JP5081389B2 - 光起電力装置の製造方法 - Google Patents
光起電力装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 61
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Description
図1は、本発明の第1実施形態による光起電力装置の構成を示した断面図である。まず、図1を参照して、本発明の第1実施形態による光起電力装置の構成について説明する。
図8は、本発明の第2実施形態による光起電力装置の構成を示した断面図である。図8を参照して、この第2実施形態では、上記第1実施形態とは異なり、基板側電極3aと背面電極7bとがシリコン溶融物22と接続電極23とにより電気的に接続された光起電力装置21について説明する。
2 基板
3 基板側電極
3a 基板側電極(第1基板側電極)
3b 基板側電極(第2基板側電極)
3c 開溝部(第1開溝部)
4 光電変換ユニット(第1光電変換部)
4a、5a、6a、7c、20c 開溝部(第4開溝部)
4b、5b、6b、7d、20a 開溝部(第2開溝部)
4c、5c、6c、7e、20b 開溝部(第3開溝部)
5 中間層
6 光電変換ユニット(第2光電変換部)
7 背面電極
7a 背面電極(第1背面電極)
7b 背面電極(第2背面電極)
8 絶縁部材(第1絶縁部材)
9 接続電極(導電性部材)
10 絶縁部材(第2絶縁部材)
22 シリコン溶融物(溶融部、導電性部材)
23 接続電極(接続部、導電性部材)
Claims (1)
- 絶縁性表面を有する基板の前記絶縁性表面上に基板側電極を形成する工程と、
前記基板側電極に第1開溝部を形成することによって、前記第1開溝部により分離された第1基板側電極および第2基板側電極を形成する工程と、
前記第1基板側電極および前記第2基板側電極を覆うように第1光電変換部を形成する工程と、
前記第1光電変換部の表面上に導電性を有する中間層を介して第2光電変換部を形成する工程と、
前記第2光電変換部の表面上に背面電極を形成する工程と、
その後、前記背面電極を第1背面電極および第2背面電極に分離するための第2開溝部を形成するとともに、前記第1開溝部と前記第2開溝部との間の領域において、前記第2背面電極の上面から少なくとも前記中間層を貫くように第3開溝部を形成する工程と、
前記第2開溝部と前記第3開溝部との間の領域において、前記背面電極の上面から前記基板側電極の表面に達する第4開講部を形成する工程と、
前記第3開溝部内に、少なくとも前記中間層の切断部を覆うように第1絶縁部材を形成する工程と、
前記第4開講部において、前記第1基板側電極に電気的に接続されるとともに、前記第3開溝部を跨いで前記第2背面電極に電気的に接続される導電性部材を形成する工程とを備える、光起電力装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006046083A JP5081389B2 (ja) | 2006-02-23 | 2006-02-23 | 光起電力装置の製造方法 |
US11/705,770 US8207441B2 (en) | 2006-02-23 | 2007-02-14 | Photovoltaic apparatus and method of manufacturing the same |
EP07250625A EP1826830A3 (en) | 2006-02-23 | 2007-02-15 | Photovoltaic apparatus and method of manufacturing the same |
CN2007100788236A CN101026174B (zh) | 2006-02-23 | 2007-02-15 | 半导体装置及其制造方法 |
CN2010100033454A CN101794794B (zh) | 2006-02-23 | 2007-02-15 | 光电动势装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006046083A JP5081389B2 (ja) | 2006-02-23 | 2006-02-23 | 光起電力装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007227577A JP2007227577A (ja) | 2007-09-06 |
JP5081389B2 true JP5081389B2 (ja) | 2012-11-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006046083A Expired - Fee Related JP5081389B2 (ja) | 2006-02-23 | 2006-02-23 | 光起電力装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8207441B2 (ja) |
EP (1) | EP1826830A3 (ja) |
JP (1) | JP5081389B2 (ja) |
CN (2) | CN101794794B (ja) |
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JP4425296B2 (ja) | 2007-07-09 | 2010-03-03 | 三洋電機株式会社 | 光起電力装置 |
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2006
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US20070193619A1 (en) | 2007-08-23 |
CN101794794B (zh) | 2011-12-28 |
CN101026174A (zh) | 2007-08-29 |
EP1826830A3 (en) | 2010-02-24 |
US8207441B2 (en) | 2012-06-26 |
CN101794794A (zh) | 2010-08-04 |
CN101026174B (zh) | 2010-05-26 |
EP1826830A2 (en) | 2007-08-29 |
JP2007227577A (ja) | 2007-09-06 |
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