JP5099151B2 - 弾性境界波装置の製造方法 - Google Patents
弾性境界波装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims description 37
- 238000010897 surface acoustic wave method Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 88
- 229910004298 SiO 2 Inorganic materials 0.000 description 46
- 239000000758 substrate Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 230000001902 propagating effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 5
- 229910001120 nichrome Inorganic materials 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/4908—Acoustic transducer
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
第1の媒質として、15°YカットX伝搬のLiNbO3基板を用意し、該LiNbO3基板上に、図2に示した電極構造を作製した。すなわち、図2(a)に示されている入力IDT205、出力IDT206,207及び反射器208,209を形成した。電極の形成に際しては、LiNbO3基板を洗浄した後、レジストをスピンコーティングし、プリベークした後、現像し、レジストパターンを形成した。しかる後、NiCr膜及びAu膜をこの順序で真空蒸着し、レジストをリフトオフし、洗浄した。上記のようにして、Au膜の膜厚が0.055λ、NiCrの膜厚が0.001λである電極構造を得た。
第1の媒質として、15°YカットX伝搬のLiNbO3基板を用意し、実施例1と同様に図2(a)に示した電極構造を実施例1と同様にして形成した。このように電極が形成されたLiNbO3基板を多数用意した。
2…第2の媒質
3…第3の媒質
5…電極
20…弾性境界波装置
21…第1の媒質
22…第2の媒質
23…第3の媒質
24…第4の媒質
25…電極
Claims (6)
- 第1〜第3の媒質がこの順序で積層されており、かつ第1の媒質と第2の媒質との境界に電極が配置されている弾性境界波装置の製造方法であって、
第1の媒質と第2の媒質とが積層されており、第1,第2の媒質の境界に電極が配置されている積層体を用意する工程と、
前記積層体段階で第2の媒質の膜厚により周波数または弾性表面波の音速を調整する調整工程と、
前記調整工程後に、弾性境界波の音速及び/または材料が第2の媒質とは異なる第3の媒質を形成する工程とを備える、弾性境界波装置の製造方法。 - 第3の媒質の厚みが、弾性境界波の波長をλとしたときに、0.5λより大きい、請求項1に記載の弾性境界波装置の製造方法。
- 少なくとも1つの媒質が、複数の材料層を積層した積層構造を有する、請求項1または2に記載の弾性境界波装置の製造方法。
- 前記電極として、Au、Ag、Cu、Fe、Ta、W、Ti及びPtからなる群から選択された1種の金属を用いる、請求項1〜3のいずれか1項に記載の弾性境界波装置の製造方法。
- 前記媒質が、ニオブ酸リチウム、ニオブ酸カリウム、タンタル酸リチウム、四ほう酸リチウム、ランガサイトやランガナイト、水晶、PZT(チタン酸ジルコン酸鉛系セラミックス)、ZnO、AlN、酸化珪素、ガラス、シリコン、サファイア、窒化シリコン及び窒素化炭素からなる群から選択された少なくとも1種の材料を用いて構成されている、請求項1〜4のいずれか1項に記載の弾性境界波装置の製造方法。
- 前記電極が、弾性境界波共振子または弾性境界波フィルタを構成するための電極であり、弾性境界波装置として、弾性境界波共振子または弾性境界波フィルタが得られる、請求項1〜5のいずれか1項に記載の弾性境界波装置の製造方法。
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JP2010047762A Active JP5099151B2 (ja) | 2004-03-29 | 2010-03-04 | 弾性境界波装置の製造方法 |
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Country Status (6)
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US (3) | US7322093B2 (ja) |
EP (2) | EP2383888A3 (ja) |
JP (2) | JP4535067B2 (ja) |
KR (1) | KR100804407B1 (ja) |
CN (4) | CN101714858B (ja) |
WO (1) | WO2005093949A1 (ja) |
Families Citing this family (61)
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DE102004045181B4 (de) * | 2004-09-17 | 2016-02-04 | Epcos Ag | SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung |
JP2006279609A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Media Device Kk | 弾性境界波素子、共振子およびラダー型フィルタ |
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EP2383888A3 (en) | 2012-08-01 |
JPWO2005093949A1 (ja) | 2008-02-14 |
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US20070222337A1 (en) | 2007-09-27 |
JP2010166592A (ja) | 2010-07-29 |
EP2383888A2 (en) | 2011-11-02 |
US7581306B2 (en) | 2009-09-01 |
EP1732214A4 (en) | 2008-08-06 |
US20070018536A1 (en) | 2007-01-25 |
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EP1732214A1 (en) | 2006-12-13 |
US7550898B2 (en) | 2009-06-23 |
CN101714858A (zh) | 2010-05-26 |
KR100804407B1 (ko) | 2008-02-15 |
CN103187944A (zh) | 2013-07-03 |
CN101741342A (zh) | 2010-06-16 |
CN1938946A (zh) | 2007-03-28 |
JP4535067B2 (ja) | 2010-09-01 |
KR20060129514A (ko) | 2006-12-15 |
US7322093B2 (en) | 2008-01-29 |
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