JP2005101384A - 光起電力装置及びその製造方法 - Google Patents
光起電力装置及びその製造方法 Download PDFInfo
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- JP2005101384A JP2005101384A JP2003334493A JP2003334493A JP2005101384A JP 2005101384 A JP2005101384 A JP 2005101384A JP 2003334493 A JP2003334493 A JP 2003334493A JP 2003334493 A JP2003334493 A JP 2003334493A JP 2005101384 A JP2005101384 A JP 2005101384A
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- 230000010354 integration Effects 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】 第1電極膜3と、光電変換層4と、第2電極膜5とを基板1の絶縁層2上に分割することなく順次積層形成した後、前記積層膜に第1電極膜3まで電気的に分離するに至る深い開溝71を設けるとともに、深い開溝71に平行に僅かの間隔を設けて、少なくとも第2電極膜5を分離する浅い開溝61を2つ設け、3つ以上の開溝が設けられた第2電極膜5をマスクとしてエッチング10により、光電変換層4を除去し、少なくとも1つの開溝61の底部に第1電極膜5を露出させ、前記深い開溝71内、或いは深い開溝上面を塞いで絶縁部材7を形成するとともに、第1の電極膜3が露出する開溝を充填し、深い開溝71を跨いで隣接素子上に延在する導電部材を形成する。
【選択図】 図2
Description
2 絶縁層
3 第1の電極
4 光電変換層
5 透光性電極膜(第2の電極)
6 バスバー
7 電気的絶縁部材
8 フィン
61 浅い開溝
71 深い開溝
Claims (3)
- 絶縁表面を有する基板上に設けられた第1電極膜と、薄膜半導体からなる光電変換層と、この光電変換層上に形成された第2電極膜とを有する光電変換素子を複数直列に接続した集積型光起電力装置の製造方法であって、第1電極膜と、光電変換層と、第2電極膜とを基板の絶縁表面上に分割することなく順次積層形成した後、前記積層膜に第1電極膜まで電気的に分離するに至る深い開溝を設けるとともに、前記深い開溝に平行に僅かの間隔を設けて、少なくとも第2電極膜を分離する浅い開溝を少なくとも1つ以上設け、前記2つ以上の開溝が設けられた第2電極膜をマスクとしてエッチングにより、光電変換層を除去し、少なくとも1つの開溝の底部に前記第1電極膜を露出させ、前記深い開溝内、或いは深い開溝上面を塞いで絶縁部材を形成するとともに、第1の電極膜が露出する開溝を充填し、前記の深い開溝を跨いで隣接素子上に延在する導電部材を形成することを特徴とする集積型光起電力装置の製造方法。
- 前記エッチングは、CF4、或いはCF4とO2の混合ガスのプラズマに暴露することによるドライエッチングであることを特徴とする請求項1に記載の集積型光起電力装置の製造方法。
- 底部に前記第1電極膜を露出させる開溝は、鎖線状の開口部で形成されていることを特徴とする請求項1に記載の集積型光起電力装置の製造方法。
Priority Applications (2)
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JP2003334493A JP2005101384A (ja) | 2003-09-26 | 2003-09-26 | 光起電力装置及びその製造方法 |
US10/947,297 US7052998B2 (en) | 2003-09-26 | 2004-09-23 | Method of manufacturing photovoltaic device |
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JP2003334493A JP2005101384A (ja) | 2003-09-26 | 2003-09-26 | 光起電力装置及びその製造方法 |
Publications (1)
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JP2005101384A true JP2005101384A (ja) | 2005-04-14 |
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JP2003334493A Pending JP2005101384A (ja) | 2003-09-26 | 2003-09-26 | 光起電力装置及びその製造方法 |
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US (1) | US7052998B2 (ja) |
JP (1) | JP2005101384A (ja) |
Cited By (24)
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WO2007052668A1 (ja) * | 2005-10-31 | 2007-05-10 | Rohm Co., Ltd. | 光電変換装置の製造方法および光電変換装置 |
JP2007165902A (ja) * | 2005-12-14 | 2007-06-28 | Korea Advanced Inst Of Sci Technol | 透過型集積型薄膜太陽電池及びその製造方法と、その単位セルを電気的に直列接続する方法 |
JP2007165903A (ja) * | 2005-12-14 | 2007-06-28 | Korea Advanced Inst Of Sci Technol | 集積型薄膜太陽電池及びその製造方法 |
JP2007227577A (ja) * | 2006-02-23 | 2007-09-06 | Sanyo Electric Co Ltd | 光起電力装置およびその製造方法 |
JP2009283982A (ja) * | 2009-08-31 | 2009-12-03 | Sanyo Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
WO2010002005A1 (ja) * | 2008-07-04 | 2010-01-07 | 株式会社アルバック | 太陽電池セルの製造方法及び太陽電池セル |
JP2010093308A (ja) * | 2010-01-29 | 2010-04-22 | Sanyo Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
JP2010093309A (ja) * | 2010-01-29 | 2010-04-22 | Sanyo Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
WO2011001842A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
KR101037124B1 (ko) | 2010-01-29 | 2011-05-26 | 주식회사 티지솔라 | 태양전지 및 그 제조방법 |
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2003
- 2003-09-26 JP JP2003334493A patent/JP2005101384A/ja active Pending
-
2004
- 2004-09-23 US US10/947,297 patent/US7052998B2/en not_active Expired - Fee Related
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JP2007123721A (ja) * | 2005-10-31 | 2007-05-17 | Rohm Co Ltd | 光電変換装置の製造方法および光電変換装置 |
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