JP5051980B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5051980B2
JP5051980B2 JP2005104512A JP2005104512A JP5051980B2 JP 5051980 B2 JP5051980 B2 JP 5051980B2 JP 2005104512 A JP2005104512 A JP 2005104512A JP 2005104512 A JP2005104512 A JP 2005104512A JP 5051980 B2 JP5051980 B2 JP 5051980B2
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JP
Japan
Prior art keywords
layer
gan
sic
based semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005104512A
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English (en)
Japanese (ja)
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JP2006286910A5 (enExample
JP2006286910A (ja
Inventor
健 川崎
健 中田
誠司 八重樫
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2005104512A priority Critical patent/JP5051980B2/ja
Priority to EP11188204A priority patent/EP2418682A3/en
Priority to US11/392,517 priority patent/US7723751B2/en
Priority to EP06251774A priority patent/EP1708275B1/en
Publication of JP2006286910A publication Critical patent/JP2006286910A/ja
Publication of JP2006286910A5 publication Critical patent/JP2006286910A5/ja
Application granted granted Critical
Publication of JP5051980B2 publication Critical patent/JP5051980B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005104512A 2005-03-31 2005-03-31 半導体装置 Expired - Fee Related JP5051980B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005104512A JP5051980B2 (ja) 2005-03-31 2005-03-31 半導体装置
EP11188204A EP2418682A3 (en) 2005-03-31 2006-03-30 Semiconductor device and fabrication method of the same
US11/392,517 US7723751B2 (en) 2005-03-31 2006-03-30 Semiconductor device and fabrication method of the same
EP06251774A EP1708275B1 (en) 2005-03-31 2006-03-30 Semiconductor device and fabrication method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005104512A JP5051980B2 (ja) 2005-03-31 2005-03-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2006286910A JP2006286910A (ja) 2006-10-19
JP2006286910A5 JP2006286910A5 (enExample) 2008-05-15
JP5051980B2 true JP5051980B2 (ja) 2012-10-17

Family

ID=36643825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005104512A Expired - Fee Related JP5051980B2 (ja) 2005-03-31 2005-03-31 半導体装置

Country Status (3)

Country Link
US (1) US7723751B2 (enExample)
EP (2) EP1708275B1 (enExample)
JP (1) JP5051980B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
JP2008153371A (ja) * 2006-12-15 2008-07-03 Furukawa Electric Co Ltd:The 縦型電界効果トランジスタ
JP2008205414A (ja) * 2007-01-26 2008-09-04 Rohm Co Ltd 窒化物半導体素子、窒化物半導体パッケージおよび窒化物半導体素子の製造方法
JP5099116B2 (ja) * 2007-02-27 2012-12-12 富士通株式会社 化合物半導体装置とその製造方法
JP2008226914A (ja) * 2007-03-08 2008-09-25 Rohm Co Ltd ＧａＮ系半導体素子
JP2008227073A (ja) 2007-03-12 2008-09-25 Rohm Co Ltd 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法
JP5208463B2 (ja) * 2007-08-09 2013-06-12 ローム株式会社 窒化物半導体素子および窒化物半導体素子の製造方法
FR2924270B1 (fr) * 2007-11-27 2010-08-27 Picogiga Internat Procede de fabrication d'un dispositif electronique
JP5564842B2 (ja) 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置
US9312343B2 (en) * 2009-10-13 2016-04-12 Cree, Inc. Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials
US8242510B2 (en) * 2010-01-28 2012-08-14 Intersil Americas Inc. Monolithic integration of gallium nitride and silicon devices and circuits, structure and method
KR101984698B1 (ko) 2012-01-11 2019-05-31 삼성전자주식회사 기판 구조체, 이로부터 제조된 반도체소자 및 그 제조방법
JP5880311B2 (ja) * 2012-06-26 2016-03-09 住友電気工業株式会社 炭化珪素半導体装置
US9252324B2 (en) 2013-05-30 2016-02-02 Globalfoundries Inc Heterojunction light emitting diode
JP6052420B2 (ja) * 2013-08-27 2016-12-27 富士電機株式会社 半導体装置の製造方法
JP2015056556A (ja) * 2013-09-12 2015-03-23 株式会社東芝 半導体装置
US20150108500A1 (en) * 2013-10-18 2015-04-23 Infineon Technologies Austria Ag Semiconductor Device and Method of Manufacturing the Same
WO2015143158A1 (en) * 2014-03-20 2015-09-24 Massachusetts Institute Of Technology Vertical nitride semiconductor device
US20160293596A1 (en) 2015-03-30 2016-10-06 Texas Instruments Incorporated Normally off iii-nitride transistor
KR20160136813A (ko) * 2015-05-21 2016-11-30 서울반도체 주식회사 수직형 컨택 구조를 구비하는 질화물계 다이오드 소자 및 이의 제조 방법
US20170092753A1 (en) 2015-09-29 2017-03-30 Infineon Technologies Austria Ag Water and Ion Barrier for III-V Semiconductor Devices
US10505032B2 (en) 2015-10-30 2019-12-10 The Hong Kong University Of Science And Technology Semiconductor device with III-nitride channel region and silicon carbide drift region
US10062630B2 (en) * 2015-12-31 2018-08-28 Infineon Technologies Austria Ag Water and ion barrier for the periphery of III-V semiconductor dies
WO2017138398A1 (ja) * 2016-02-08 2017-08-17 パナソニック株式会社 半導体装置
CN107146811B (zh) * 2017-03-29 2019-12-10 西安电子科技大学 基于阻挡层调制结构的电流孔径功率晶体管及其制作方法
JP7303807B2 (ja) * 2018-07-17 2023-07-05 パナソニックホールディングス株式会社 窒化物半導体装置
US12132088B2 (en) * 2021-04-20 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
US12289899B2 (en) * 2021-12-17 2025-04-29 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same
WO2023162521A1 (ja) * 2022-02-22 2023-08-31 ローム株式会社 窒化物半導体装置およびその製造方法
US12471340B2 (en) * 2022-10-27 2025-11-11 Panjit International Inc. Manufacturing method of forming semiconductor device and semiconductor device
CN117810250B (zh) * 2024-02-23 2024-06-11 深圳天狼芯半导体有限公司 增强型垂直hemt器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406094A (en) * 1991-10-14 1995-04-11 Fujitsu Limited Quantum interference effect semiconductor device and method of producing the same
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JP3461274B2 (ja) 1996-10-16 2003-10-27 株式会社東芝 半導体装置
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides
US5877047A (en) * 1997-08-15 1999-03-02 Motorola, Inc. Lateral gate, vertical drift region transistor
JP4667556B2 (ja) * 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
JP3932842B2 (ja) * 2001-08-29 2007-06-20 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP4177048B2 (ja) * 2001-11-27 2008-11-05 古河電気工業株式会社 電力変換装置及びそれに用いるＧａＮ系半導体装置
JP3815335B2 (ja) * 2002-01-18 2006-08-30 ソニー株式会社 半導体発光素子及びその製造方法
WO2003071607A1 (en) * 2002-02-21 2003-08-28 The Furukawa Electric Co., Ltd. GaN FIELD-EFFECT TRANSISTOR
JP3952814B2 (ja) * 2002-03-15 2007-08-01 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US6830945B2 (en) * 2002-09-16 2004-12-14 Hrl Laboratories, Llc Method for fabricating a non-planar nitride-based heterostructure field effect transistor
JP4477296B2 (ja) 2002-11-14 2010-06-09 古河電気工業株式会社 電界効果トランジスタ及びその製造方法
WO2005015642A1 (ja) * 2003-08-08 2005-02-17 Sanken Electric Co., Ltd. 半導体装置及びその製造方法
WO2005024955A1 (ja) * 2003-09-05 2005-03-17 Sanken Electric Co., Ltd. 半導体装置
DE102004058431B4 (de) * 2003-12-05 2021-02-18 Infineon Technologies Americas Corp. III-Nitrid Halbleitervorrichtung mit Grabenstruktur
US7407837B2 (en) * 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
US7098093B2 (en) * 2004-09-13 2006-08-29 Northrop Grumman Corporation HEMT device and method of making
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
JP4916671B2 (ja) * 2005-03-31 2012-04-18 住友電工デバイス・イノベーション株式会社 半導体装置
JP4986406B2 (ja) * 2005-03-31 2012-07-25 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP2418682A2 (en) 2012-02-15
EP1708275B1 (en) 2013-02-27
EP2418682A3 (en) 2012-07-25
US20060219997A1 (en) 2006-10-05
EP1708275A2 (en) 2006-10-04
US7723751B2 (en) 2010-05-25
JP2006286910A (ja) 2006-10-19
EP1708275A3 (en) 2008-05-28

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