JP2012204740A - 窒化物系半導体デバイス及びその製造方法 - Google Patents
窒化物系半導体デバイス及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 34
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- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000005684 electric field Effects 0.000 description 39
- 238000010586 diagram Methods 0.000 description 26
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
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- 239000002184 metal Substances 0.000 description 6
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
【解決手段】基板10と、基板10の上方に形成された電子走行層30と、電子走行層30上に形成された、電子走行層30とバンドギャップエネルギーの異なる電子供給層40と、電子供給層40上に形成されたドレイン電極80と、ドレイン電極80に流れる電流を制御するゲート電極70と、ゲート電極70をはさんでドレイン電極80の反対側に形成されたソース電極90とを備え、ゲート電極70とドレイン電極80との間の電子走行層30の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域32が、互いに離れて形成されている、窒化物系半導体デバイス100。
【選択図】図1
Description
特許文献1 特開2009−246292号公報
Claims (17)
- 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたドレイン電極と、
前記ドレイン電極に流れる電流を制御するゲート電極と、
前記ゲート電極をはさんで前記ドレイン電極の反対側に形成されたソース電極と、
を備え、
前記ゲート電極と前記ドレイン電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されている、
窒化物系半導体デバイス。 - 前記複数の低濃度領域は、n型ドーパントが予め定められた濃度でイオン注入されて形成された
請求項1に記載の窒化物系半導体デバイス。 - 前記予め定められた濃度は、前記複数の低濃度領域のうちの前記ゲート電極側の低濃度領域に比べ前記複数の低濃度領域のうちの前記ドレイン電極側の低濃度領域の方が高い
請求項2に記載の窒化物系半導体デバイス。 - 前記予め定められた濃度は、1E16cm−3以上である、
請求項2または3に記載の窒化物系半導体デバイス。 - 前記ゲート電極は、前記電子供給層を貫通して形成される
請求項1に記載の窒化物系半導体デバイス。 - 前記複数の低濃度領域は、レーザを照射して形成された
請求項1に記載の窒化物系半導体デバイス。 - 前記複数の低濃度領域は、互いに等間隔に配置されている
請求項1から6のいずれか一項に記載の窒化物系半導体デバイス。 - 前記複数の低濃度領域は、前記電子走行層の表面において等間隔でかつマトリクス状に配置されている
請求項1から7のいずれか一項に記載の窒化物系半導体デバイス。 - 前記n型ドーパントは、Si、Ge、またはOのいずれかを含む、
請求項2に記載の窒化物系半導体デバイス。 - 前記電子走行層は、p型ドーパントがドープされたGaNを含む、
請求項1から9のいずれか一項に記載の窒化物系半導体デバイス。 - 前記p型ドーパントは、Mg、Be、Zn、Cのいずれかを含む、
請求項10に記載の窒化物系半導体デバイス。 - 前記電子供給層はAlxGa1−xN(0.01≦x≦0.4)を含む
請求項1から11のいずれか一項に記載の窒化物系半導体デバイス。 - 窒化物系半導体デバイスであって、
基板と、
前記基板の上方に形成された電子走行層と、
前記電子走行層上に形成された、前記電子走行層とバンドギャップエネルギーの異なる電子供給層と、
前記電子供給層上に形成されたカソード電極及びアノード電極と、
を備え、
前記カソード電極と前記アノード電極との間の前記電子走行層の表面には、2次元電子ガスの濃度が他の領域より低い複数の低濃度領域が、互いに離れて形成されている、
窒化物系半導体デバイス。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
ゲート電極を形成すべき領域とドレイン電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子走行層上に前記ドレイン電極及びソース電極を形成する工程と、
前記ドレイン電極に流れる電流を制御する前記ゲート電極を形成する工程と、
を備える製造方法。 - 窒化物系半導体デバイスの製造方法であって、
基板の上方に電子走行層を形成する工程と、
前記電子走行層上に前記電子走行層とバンドギャップエネルギーの異なる電子供給層を形成する工程と、
カソード電極を形成すべき領域とアノード電極を形成すべき領域との間の前記電子走行層の表面に、2次元電子ガスの濃度が他の領域より低い、互いに離れた複数の低濃度領域を形成する工程と、
前記電子供給層上に前記アノード電極を形成する工程と、
前記電子供給層上に前記カソード電極を形成する工程と
を備える製造方法。 - 前記複数の低濃度領域を形成する工程は、n型ドーパントを予め定められた濃度でイオン注入する工程を含む
請求項14または15に記載の製造方法。 - 前記複数の低濃度領域を形成する工程は、レーザを照射して結晶欠陥を形成する工程を含む
請求項14または15に記載の製造方法。
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PCT/JP2012/002114 WO2012132407A1 (ja) | 2011-03-28 | 2012-03-27 | 窒化物系半導体デバイス及びその製造方法 |
US13/952,652 US20130306980A1 (en) | 2011-03-28 | 2013-07-28 | Nitride semiconductor device and manufacturing method thereof |
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JP6211804B2 (ja) * | 2013-05-30 | 2017-10-11 | トランスフォーム・ジャパン株式会社 | 半導体装置 |
JP2015177016A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
DE102014116999A1 (de) * | 2014-11-20 | 2016-05-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
ITUB20155862A1 (it) | 2015-11-24 | 2017-05-24 | St Microelectronics Srl | Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione |
US20170278960A1 (en) * | 2016-03-24 | 2017-09-28 | Delta Electronics, Inc. | Semiconductor device and manufacturing method thereof |
CN110112214A (zh) * | 2019-04-25 | 2019-08-09 | 芜湖启迪半导体有限公司 | 一种耐高压的hemt器件及制备方法 |
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