CN103966551B - 一种解决高温下衬底原子蒸发影响平整度的方法及装置 - Google Patents
一种解决高温下衬底原子蒸发影响平整度的方法及装置 Download PDFInfo
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- CN103966551B CN103966551B CN201310041952.3A CN201310041952A CN103966551B CN 103966551 B CN103966551 B CN 103966551B CN 201310041952 A CN201310041952 A CN 201310041952A CN 103966551 B CN103966551 B CN 103966551B
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
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- 239000011651 chromium Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
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- 239000010703 silicon Substances 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
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- 229910017052 cobalt Inorganic materials 0.000 claims description 4
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 8
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- 238000006243 chemical reaction Methods 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
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CN201310041952.3A CN103966551B (zh) | 2013-01-27 | 2013-01-27 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
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CN103966551B true CN103966551B (zh) | 2016-11-23 |
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CN104152859A (zh) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | 一种在真空中以多面加热来构筑恒温区域的方式 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0136954B1 (ko) * | 1995-03-14 | 1998-07-01 | 이규용 | 이종금속 및 이종소재의 브레이징 접합방법 |
CN1346903A (zh) * | 2000-10-11 | 2002-05-01 | 郭汉生 | 补偿超导体镀膜中铜损失的复合基带的制法及其构成 |
JP2005126757A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 化合物薄膜の製造装置および方法 |
CN101641457A (zh) * | 2007-03-26 | 2010-02-03 | 株式会社爱发科 | 蒸镀源、蒸镀装置、成膜方法 |
WO2011160950A1 (en) * | 2010-06-24 | 2011-12-29 | Soitec | Method for preparing a substrate by implantation and irradiation |
CN102691041A (zh) * | 2011-03-22 | 2012-09-26 | 株式会社日立国际电气 | 衬底处理装置和固体原料补充方法 |
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2013
- 2013-01-27 CN CN201310041952.3A patent/CN103966551B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0136954B1 (ko) * | 1995-03-14 | 1998-07-01 | 이규용 | 이종금속 및 이종소재의 브레이징 접합방법 |
CN1346903A (zh) * | 2000-10-11 | 2002-05-01 | 郭汉生 | 补偿超导体镀膜中铜损失的复合基带的制法及其构成 |
JP2005126757A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 化合物薄膜の製造装置および方法 |
CN101641457A (zh) * | 2007-03-26 | 2010-02-03 | 株式会社爱发科 | 蒸镀源、蒸镀装置、成膜方法 |
WO2011160950A1 (en) * | 2010-06-24 | 2011-12-29 | Soitec | Method for preparing a substrate by implantation and irradiation |
CN102691041A (zh) * | 2011-03-22 | 2012-09-26 | 株式会社日立国际电气 | 衬底处理装置和固体原料补充方法 |
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Address after: 213000 No. 6 Xiangyun Road, West Taihu science and Technology Industrial Zone, Wujin District, Jiangsu, Changzhou Patentee after: Guocheng instrument (Changzhou) Co., Ltd Address before: 213000 No. 6 Xiangyun Road, West Taihu science and Technology Industrial Zone, Wujin District, Jiangsu, Changzhou Patentee before: CHANGZHOU GUOCHENG NEW MATERIAL TECHNOLOGY Co.,Ltd. |