JP5038659B2 - 正方晶系構造のジルコニウム酸化膜形成方法及びその膜を備えたキャパシタの製造方法 - Google Patents
正方晶系構造のジルコニウム酸化膜形成方法及びその膜を備えたキャパシタの製造方法 Download PDFInfo
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 title claims description 100
- 229910001928 zirconium oxide Inorganic materials 0.000 title claims description 100
- 238000000034 method Methods 0.000 title claims description 61
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 title claims description 41
- 239000003990 capacitor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000151 deposition Methods 0.000 claims description 38
- 238000010926 purge Methods 0.000 claims description 34
- 238000000137 annealing Methods 0.000 claims description 31
- 230000008021 deposition Effects 0.000 claims description 26
- 229910052726 zirconium Inorganic materials 0.000 claims description 23
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 21
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- -1 purge Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 99
- 239000007789 gas Substances 0.000 description 26
- 238000005137 deposition process Methods 0.000 description 12
- 239000012495 reaction gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910019899 RuO Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
102 正方晶系構造のジルコニウム酸化膜
103 上部電極
Claims (25)
- 基板を配置した単原子蒸着用チャンバー内において、ジルコニウムソースの注入、パージ、酸化剤の注入及びパージを連続的に1回実施する第1のサイクルと、再度前記酸化剤の注入及びパージを連続的に1回実施する第2のサイクルとからなる単位サイクルを繰り返し行うことを特徴とするジルコニウム酸化膜の形成方法。
- 前記単原子蒸着用チャンバー内に設置された前記基板の温度が、250℃〜350℃の範囲に調節されることを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。
- 前記第1のサイクル及び第2のサイクルにおいて、酸化剤としてオゾンを使用し、該オゾンの濃度を150g/m3以上に制御することを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。
- 前記オゾンのフィーディング時間を1秒以上に制御することを特徴とする請求項3に記載のジルコニウム酸化膜の形成方法。
- 前記ジルコニウムソースが、
Zr(O−tBu)4、Zr[N(CH3)2]4、Zr[N(C2H5)(CH3)]4、Zr[N(C2H5)2]4、Zr(tmhd)4、Zr(OiC3H7)3(tmhd)、及び、Zr(OtBu)4からなる群の中から選択されるいずれか1つの物質であることを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。 - 前記第1のサイクル及び第2のサイクルにおいて、酸化剤として、オゾンプラズマ又は酸素プラズマを使用することを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。
- 前記単原子蒸着用チャンバーが、
シングルウェーハタイプの枚葉式装置又はバッチタイプの炉であることを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。 - 前記単位サイクルを繰り返し行った後、
アニーリングを行うことを特徴とする請求項1に記載のジルコニウム酸化膜の形成方法。 - 前記アニーリングが、400℃以上の温度で行われることを特徴とする請求項8に記載のジルコニウム酸化膜の形成方法。
- 前記アニーリングが、
急速熱処理法又は炉熱処理法を用いて行われることを特徴とする請求項8に記載のジルコニウム酸化膜の形成方法。 - 前記アニーリングの際の雰囲気として、酸素、オゾン、又は酸素プラズマを使用することを特徴とする請求項8に記載のジルコニウム酸化膜の形成方法。
- 基板上に下部電極を形成するステップと、
前記下部電極上に単原子蒸着法によって正方晶系構造を有するジルコニウム酸化膜を形成するステップと、
前記ジルコニウム酸化膜の形成後、前記ジルコニウム酸化膜の正方晶系構造を向上させるために、酸素雰囲気下で第1のアニーリングを行うステップと、
前記ジルコニウム酸化膜上に上部電極を形成するステップと、
前記上部電極の形成後、前記ジルコニウム酸化膜の誘電特性を向上させるための第2のアニーリングを行うステップと
を含むことを特徴とするキャパシタの製造方法。 - 前記ジルコニウム酸化膜を形成するステップが、
単原子蒸着用チャンバー内において、ジルコニウムソースの注入、パージ、酸化剤の注入及びパージを連続的に1回実施する単位サイクルを繰り返し行い、正方晶系の結晶構造が前記基板上に形成されるように、前記基板の温度及び前記酸化剤の濃度を調節することを特徴とする請求項12に記載のキャパシタの製造方法。 - 前記ジルコニウム酸化膜を形成するステップが、
単原子蒸着用チャンバー内において、ジルコニウムソースの注入、パージ、酸化剤の注入及びパージを連続的に1回実施する第1のサイクルと、再度前記酸化剤の注入及びパージを連続的に1回実施する第2のサイクルとからなる単位サイクルを繰り返し行うことを特徴とする請求項12に記載のキャパシタの製造方法。 - 前記基板の温度が、250℃〜350℃の範囲に調節されることを特徴とする請求項13又は14に記載のキャパシタの製造方法。
- 前記酸化剤がオゾンであり、該オゾンの濃度を150g/m3以上に制御することを特徴とする請求項13又は14に記載のキャパシタの製造方法。
- 前記オゾンのフィーディング時間を1秒以上に制御することを特徴とする請求項16に記載のキャパシタの製造方法。
- 前記ジルコニウムソースが、
Zr(O−tBu)4、Zr[N(CH3)2]4、Zr[N(C2H5)(CH3)]4、Zr[N(C2H5)2]4、Zr(tmhd)4、Zr(OiC3H7)3(tmhd)、及び、Zr(OtBu)4からなる群の中から選択されるいずれか1つの物質を使用することを特徴とする請求項13又は14に記載のキャパシタの製造方法。 - 前記酸化剤として、
オゾンプラズマ又は酸素プラズマを使用することを特徴とする請求項13又は14に記載のキャパシタの製造方法。 - 前記単原子蒸着用チャンバーが、
シングルウェーハタイプの枚葉式装置又はバッチタイプの炉であることを特徴とする請求項13又は14に記載のキャパシタの製造方法。 - 前記第1のアニーリングが、400℃以上の温度で行われることを特徴とする請求項12に記載のキャパシタの製造方法。
- 前記第1のアニーリングが、
急速熱処理法又は炉熱処理法を用いて行われることを特徴とする請求項12に記載のキャパシタの製造方法。 - 前記第1のアニーリングの際の雰囲気として、酸素、オゾン、又は酸素プラズマを使用することを特徴とする請求項12に記載のキャパシタの製造方法。
- 前記第2のアニーリングが、
窒素、アルゴン、又は真空雰囲気で行われることを特徴とする請求項12に記載のキャパシタの製造方法。 - 前記ジルコニウム酸化膜と、Al2O3、TiO2、Ta2O5、HfO2及びLa2O3からなる群の中から選択されるいずれか1つの物質の誘電膜とを積層するステップをさらに含むことを特徴とする請求項12に記載のキャパシタの製造方法。
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4228008B2 (ja) | 2006-08-23 | 2009-02-25 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
KR100819002B1 (ko) * | 2006-10-20 | 2008-04-02 | 삼성전자주식회사 | 비휘발성 메모리 소자 제조 방법 |
US20080211065A1 (en) * | 2007-03-02 | 2008-09-04 | Shrinivas Govindarajan | Semiconductor devices and methods of manufacture thereof |
KR100965771B1 (ko) | 2007-05-07 | 2010-06-24 | 주식회사 하이닉스반도체 | 탄탈륨산화막을 구비한 유전막 제조 방법 및 그를 이용한캐패시터 제조 방법 |
JP5221089B2 (ja) * | 2007-09-19 | 2013-06-26 | 東京エレクトロン株式会社 | 成膜方法、成膜装置および記憶媒体 |
US8159012B2 (en) | 2007-09-28 | 2012-04-17 | Samsung Electronics Co., Ltd. | Semiconductor device including insulating layer of cubic system or tetragonal system |
US8969188B2 (en) | 2008-09-26 | 2015-03-03 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices |
JP5423529B2 (ja) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5587716B2 (ja) * | 2010-09-27 | 2014-09-10 | マイクロンメモリジャパン株式会社 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
US8530322B2 (en) * | 2010-12-16 | 2013-09-10 | Intermolecular, Inc. | Method of forming stacked metal oxide layers |
JP6017361B2 (ja) * | 2013-03-29 | 2016-10-26 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US10301159B2 (en) | 2013-08-27 | 2019-05-28 | Anthony V. Feola | Beverage dispensing machine |
US9930903B2 (en) | 2013-08-27 | 2018-04-03 | Anthony V. Feola | Frozen confection machine |
US9425394B2 (en) * | 2013-09-03 | 2016-08-23 | Intermolecular, Inc. | Doped oxide dielectrics for resistive random access memory cells |
US9178006B2 (en) | 2014-02-10 | 2015-11-03 | Intermolecular, Inc. | Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications |
KR101569447B1 (ko) | 2014-04-29 | 2015-11-16 | (주)디엔에프 | 지르코늄 산화물 박막 형성용 전구체 화합물, 이의 제조방법 및 이를 이용한 박막의 제조방법 |
KR102322960B1 (ko) | 2015-07-15 | 2021-11-05 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
US10453913B2 (en) * | 2017-04-26 | 2019-10-22 | Samsung Electronics Co., Ltd. | Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device |
KR102466330B1 (ko) * | 2017-04-26 | 2022-11-15 | 삼성전자주식회사 | 커패시터 및 그 제조 방법 |
KR102428322B1 (ko) * | 2017-09-15 | 2022-08-03 | 삼성전자주식회사 | 커패시터의 제조 방법 및 반도체 소자 |
CN112713081A (zh) * | 2019-10-24 | 2021-04-27 | 夏泰鑫半导体(青岛)有限公司 | 半导体元件及其制备方法 |
CN111952267B (zh) * | 2020-09-16 | 2024-03-15 | 大连达利凯普科技股份公司 | 一种提高单层电容器键合强度的制造工艺 |
US20220310776A1 (en) * | 2021-03-23 | 2022-09-29 | Applied Materials, Inc. | Integrated platform for tin pvd and high-k ald for beol mim capacitor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297539B1 (en) * | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
KR100467366B1 (ko) * | 2000-06-30 | 2005-01-24 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 지르코늄산화막 형성방법 |
US7087482B2 (en) * | 2001-01-19 | 2006-08-08 | Samsung Electronics Co., Ltd. | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
JP4171250B2 (ja) * | 2002-06-19 | 2008-10-22 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
TW200408323A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
US6753224B1 (en) * | 2002-12-19 | 2004-06-22 | Taiwan Semiconductor Manufacturing Company | Layer of high-k inter-poly dielectric |
US6930059B2 (en) * | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
JP3920235B2 (ja) | 2003-03-24 | 2007-05-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR20050029339A (ko) * | 2003-09-22 | 2005-03-28 | 삼성전자주식회사 | 원자층 증착법을 이용한 유전막 형성방법, 및 이를 이용한반도체 장치의 캐패시터 형성방법 |
US6989573B2 (en) * | 2003-10-10 | 2006-01-24 | Micron Technology, Inc. | Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics |
KR20050050003A (ko) * | 2003-11-24 | 2005-05-27 | 삼성전자주식회사 | 원자층증착 기술을 사용하여 탄소 불순물들을 함유하는유전막을 형성하는 방법 |
JP4916092B2 (ja) * | 2004-02-26 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4303709B2 (ja) * | 2005-07-11 | 2009-07-29 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
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