JP5103861B2 - 半導体装置、半導体装置の製造方法、回路基板および電子機器 - Google Patents
半導体装置、半導体装置の製造方法、回路基板および電子機器 Download PDFInfo
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- JP5103861B2 JP5103861B2 JP2006280113A JP2006280113A JP5103861B2 JP 5103861 B2 JP5103861 B2 JP 5103861B2 JP 2006280113 A JP2006280113 A JP 2006280113A JP 2006280113 A JP2006280113 A JP 2006280113A JP 5103861 B2 JP5103861 B2 JP 5103861B2
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- insulating film
- electrode
- semiconductor device
- substrate
- electrode pad
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
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- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006280113A JP5103861B2 (ja) | 2006-10-13 | 2006-10-13 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006280113A JP5103861B2 (ja) | 2006-10-13 | 2006-10-13 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008098498A JP2008098498A (ja) | 2008-04-24 |
JP2008098498A5 JP2008098498A5 (enrdf_load_stackoverflow) | 2009-11-19 |
JP5103861B2 true JP5103861B2 (ja) | 2012-12-19 |
Family
ID=39381010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006280113A Active JP5103861B2 (ja) | 2006-10-13 | 2006-10-13 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5103861B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5539624B2 (ja) * | 2008-04-28 | 2014-07-02 | ラピスセミコンダクタ株式会社 | 薄膜抵抗素子、及び薄膜抵抗素子の製造方法 |
US7786600B2 (en) * | 2008-06-30 | 2010-08-31 | Hynix Semiconductor Inc. | Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire |
EP2463896B1 (en) * | 2010-12-07 | 2020-04-15 | IMEC vzw | Method for forming through-substrate vias surrounded by isolation trenches with an airgap and corresponding device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3983996B2 (ja) * | 2001-04-23 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP2004095849A (ja) * | 2002-08-30 | 2004-03-25 | Fujikura Ltd | 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法 |
JP2005093486A (ja) * | 2003-09-12 | 2005-04-07 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP3821125B2 (ja) * | 2003-12-18 | 2006-09-13 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、回路基板、電子機器 |
JP4873517B2 (ja) * | 2004-10-28 | 2012-02-08 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
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2006
- 2006-10-13 JP JP2006280113A patent/JP5103861B2/ja active Active
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JP2008098498A (ja) | 2008-04-24 |
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