JP5081899B2 - 蒸着源、蒸着装置、成膜方法 - Google Patents

蒸着源、蒸着装置、成膜方法 Download PDF

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JP5081899B2
JP5081899B2 JP2009506290A JP2009506290A JP5081899B2 JP 5081899 B2 JP5081899 B2 JP 5081899B2 JP 2009506290 A JP2009506290 A JP 2009506290A JP 2009506290 A JP2009506290 A JP 2009506290A JP 5081899 B2 JP5081899 B2 JP 5081899B2
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vapor deposition
deposition material
evaporation chamber
chamber
mass
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Japanese (ja)
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JPWO2008117690A1 (ja
Inventor
敏夫 根岸
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009506290A 2007-03-26 2008-03-17 蒸着源、蒸着装置、成膜方法 Active JP5081899B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009506290A JP5081899B2 (ja) 2007-03-26 2008-03-17 蒸着源、蒸着装置、成膜方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007078252 2007-03-26
JP2007078252 2007-03-26
PCT/JP2008/054876 WO2008117690A1 (ja) 2007-03-26 2008-03-17 蒸着源、蒸着装置、成膜方法
JP2009506290A JP5081899B2 (ja) 2007-03-26 2008-03-17 蒸着源、蒸着装置、成膜方法

Publications (2)

Publication Number Publication Date
JPWO2008117690A1 JPWO2008117690A1 (ja) 2010-07-15
JP5081899B2 true JP5081899B2 (ja) 2012-11-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009506290A Active JP5081899B2 (ja) 2007-03-26 2008-03-17 蒸着源、蒸着装置、成膜方法

Country Status (7)

Country Link
US (1) US20100015324A1 (ko)
JP (1) JP5081899B2 (ko)
KR (1) KR101167547B1 (ko)
CN (1) CN101641457B (ko)
DE (1) DE112008000669T5 (ko)
TW (1) TWI409346B (ko)
WO (1) WO2008117690A1 (ko)

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KR100984148B1 (ko) * 2007-12-21 2010-09-28 삼성전기주식회사 소스량 제어가 가능한 진공증착장치
JP2010111916A (ja) * 2008-11-06 2010-05-20 Ulvac Japan Ltd 真空蒸着装置、蒸着源、成膜室、蒸着容器交換方法
KR101103508B1 (ko) * 2009-02-10 2012-01-06 한국생산기술연구원 선형 유기물 증착 장치
JP5186591B2 (ja) * 2009-02-24 2013-04-17 株式会社アルバック 有機化合物蒸気発生装置及び有機薄膜製造装置
CN102414339A (zh) * 2009-04-24 2012-04-11 东京毅力科创株式会社 蒸镀处理装置和蒸镀处理方法
JP5410235B2 (ja) * 2009-10-15 2014-02-05 小島プレス工業株式会社 有機高分子薄膜の形成方法及び形成装置
KR101132834B1 (ko) * 2009-10-29 2012-04-02 한국생산기술연구원 유기박막 증착 장치
JP5414587B2 (ja) * 2010-03-23 2014-02-12 日立造船株式会社 蒸着装置
JP5820731B2 (ja) * 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
WO2012175124A1 (en) 2011-06-22 2012-12-27 Aixtron Se Vapor deposition material source and method for making same
DE102011051260A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
WO2012175128A1 (en) 2011-06-22 2012-12-27 Aixtron Se Vapor deposition system and supply head
JP5877245B2 (ja) 2011-06-22 2016-03-02 アイクストロン、エスイー 気相蒸着方法及び気相蒸着装置
JP2013127086A (ja) * 2011-12-16 2013-06-27 Ulvac Japan Ltd 蒸着装置及び蒸着方法
JP2013189701A (ja) * 2012-02-14 2013-09-26 Tokyo Electron Ltd 成膜装置
KR101363354B1 (ko) * 2012-05-01 2014-02-17 주식회사 유니텍스 소스 컨테이너 및 기상 증착용 반응로
KR101364835B1 (ko) * 2012-06-20 2014-02-25 주식회사 야스 고온 증발원 및 그 제조방법
CN103966551B (zh) * 2013-01-27 2016-11-23 常州国成新材料科技有限公司 一种解决高温下衬底原子蒸发影响平整度的方法及装置
CN104278249A (zh) * 2013-07-02 2015-01-14 上海和辉光电有限公司 坩埚材料量检测装置、方法及蒸镀机
CN103812854B (zh) * 2013-08-19 2015-03-18 深圳光启创新技术有限公司 身份认证系统、装置、方法以及身份认证请求装置
TWI472635B (zh) * 2013-09-13 2015-02-11 Univ Nat Taiwan 脈衝雷射蒸鍍系統
JP6593845B2 (ja) * 2014-08-29 2019-10-23 国立研究開発法人産業技術総合研究所 有機材料膜又は有機無機複合材料膜のレーザー蒸着方法、レーザー蒸着装置
CN105586570A (zh) * 2014-11-17 2016-05-18 上海和辉光电有限公司 辐射源蒸发系统及蒸镀控制方法
KR102149172B1 (ko) * 2015-10-06 2020-08-28 가부시키가이샤 아루박 재료 공급 장치 및 증착 장치
DE102016121256B4 (de) 2016-11-07 2020-11-26 Carl Zeiss Vision International Gmbh Vakuumverdampfungseinrichtung, Tiegelabdeckung mit Nachfülleinrichtung und Vakuumbeschichtungsverfahren
CN111788330A (zh) * 2018-03-08 2020-10-16 堺显示器制品株式会社 成膜装置、蒸镀膜的成膜方法以及有机el显示装置的制造方法
JP6959680B1 (ja) * 2020-11-13 2021-11-05 株式会社シンクロン 成膜装置
CN113136549A (zh) * 2021-05-17 2021-07-20 华能新能源股份有限公司 一种蒸发物料控制系统和方法

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JP2000252061A (ja) * 1999-03-03 2000-09-14 Sony Corp 電界発光素子の製造方法及びその装置、並びに電界発光素子用のペレットの製造方法
JP2002235167A (ja) * 2001-02-06 2002-08-23 Toyota Motor Corp 真空蒸着装置
JP2003293121A (ja) * 2002-04-05 2003-10-15 Cluster Ion Beam Technology Kk 蒸着材料供給手段を備えた蒸着用坩堝
JP2005036296A (ja) * 2003-07-17 2005-02-10 Fuji Electric Holdings Co Ltd 有機薄膜の製造方法および製造装置
JP2005307302A (ja) * 2004-04-23 2005-11-04 Canon Inc 成膜方法

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DE69218152T2 (de) * 1991-12-26 1997-08-28 Canon K.K., Tokio/Tokyo Herstellungsverfahren einer niedergeschlagenen Schicht mittels CVD, unter Verwendung von flüssigem Rohstoff und dazu geeignete Vorrichtung
DE69825893T2 (de) * 1997-05-08 2005-09-08 Matsushita Electric Industrial Co., Ltd., Kadoma Vorrichtung und verfahren zur herstellung eines aufzeichnungsträgers
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JP2000252061A (ja) * 1999-03-03 2000-09-14 Sony Corp 電界発光素子の製造方法及びその装置、並びに電界発光素子用のペレットの製造方法
JP2002235167A (ja) * 2001-02-06 2002-08-23 Toyota Motor Corp 真空蒸着装置
JP2003293121A (ja) * 2002-04-05 2003-10-15 Cluster Ion Beam Technology Kk 蒸着材料供給手段を備えた蒸着用坩堝
JP2005036296A (ja) * 2003-07-17 2005-02-10 Fuji Electric Holdings Co Ltd 有機薄膜の製造方法および製造装置
JP2005307302A (ja) * 2004-04-23 2005-11-04 Canon Inc 成膜方法

Also Published As

Publication number Publication date
WO2008117690A1 (ja) 2008-10-02
CN101641457A (zh) 2010-02-03
JPWO2008117690A1 (ja) 2010-07-15
DE112008000669T5 (de) 2010-03-25
TWI409346B (zh) 2013-09-21
CN101641457B (zh) 2012-04-25
US20100015324A1 (en) 2010-01-21
TW200907078A (en) 2009-02-16
KR101167547B1 (ko) 2012-07-20
KR20090114475A (ko) 2009-11-03

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