JP5566937B2 - 窒化物系半導体デバイス及びその製造方法 - Google Patents
窒化物系半導体デバイス及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 150000004767 nitrides Chemical class 0.000 title claims description 38
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- 230000005684 electric field Effects 0.000 description 39
- 238000010586 diagram Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
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- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
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- 229910002704 AlGaN Inorganic materials 0.000 description 6
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- 239000002184 metal Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
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- 238000000151 deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Description
特許文献1 特開2009−246292号公報
Claims (19)
- 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたドレイン電極と、
前記ドレイン電極に流れる電流を制御するゲート電極と、
前記ゲート電極をはさんで前記ドレイン電極の反対側に形成されたソース電極と、
を備え、
前記ゲート電極と前記ドレイン電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されており、
前記複数の低濃度領域は、n型ドーパントが予め定められた濃度でイオン注入されて形成された
窒化物系半導体デバイス。 - 前記予め定められた濃度は、前記複数の低濃度領域のうちの前記ゲート電極側の低濃度領域に比べ前記複数の低濃度領域のうちの前記ドレイン電極側の低濃度領域の方が高い請求項1に記載の窒化物系半導体デバイス。
- 前記予め定められた濃度は、1E16cm−3以上である、
請求項1または2に記載の窒化物系半導体デバイス。 - 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたドレイン電極と、
前記ドレイン電極に流れる電流を制御するゲート電極と、
前記ゲート電極をはさんで前記ドレイン電極の反対側に形成されたソース電極と、
を備え、
前記ゲート電極と前記ドレイン電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されており、
前記複数の低濃度領域は、レーザを照射して形成された
窒化物系半導体デバイス。 - 前記ゲート電極は、前記電子供給層を貫通して形成される
請求項1から4のいずれか一項に記載の窒化物系半導体デバイス。 - 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたカソード電極及びアノード電極と、
を備え、
前記カソード電極と前記アノード電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されており、
前記複数の低濃度領域は、n型ドーパントが予め定められた濃度でイオン注入されて形成された
窒化物系半導体デバイス。 - 前記予め定められた濃度は、前記複数の低濃度領域のうちの前記アノード電極側の低濃度領域に比べ前記複数の低濃度領域のうちの前記カソード電極側の低濃度領域の方が高い請求項6に記載の窒化物系半導体デバイス。
- 前記予め定められた濃度は、1E16cm −3 以上である、
請求項6または7に記載の窒化物系半導体デバイス。 - 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたカソード電極及びアノード電極と、
を備え、
前記カソード電極と前記アノード電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されており、
前記複数の低濃度領域は、レーザを照射して形成された
窒化物系半導体デバイス。 - 前記複数の低濃度領域は、互いに等間隔に配置されている
請求項1から9のいずれか一項に記載の窒化物系半導体デバイス。 - 前記複数の低濃度領域は、前記電子走行層の表面において等間隔でかつマトリクス状に配置されている
請求項1から10のいずれか一項に記載の窒化物系半導体デバイス。 - 前記n型ドーパントは、Si、Ge、またはOのいずれかを含む、
請求項1または6に記載の窒化物系半導体デバイス。 - 前記電子走行層は、p型ドーパントがドープされたGaNを含む、
請求項1から12のいずれか一項に記載の窒化物系半導体デバイス。 - 前記p型ドーパントは、Mg、Be、Zn、Cのいずれかを含む、
請求項13に記載の窒化物系半導体デバイス。 - 前記電子供給層はAlxGa1−xN(0.01≦x≦0.4)を含む
請求項1から14のいずれか一項に記載の窒化物系半導体デバイス。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
ゲート電極を形成すべき領域とドレイン電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子走行層上に前記ドレイン電極及びソース電極を形成する工程と、
前記ドレイン電極に流れる電流を制御する前記ゲート電極を形成する工程と、
を備え、
前記複数の低濃度領域を形成する工程は、n型ドーパントを予め定められた濃度でイオン注入する工程を含む
製造方法。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
ゲート電極を形成すべき領域とドレイン電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子走行層上に前記ドレイン電極及びソース電極を形成する工程と、
前記ドレイン電極に流れる電流を制御する前記ゲート電極を形成する工程と、
を備え、
前記複数の低濃度領域を形成する工程は、レーザを照射して結晶欠陥を形成する工程を含む
製造方法。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
カソード電極を形成すべき領域とアノード電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子供給層上に前記アノード電極を形成する工程と、
前記電子供給層上に前記カソード電極を形成する工程と
を備え、
前記複数の低濃度領域を形成する工程は、n型ドーパントを予め定められた濃度でイオン注入する工程を含む
製造方法。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
カソード電極を形成すべき領域とアノード電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子供給層上に前記アノード電極を形成する工程と、
前記電子供給層上に前記カソード電極を形成する工程と
を備え、
前記複数の低濃度領域を形成する工程は、レーザを照射して結晶欠陥を形成する工程を含む
製造方法。
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