate Sm or passes through the monitor substrate Sm, and the reflected light and transmitted light are received by the detection mechanism 30 described later.
  • the measuring apparatus 101 calculates the refractive index and optical film thickness value of the thin film as values indicated by the detection signal based on the detection signal output when the detection mechanism 30 receives the reflected light or transmitted light. To do.
  • the measuring apparatus 101 includes an optical signal generation mechanism 10, an irradiation mechanism 20, a detection mechanism 30, a signal separation mechanism 50, and a digital signal processor 70 (FIG. 1). 4 and 5) and a calculation mechanism 80 as main components.
  • an optical signal generation mechanism 10 an irradiation mechanism 20, a detection mechanism 30, a signal separation mechanism 50, and a digital signal processor 70 (FIG. 1). 4 and 5) and a calculation mechanism 80 as main components.
  • FIG. 1 the measuring apparatus 101 includes an optical signal generation mechanism 10, an irradiation mechanism 20, a detection mechanism 30, a signal separation mechanism 50, and a digital signal processor 70 (FIG. 1). 4 and 5) and a calculation mechanism 80 as main components.
  • each component of the measuring apparatus 101 will be described.
  • the optical signal generation mechanism 10 has a light source, and guides an optical signal emitted from the light source to the irradiation mechanism 20 by an optical component such as a condenser lens.
  • the optical signal generation mechanism 10 according to the present embodiment includes a plurality of light sources, modulates the light emitted from each light source to a predetermined frequency, and guides the modulated light to the irradiation mechanism 20 as an optical signal.
  • the frequency of the optical signal generated by the optical signal generating mechanism 10 that is, the frequency after modulation is set to be different for each light source. That is, the optical signal generation mechanism 10 according to the present embodiment emits a plurality of optical signals modulated to different set frequencies.
  • the optical signal generation mechanism 10 includes a plurality of LED units as light source units mounted on a projector.
  • six LED units are provided.
  • the number of LED units it is not limited to said number, If it is at least 2 or more, it can be set to arbitrary numbers.
  • each of the six LED units is referred to as a first LED unit 11a, a second LED unit 11b, a third LED unit 11c, a fourth LED unit 11d, a fifth LED unit 11e, and a sixth LED unit 11f.
  • Each of the first LED unit 11a to the sixth LED unit 11f includes a white LED or an RGB single color LED, a constant current driver for supplying a constant current to the LED, a collimator lens that adjusts to parallel light, an optical filter, and a light collecting unit. Provide a lens.
  • a light source of each LED unit 11a to 11f an LED having an output wavelength characteristic in which a peak of output power appears in a predetermined wavelength region is used. For the convenience of illustration, these components are not shown.
  • the LED units 11a to 11f generate monochromatic light using an optical filter.
  • a dichroic filter as a first optical filter between the LED and the condenser lens has a mirror surface inclined by about 45 degrees with respect to the optical axis of the LED.
  • a band pass filter as a second optical filter is disposed between the LED and the dichroic filter, more specifically, downstream of the collimator lens and upstream of the dichroic filter.
  • the second optical filter is configured to have a light output spectral distribution in which light emitted to the first optical filter located on the downstream side has a half width of 20 nm (preferably 15 nm) or less. It is desirable to do. Thereby, the output light with a narrow wavelength band can be emitted by the condenser lens, which can contribute to the improvement of the optical film thickness measurement system.
  • a pulse drive system for the transmission of the optical signal from each LED unit 11a to 11f, a pulse drive system is employed in which the optical signal is emitted at a divided frequency obtained by dividing the frequency of an accurate crystal oscillator.
  • the optical signal emitted from each LED unit is modulated, and the frequency of the modulated optical signal (hereinafter also referred to as a modulated optical signal) is 1310 Hz for the first LED unit 11a, 1092Hz for the second LED unit 11b,
  • the 3LED unit 11c has a frequency of 867 Hz
  • the fourth LED unit 11d has a frequency of 678 Hz
  • the fifth LED unit 11e has a frequency of 437 Hz
  • the sixth LED unit 11f has a frequency of 218 Hz.
  • the optical signal modulation method is not limited to the above-described content.
  • a known modulation method such as a digital direct synthesis oscillator (Direct Digital Synthesizer) is used. , DDS) may be used for modulation.
  • the frequency of each modulated optical signal is not limited to the above set value, and may be set to a value other than the above value as long as the value is set so that measurement can be suitably performed. It is good.
  • the irradiation mechanism 20 multiplexes the five types of modulated optical signals emitted from the optical signal generation mechanism 10 to generate a multiplexed signal. Then, the irradiation mechanism 20 irradiates the multiplexed signal toward the monitor substrate Sm through the optical fiber LF. That is, in this embodiment, the five types of modulated signals are not individually irradiated onto the monitor substrate Sm, but as shown in FIG. 3, the five types of modulated signals (f1, f2, f3, and f4 in the figure). , F5, f6)) and irradiate the monitor substrate Sm as one signal. For this reason, it is not necessary to provide the optical fiber LF forming the transmission path for each signal after modulation, and only one optical fiber LF for transmitting the multiplexed signal needs to be provided as shown in FIG. become.
  • the irradiation mechanism 20 having the above functions is mounted on the projector together with the optical signal generation mechanism 10, that is, the six LED units 11a to 11f.
  • the irradiation mechanism 20 includes a plurality of dichroic mirrors 21 and a condenser lens 22 as main components.
  • each dichroic mirror 21 includes a second LED unit 11b to a sixth LED unit 11f as shown in FIG. It arrange
  • the number of dichroic mirrors 21 is not limited to the above number (5), but the number according to the number of LED units, particularly one less than the number of LEDs as in this embodiment. It is desirable to be a number.
  • the five dichroic mirrors 21 are arranged in a straight line along the optical path toward the condenser lens 22. Each dichroic mirror 21 is arranged in a state inclined by 45 degrees with respect to the optical path of the modulated optical signal emitted from the corresponding LED unit.
  • the first LED unit 11a is arranged so as to be aligned with the five dichroic mirrors 21. More specifically, the first LED unit 11a is arranged so as to be located upstream from the dichroic mirror 21 located most upstream in the optical path. Is done.
  • each dichroic mirror 21 has a property of passing only light of a predetermined wavelength (in other words, predetermined frequency) and reflecting light of other wavelengths.
  • predetermined frequency in other words, predetermined frequency
  • the transmission bands of the five dichroic mirrors 21 arranged in a straight line are set to 620 to 780 nm, 580 to 780 nm, 540 to 780 nm, 500 to 780 nm, and 440 to 780 nm in order from the upstream side. .
  • the dichroic mirror 21 corresponding to the second LED unit 11b reflects light that is not in the transmission band (580 to 780 nm). Of the reflected light, only the optical signal having a wavelength of 600 nm passes through the remaining dichroic mirror 21.
  • the modulated optical signals emitted from each of the first LED unit 11a and the second LED unit 11b are combined by the dichroic mirror 21 by the above operation.
  • the signal with a wavelength of 560 nm is transmitted for the modulated optical signal from the third LED unit 11c, and only the signal with a wavelength of 520 nm is transmitted for the modulated optical signal from the fourth LED unit 11d.
  • the modulated optical signal from the 5LED unit 11e only a signal with a wavelength of 480 nm is transmitted, and as for the modulated optical signal from the sixth LED unit 11f, only a signal with a wavelength of 440 nm is transmitted.
  • the transmitted light that has passed through the dichroic mirror 21 is combined to generate a multiplexed signal in which five types of modulated optical signals are multiplexed.
  • the multiplexed signal is focused by the condenser lens 23 and then irradiated toward the monitor substrate Sm through the optical fiber.
  • the optical signal is multiplexed using the dichroic mirror 21, but the present invention is not limited to this.
  • the method for multiplexing optical signals may be a method known as a method other than the method using the dichroic mirror 21, for example, a method using an optical multiplexer or a dielectric multilayer filter.
  • the detection mechanism 30 detects a multiplexed signal reflected by the monitor substrate Sm after being irradiated by the irradiation mechanism 20 or transmitted through the monitor substrate Sm through an optical fiber, and outputs a detection signal.
  • the detection mechanism 30 according to the present embodiment includes a photoelectric conversion element, receives a multiplexed signal reflected by the monitor substrate Sm after being irradiated by the irradiation mechanism 20, and outputs an electrical signal as a detection signal. To do.
  • the signal separation mechanism 50 separates the component signal for each set frequency corresponding to each modulated optical signal from the electrical signal output from the detection mechanism 30.
  • the number of component signals is the same as that of the modulated optical signal, that is, five types, and corresponds to the frequency of the modulated optical signal as shown in FIG.
  • the electrical signal is output when the detection mechanism 30 receives the multiplexed signal reflected by the monitor substrate Sm, and reflects each of the multiplexed modulated optical signals. It can be said that the electrical signals output from the detection mechanism 30 when light is individually received are combined. Then, the signal separation mechanism 50 extracts and separates the component signal having the same frequency as the frequency of the modulated optical signal emitted from each LED unit from the electrical signal output from the detection mechanism 30. That is, each component signal separated by the signal separation mechanism 50 can be regarded as an electrical signal output from the detection mechanism 30 when each reflected light of the multiplexed modulated optical signal is individually received.
  • the frequency of each modulated optical signal is expressed as n1 to n6, the component signal is expressed as g1 to g6, and the frequency corresponding to the component signal is expressed in parentheses.
  • the component signal g1 corresponds to the frequency n1 of the modulated optical signal f1 emitted from the first LED unit 11a, and the frequency n3 of the modulated optical signal f3 emitted from the third LED unit 11c.
  • Component signal g3 corresponds.
  • the frequency division division technique is employed, thereby realizing high-speed and high-precision measurement. That is, in the present embodiment, the same number of electric signals as the set frequency type that is the frequency of the modulated optical signal can be simultaneously acquired in the form of component signals. For this reason, it is possible to simultaneously acquire the measurement results for the monitor substrates Sm as many as the values indicated by the component signals, that is, the same number as the component signals (in other words, the number corresponding to the type of the set frequency). As a result, in this embodiment, the measurement accuracy is improved as compared with the conventional measurement method, and the measurement speed is also increased.
  • the above-described effect by the measuring apparatus 101 according to the present embodiment cannot be achieved by a spectrophotometer in which a spectroscope is combined with a CMOS or a CCD sensor. This is because, in the case of a spectrophotometer, noise inherent to a circuit in a CMOS or CCD sensor is generated or a measurement error is generated due to plasma light or stray light generated in the vacuum chamber 1. . On the other hand, in the measuring apparatus 101 according to the present embodiment, it is possible to eliminate the above error factors and achieve high-speed and high-accuracy measurement.
  • the value which each component signal shows is the refractive index and optical thin film value of the vapor deposition material which comprises a thin film, and can each be acquired for every setting frequency.
  • the optical thin film values for each set frequency are represented by symbols d1 to d6, and the refractive indexes for each set frequency are represented by symbols s1 to s6.
  • the detection mechanism 30 according to the present embodiment is configured by a photosensor amplifier 31 (denoted as PSA in the drawings) illustrated in FIGS.
  • the photosensor amplifier 31 has a built-in photodiode as a photoelectric conversion element, converts a photocurrent generated when the photodiode receives light into a voltage, and outputs a voltage signal. That is, the detection mechanism 30 according to the present embodiment performs I / V conversion after receiving the multiplexed signal with the photodiode, and outputs an electrical signal, more specifically, a voltage signal as the detection signal.
  • the signal separation mechanism 50 amplifies the electrical signal output from the detection mechanism 30 by the preamplifier 51, and performs a filtering process on the electrical signal after the amplification process. With this procedure, the signal separation mechanism 50 extracts a component signal for each set frequency from the electrical signal.
  • the filter 52 used in the filter process is an analog filter, and more specifically, a bandpass filter that passes a plurality of channels. That is, in this embodiment, the center frequency of each transmission band of the bandpass filter is set to the same frequency as the set frequency, and specifically, set to 1310HZ, 1092Hz, 867Hz, 678Hz, 437Hz, and 218Hz. .
  • a filter is used to separate a component signal for each set frequency from a multiplexed signal, more specifically, an electrical signal. That is, in this embodiment, it is not necessary to use a spectroscope when dividing the multiplexed signal, so that the apparatus configuration is simplified correspondingly.
  • the separated component signals for each set frequency are converted into digital signals by the A / D converter 53 and then delivered to the digital signal processor 70.
  • the band pass filter is used as the filter 52, but the present invention is not limited to this, and an analog filter other than the band pass filter, that is, a high pass filter or a low pass filter may be combined. Good.
  • an analog filter is used as the filter 52.
  • an FIR filter finite impulse response filter
  • a digital filter whose center frequency is the same as the set frequency, specifically, 1310HZ, 1092Hz, 867Hz, 678Hz, 437Hz, 218Hz, is used, the component for each set frequency from the electrical signal output by the detection mechanism 30 It is possible to separate the signals.
  • the FIR filter is used as the digital filter, the number of taps is set to 175 to 512.
  • the configuration of the signal separation mechanism 50 according to the present embodiment can be considered in addition to the configuration described above, that is, the configuration in which the component signal is separated using the filter 52.
  • the configuration shown in FIG. 5 inputs the electrical signal output from the detection mechanism 30 to a lock-in amplifier 60 as a main amplifier.
  • the lock-in amplifier 60 has a function of detecting and amplifying a signal having a specific frequency among the input signals.
  • the lock-in amplifier 60 has the same number of channels as the type of set frequency. Therefore, the signal separation mechanism 50 illustrated in FIG. 5 extracts and amplifies the component signal for each set frequency from the electrical signal when the electrical signal output from the detection mechanism 30 is input to the lock-in amplifier 60. .
  • the lock-in amplifier 60 will be described in more detail.
  • the electrical signal output from the detection mechanism 50 is input to the lock-in amplifier 60.
  • a reference signal set to the same frequency as the set frequency is input from the reference signal generation device 67 to the lock-in amplifier 60.
  • the lock-in amplifier 60 includes a preamplifier 61 that amplifies an input electric signal, specifically, a voltage signal, and a filter 62 that removes harmonics and aliasing signals included in the electric signal.
  • the filter 62 for example, a band pass filter or an anti-alias filter can be used.
  • the lock-in amplifier 60 includes a synchronous detection circuit 63 that performs frequency conversion by synchronous detection, and a low-pass filter 64 that removes an alternating current component from the output signal of the synchronous detection circuit 63 and extracts a direct current component (denoted as LPF in FIG. 5). ).
  • the lock-in amplifier 60 can extract and amplify a component signal for each set frequency from the electrical signal using the input electrical signal and reference signal. That is, the center frequency of the lock-in amplifier 60 is set to the same frequency as the set frequency, and specifically, is set to 1310 HZ, 1092 Hz, 867 Hz, 678 Hz, 437 Hz, and 218 Hz.
  • the apparatus configuration is simplified correspondingly.
  • the separated component signals for each set frequency are converted into digital signals by the A / D converter 53 and then delivered to the digital signal processor 70.
  • an analog lock-in amplifier, a digital lock-in amplifier, a digital lock-in amplifier constituted by a digital signal processor or a personal computer can be used.
  • the digital signal processor 70 performs digital signal processing for amplifying a signal, that is, amplification processing, on each component signal for each set frequency separated by the signal separation mechanism 50. Then, the digital signal processor 70 passes the amplified component signal to the calculation mechanism 80.
  • the calculation mechanism 80 calculates the value indicated by each component signal for each set frequency based on the component signal for each set frequency separated by the signal separation mechanism 50.
  • the calculation mechanism 80 according to the present embodiment calculates a value indicated by the component signal based on the component signal after being amplified by the digital signal processor 70.
  • a more accurate calculation result can be obtained by using the amplified component signal as a signal used for the calculation process by the calculation mechanism 80. That is, in this embodiment, a more accurate result can be obtained as a measurement result by the measuring apparatus 101.
  • the calculation mechanism 80 is configured by a computer, and analyzes the component signal by executing predetermined arithmetic processing on the component signal that is a digital signal. By this analysis, the value indicated by the component signal, specifically, the refractive index of the thin film formed on the monitor substrate Sm (strictly, the refractive index of the vapor deposition material constituting the thin film) and the optical thin film value are acquired.
  • the above analysis is performed for each component signal, in other words, for each set frequency. Therefore, in the present embodiment, the refractive index and the optical thin film value of the thin film are specified for each set frequency.
  • the reflectivity when an optical signal is applied to the substrate during film formation changes according to the optical film thickness. Further, it is known that the shape of the curve indicating the correlation between the optical film thickness and the reflectance changes according to the frequency (wavelength) of the irradiated optical signal. Using this property, in this embodiment, it is possible to calculate the optical film thickness for each set frequency by using optical signals modulated to a plurality of different frequencies.
  • the calculation mechanism 80 transmits data indicating the refractive index of the thin film and the optical thin film value as a calculation result to the controller 90.
  • the controller 90 that has received such data can adjust the film forming conditions in accordance with the refractive index and optical thin film value of the thin film specified from the data.
  • the thin film formed on the monitor substrate Sm in the vacuum vessel 1 is monitored while the film forming process is being performed. Is possible. That is, by using the measuring apparatus 101 according to the present embodiment, the monitor substrate Sm is housed in the vacuum vessel 1 while the thin film is formed on the actual substrate S in the vacuum vessel 1. It is possible to perform in-situ measurement of the refractive index and the optical thin film value of the thin film formed on the substrate Sm.
  • the reason why in-situ measurement is possible in the present embodiment will be described.
  • the deposition material is deposited on the actual substrate S using the electron beam EB or plasma
  • the influence of the stray light emitted from the electron beam EB or plasma is reduced by the thin film. This may affect the measurement results regarding the refractive index and the optical film thickness.
  • the component corresponding to the stray light is cut from the electric signal output from the detection mechanism 30 by the functions of the filter 52 such as the bandpass filter and the lock-in amplifier 60 described above. It becomes possible. This makes it possible to perform in-situ measurement without being affected by the electron beam EB or plasma stray light even during the film forming process.
  • the present embodiment is merely an example for facilitating the understanding of the present invention, and the above-described members, arrangements, and the like are described in the present invention.
  • the present invention is not limited, and various modifications and improvements can be made in accordance with the spirit of the present invention, and of course, the present invention includes equivalents thereof.
  • the contents described above as the size, dimension, shape, and material of each device constituting the measuring device are merely examples for demonstrating the effects of the present invention, and do not limit the present invention.

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Abstract

L'invention concerne un appareil de mesure destiné à mesurer des valeurs de caractéristiques optiques et / ou une valeur d'épaisseur de film optique d'un film mince, au moyen duquel une mesure à plus grande vitesse est réalisée et des résultats de mesure plus précis peuvent être obtenus. Un appareil (101) de mesure, destiné à mesurer des valeurs comprenant des valeurs de caractéristiques optiques et / ou une valeur d'épaisseur de film optique d'un film mince formé sur un substrat (Sm) d'écran, comporte : un mécanisme (10) de génération de signaux optiques, qui génère une pluralité de signaux optiques en modulant une lumière monochromatique de telle façon qu'elle se situe à des fréquences définies différentes les unes des autres par chaque unité de source lumineuse, ladite lumière monochromatique ayant été générée au moyen d'une pluralité d'unités (11a-11f) de DEL à l'aide d'un filtre optique ; un mécanisme (20) d'irradiation qui génère des signaux multiplexés en multiplexant les signaux optiques et qui rayonne les signaux multiplexés en direction du substrat (Sm) d'écran à travers une fibre optique ; un mécanisme (30) de détection qui détecte les signaux multiplexés à travers la fibre optique, lesdits signaux multiplexés ayant été réfléchis au moyen du substrat (Sm) d'écran, et qui émet des signaux électriques ; un mécanisme (50) de séparation de signaux qui effectue le traitement de filtrage d'un filtre passe-bande par rapport aux signaux électriques émis à partir du mécanisme (30) de détection et qui sépare les signaux constitutifs suivant chaque fréquence définie à partir des signaux électriques ; et un mécanisme (80) de calcul qui calcule, sur la base des signaux constitutifs ainsi séparés suivant chaque fréquence définie, les valeurs de caractéristiques optiques suivant chaque fréquence définie, lesdites valeurs de caractéristiques optiques étant indiquées par les signaux constitutifs. L'appareil de mesure réalise une mesure des valeurs de caractéristiques optiques à un seul instant.
PCT/JP2012/073097 2012-09-10 2012-09-10 Appareil de mesure et appareil de formation de film WO2014038090A1 (fr)

Priority Applications (5)

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JP2013519298A JP5367196B1 (ja) 2012-09-10 2012-09-10 測定装置及び成膜装置
PCT/JP2012/073097 WO2014038090A1 (fr) 2012-09-10 2012-09-10 Appareil de mesure et appareil de formation de film
CN201280073844.8A CN104350380B (zh) 2012-09-10 2012-09-10 测量装置和成膜装置
TW102132518A TWI502164B (zh) 2012-09-10 2013-09-10 A measuring device and a film forming device
HK15102625.2A HK1202331A1 (en) 2012-09-10 2015-03-16 Measuring apparatus and film-forming apparatus

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PCT/JP2012/073097 WO2014038090A1 (fr) 2012-09-10 2012-09-10 Appareil de mesure et appareil de formation de film

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WO2018236287A1 (fr) * 2017-06-22 2018-12-27 Ams Sensors Singapore Pte. Ltd. Modules de spectromètre compacts
CN109811323B (zh) * 2019-01-23 2023-09-08 北京北方华创微电子装备有限公司 一种磁控溅射装置和托盘检测方法

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CN104350380A (zh) 2015-02-11
HK1202331A1 (en) 2015-09-25
JPWO2014038090A1 (ja) 2016-08-08
TW201411090A (zh) 2014-03-16
TWI502164B (zh) 2015-10-01
CN104350380B (zh) 2017-03-15

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