JP5093991B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5093991B2
JP5093991B2 JP2005101822A JP2005101822A JP5093991B2 JP 5093991 B2 JP5093991 B2 JP 5093991B2 JP 2005101822 A JP2005101822 A JP 2005101822A JP 2005101822 A JP2005101822 A JP 2005101822A JP 5093991 B2 JP5093991 B2 JP 5093991B2
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JP
Japan
Prior art keywords
recess
gan
layer
gate
electron supply
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Expired - Fee Related
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JP2005101822A
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English (en)
Japanese (ja)
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JP2006286740A5 (enExample
JP2006286740A (ja
Inventor
健 川崎
健 中田
誠司 八重樫
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2005101822A priority Critical patent/JP5093991B2/ja
Priority to US11/392,516 priority patent/US8044433B2/en
Publication of JP2006286740A publication Critical patent/JP2006286740A/ja
Publication of JP2006286740A5 publication Critical patent/JP2006286740A5/ja
Application granted granted Critical
Publication of JP5093991B2 publication Critical patent/JP5093991B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2005101822A 2005-03-31 2005-03-31 半導体装置 Expired - Fee Related JP5093991B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005101822A JP5093991B2 (ja) 2005-03-31 2005-03-31 半導体装置
US11/392,516 US8044433B2 (en) 2005-03-31 2006-03-30 GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005101822A JP5093991B2 (ja) 2005-03-31 2005-03-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2006286740A JP2006286740A (ja) 2006-10-19
JP2006286740A5 JP2006286740A5 (enExample) 2008-05-01
JP5093991B2 true JP5093991B2 (ja) 2012-12-12

Family

ID=37069261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005101822A Expired - Fee Related JP5093991B2 (ja) 2005-03-31 2005-03-31 半導体装置

Country Status (2)

Country Link
US (1) US8044433B2 (enExample)
JP (1) JP5093991B2 (enExample)

Families Citing this family (35)

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JP2007194588A (ja) * 2005-12-20 2007-08-02 Sony Corp 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法
EP2040299A1 (en) * 2007-09-12 2009-03-25 Forschungsverbund Berlin e.V. Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device
JP5555985B2 (ja) * 2008-06-23 2014-07-23 サンケン電気株式会社 半導体装置
JP5564791B2 (ja) * 2008-12-26 2014-08-06 富士通株式会社 化合物半導体装置及びその製造方法
JP5577681B2 (ja) 2009-11-30 2014-08-27 住友電気工業株式会社 半導体装置
US20130020584A1 (en) * 2010-04-22 2013-01-24 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing same
DE102010016993A1 (de) 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement
JP5776143B2 (ja) * 2010-07-06 2015-09-09 サンケン電気株式会社 半導体装置
JP5747245B2 (ja) * 2010-10-14 2015-07-08 国立研究開発法人物質・材料研究機構 電界効果トランジスタ及びその製造方法
CN102064261B (zh) * 2010-11-03 2012-09-05 中国科学院半导体研究所 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法
JP2012109366A (ja) * 2010-11-17 2012-06-07 Sharp Corp 窒化物半導体装置
JP5801560B2 (ja) * 2011-01-21 2015-10-28 株式会社豊田中央研究所 半導体装置
JP5566937B2 (ja) * 2011-03-28 2014-08-06 古河電気工業株式会社 窒化物系半導体デバイス及びその製造方法
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
JP5790461B2 (ja) 2011-12-07 2015-10-07 富士通株式会社 化合物半導体装置及びその製造方法
EP2608268B8 (en) 2011-12-19 2017-06-21 Nexperia B.V. Semiconductor device
JP5991000B2 (ja) * 2012-04-23 2016-09-14 三菱電機株式会社 半導体装置およびその製造方法
US9379195B2 (en) * 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US10700201B2 (en) 2012-05-23 2020-06-30 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
EP2852979A4 (en) * 2012-05-23 2015-11-18 Hrl Lab Llc FIELD EFFECT TRANSISTOR WITH HIGH ELECTRONIC MOBILITY AND METHOD FOR THE MANUFACTURE THEREOF
US9000484B2 (en) 2012-05-23 2015-04-07 Hrl Laboratories, Llc Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
WO2013176904A1 (en) * 2012-05-23 2013-11-28 Hrl Laboratories, Llc Hemt device and method of manufacturing the same
US8680536B2 (en) 2012-05-23 2014-03-25 Hrl Laboratories, Llc Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
US8981528B2 (en) * 2012-11-16 2015-03-17 Vishay General Semiconductor Llc GaN-based Schottky diode having partially recessed anode
JP2016058681A (ja) * 2014-09-12 2016-04-21 株式会社東芝 半導体装置
JP6332021B2 (ja) 2014-12-26 2018-05-30 株式会社デンソー 半導体装置
US10177061B2 (en) 2015-02-12 2019-01-08 Infineon Technologies Austria Ag Semiconductor device
JP6311668B2 (ja) 2015-07-10 2018-04-18 株式会社デンソー 半導体装置
ITUB20155536A1 (it) * 2015-11-12 2017-05-12 St Microelectronics Srl Transistore hemt di tipo normalmente spento includente una trincea contenente una regione di gate e formante almeno un gradino, e relativo procedimento di fabbricazione
WO2019090762A1 (zh) * 2017-11-13 2019-05-16 吴展兴 半导体结构及其形成方法
US10680092B2 (en) 2018-10-01 2020-06-09 Semiconductor Components Industries, Llc Electronic device including a transistor with a non-uniform 2DEG
CN112133739B (zh) * 2019-06-25 2024-05-07 联华电子股份有限公司 高电子迁移率晶体管和调整二维电子气体电子密度的方法
JP7332548B2 (ja) * 2020-08-06 2023-08-23 株式会社東芝 半導体装置
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN117174749A (zh) 2022-05-26 2023-12-05 联华电子股份有限公司 漏极具有阶梯状化合物层的高电子移动率晶体管

Family Cites Families (11)

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JP2615585B2 (ja) * 1987-01-29 1997-05-28 日本電気株式会社 砒化ガリウムトランジスタ
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JPH10178024A (ja) * 1996-12-18 1998-06-30 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法
JP3127874B2 (ja) * 1998-02-12 2001-01-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
US6133593A (en) * 1999-07-23 2000-10-17 The United States Of America As Represented By The Secretary Of The Navy Channel design to reduce impact ionization in heterostructure field-effect transistors
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
DE20010743U1 (de) * 2000-06-16 2000-10-12 Westfalia Separator Food Tec GmbH, 59302 Oelde Zentrifuge mit doppeltem Zulauf
JP4186032B2 (ja) * 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
JP4022708B2 (ja) * 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
JP4220683B2 (ja) * 2001-03-27 2009-02-04 パナソニック株式会社 半導体装置

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US8044433B2 (en) 2011-10-25
US20060220065A1 (en) 2006-10-05
JP2006286740A (ja) 2006-10-19

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