JP2012023357A - 光電変換装置及びその作製方法 - Google Patents
光電変換装置及びその作製方法 Download PDFInfo
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- JP2012023357A JP2012023357A JP2011134145A JP2011134145A JP2012023357A JP 2012023357 A JP2012023357 A JP 2012023357A JP 2011134145 A JP2011134145 A JP 2011134145A JP 2011134145 A JP2011134145 A JP 2011134145A JP 2012023357 A JP2012023357 A JP 2012023357A
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Abstract
【解決手段】一方の第1の電極と隣接する他方の第1の電極との間に形成された分離溝と、第1の電極上に形成された一導電型を有する第1の半導体層、真性半導体からなる第2の半導体層、及び一導電型とは逆の導電型を有する第3の半導体層からなる積層体と、一方の第1の電極と、隣接する他方の第1の電極上に形成された積層体の第3の半導体層と接する第2の電極とを接続する接続電極と、を有し、第2の半導体層の側面部は結晶化していない構成とする。
【選択図】図1
Description
である。
本実施の形態では、本発明の一態様である光電変換装置の構造、及びその作製方法について説明する。
本実施の形態では、実施の形態1で説明した光電変換装置と同等の構成をより簡易に作製できる光電変換装置の作製方法の例を説明する。
本明細書に開示する光電変換装置は、さまざまな電子機器に用いることができる。本実施の形態では、その一例として、電子書籍の電源として用いる例を説明する。
120 導電膜
140 第1の半導体層
150 第2の半導体層
160 第3の半導体層
180 透光性導電膜
210 マスク
230 絶縁体
250 マスク
270 接続電極
340 遮蔽板
120a 第1の電極
120b 第1の電極
180a 第2の電極
180b 第2の電極
210a 絶縁樹脂
300a 分離溝
300b 分離溝
320a 構造欠陥
320b 構造欠陥
400a 接続溝
400b 接続溝
9630 筐体
9631 表示部
9632 操作キー
9633 光電変換装置
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 DCDCコンバータ
Claims (13)
- 分離溝によって分割された一方及び他方の第1の電極と、
前記一方及び他方の第1の電極上に形成された一導電型を有する一方及び他方の第1の半導体層、真性半導体からなる一方及び他方の第2の半導体層、及び一導電型とは逆の導電型を有する一方及び他方の第3の半導体層からなる一方及び他方の積層体と、
前記一方の第1の電極の一部と前記分離溝と前記他方の第1の電極の一部と前記他方の積層体の一側面部を覆う絶縁体と、
前記絶縁体を覆い、前記一方の第1の電極と、前記他方の第3の半導体層を電気的に接続する第2の電極と、
前記一方の第1の電極と前記第2の電極とを電気的に接続する接続電極と、
を有し、
前記第2の半導体層の側面部は結晶化していないことを特徴とする光電変換装置。 - 請求項1において、前記積層体に形成された構造欠陥には絶縁樹脂が充填されていることを特徴とする光電変換装置。
- 請求項1または2において、前記接続電極は銀ペースト、ニッケルペースト、モリブデンペースト、及び銅ペーストから選ばれた一つ、またはそれらの積層で形成されていることを特徴とする光電変換装置。
- 分離溝によって分割された一方及び他方の第1の電極と、
前記一方及び他方の第1の電極上に形成された一導電型を有する一方及び他方の第1の半導体層、真性半導体からなる一方及び他方の第2の半導体層、一導電型とは逆の導電型を有する一方及び他方の第3の半導体層、及び一方及び他方の第2電極からなる一方及び他方の積層体と、
前記一方の第1の電極の一部、前記分離溝、前記他方の第1の電極の一部、及び前記他方の積層体の一側面部を覆う絶縁体と、
前記絶縁体を覆い、前記一方の第1の電極と、前記他方の第2の電極を電気的に接続する接続電極と、
を有し、
前記第2の半導体層の側面部は結晶化していないことを特徴とする光電変換装置。 - 請求項4において、前記接続電極はカーボンペースト、またはインジウム錫酸化物ペーストで形成されていることを特徴とする光電変換装置。
- 請求項1乃至5のいずれか一項において、前記第1及び第3の半導体層の側面部は、その中央部と結晶化率が異ならないことを特徴とする光電変換装置。
- 基板上に第1の導電層を形成し、
前記第1の導電層上に一導電型を有する第1の半導体層を形成し、
前記第1の半導体層上に真性半導体からなる第2の半導体層を形成し、
前記第2の半導体層上に一導電型とは逆の導電型を有する第3の半導体層を形成し、
前記第1の導電層、前記第1の半導体層、前記第2の半導体層、及び前記第3の半導体層を複数に分離する分離溝を設けて、一方及び他方の第1の電極と、該半導体層からなる積層体を形成し、
前記積層体を可剥離性樹脂で形成された第1のマスクを用いて選択的にエッチングし、
前記第1の電極の一部を露出させ、
前記第1のマスクを剥離し、
前記分離溝、及び前記エッチングを施した積層体の一側面部を絶縁体で封止し、
前記エッチングを施した積層体の一側面部以外の側面部及び前記第1の電極の一部を可剥離性樹脂で形成された第2のマスクで覆い、
前記エッチングを施した積層体、前記絶縁体、前記第1の電極、及び前記第2のマスク上に第2の導電層を形成し、
前記第2のマスクを剥離して前記エッチングを施した積層体の一側面部以外の側面部及び前記第1の電極の一部を露出させると共に一方及び他方の第2の電極を形成し、
前記一方の第1の電極と前記他方の第2の電極を接続する接続電極を形成することを特徴とする光電変換装置の作製方法。 - 請求項7において、前記第1のマスクの一部は、前記積層体に形成された構造欠陥に固定化されることを特徴とする光電変換装置の作製方法。
- 請求項7または8において、前記接続電極は銀ペースト、ニッケルペースト、モリブデンペースト、及び銅ペーストから選ばれた一つ、またはそれらの積層で形成することを特徴とする光電変換装置の作製方法。
- 基板上に第1の導電層を形成し、
前記第1の導電層上に一導電型を有する第1の半導体層を形成し、
前記第1の半導体層上に真性半導体からなる第2の半導体層を形成し、
前記第2の半導体層上に一導電型とは逆の導電型を有する第3の半導体層を形成し、
前記第3の半導体層上に第2の導電層を形成し、
前記第2の導電層を可剥離性樹脂で形成されたマスクを用いて選択的にエッチングし、
前記第1の導電層、前記第1の半導体層、前記第2の半導体層、前記第3の半導体層、及び前記第2の導電層を複数に分離する分離溝を設けて、
一方及び他方の第1の電極、該半導体層からなる積層体、及び一方及び他方の第2の電極を形成し、
前記積層体を前記マスクを用いて選択的にエッチングし、前記第1の電極の一部を露出させ、
前記マスクを剥離し、
前記分離溝、及び前記エッチングを施した積層体の一側面部を絶縁体で封止し、
前記一方の第1の電極と前記他方の第2の電極を接続する接続電極を形成することを特徴とする光電変換装置の作製方法。 - 基板上に第1の導電層を形成し、
前記第1の導電層上に一導電型を有する第1の半導体層を形成し、
前記第1の半導体層上に真性半導体からなる第2の半導体層を形成し、
前記第2の半導体層上に一導電型とは逆の導電型を有する第3の半導体層を形成し、
前記第3の半導体層上に第2の導電層を遮蔽板を用いて選択的に形成することで、一方及び他方の第2の電極を形成し、
前記第1の導電層、前記第1の半導体層、前記第2の半導体層、及び前記第3の半導体層を複数に分離する分離溝を設けて、一方及び他方の第1の電極と、該半導体層からなる積層体を形成し、
前記積層体を前記第2の電極をマスクとして選択的にエッチングして、前記第1の電極の一部を露出させ、
前記分離溝、及び前記エッチングを施した積層体の一側面部を絶縁体で封止し、
前記一方の第1の電極と前記他方の第2の電極を接続する接続電極を形成することを特徴とする光電変換装置の作製方法。 - 請求項10または11において、前記接続電極はカーボンペースト、またはインジウム錫酸化物ペーストで形成することを特徴とする光電変換装置の作製方法。
- 請求項7乃至12のいずれか一項において、前記分離溝は、レーザ加工で形成することを特徴とする光電変換装置の作製方法。
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