JP5035240B2 - 感放射線性絶縁樹脂組成物 - Google Patents

感放射線性絶縁樹脂組成物 Download PDF

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JP5035240B2
JP5035240B2 JP2008512026A JP2008512026A JP5035240B2 JP 5035240 B2 JP5035240 B2 JP 5035240B2 JP 2008512026 A JP2008512026 A JP 2008512026A JP 2008512026 A JP2008512026 A JP 2008512026A JP 5035240 B2 JP5035240 B2 JP 5035240B2
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radiation
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resin composition
resin
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JPWO2007122929A1 (ja
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淳史 伊藤
隆一 奥田
寛文 佐々木
宏文 後藤
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JSR Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/372—Sulfides, e.g. R-(S)x-R'
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
JP2008512026A 2006-03-30 2007-03-16 感放射線性絶縁樹脂組成物 Active JP5035240B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008512026A JP5035240B2 (ja) 2006-03-30 2007-03-16 感放射線性絶縁樹脂組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006095645 2006-03-30
JP2006095645 2006-03-30
PCT/JP2007/055397 WO2007122929A1 (ja) 2006-03-30 2007-03-16 感放射線性絶縁樹脂組成物
JP2008512026A JP5035240B2 (ja) 2006-03-30 2007-03-16 感放射線性絶縁樹脂組成物

Publications (2)

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JPWO2007122929A1 JPWO2007122929A1 (ja) 2009-09-03
JP5035240B2 true JP5035240B2 (ja) 2012-09-26

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JP (1) JP5035240B2 (ko)
KR (1) KR101338716B1 (ko)
WO (1) WO2007122929A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101586871B1 (ko) * 2008-04-28 2016-01-19 니폰 제온 가부시키가이샤 감방사선 수지 조성물, 적층체 및 그 제조 방법, 및 반도체 디바이스
JP5407563B2 (ja) * 2008-07-04 2014-02-05 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP5827788B2 (ja) * 2010-03-09 2015-12-02 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP5742843B2 (ja) * 2010-07-09 2015-07-01 住友ベークライト株式会社 硬化膜形成方法
JP5691645B2 (ja) * 2011-02-28 2015-04-01 住友ベークライト株式会社 感光性樹脂組成物、硬化膜、保護膜、絶縁膜、半導体装置、および表示体装置
JP5831092B2 (ja) * 2011-09-27 2015-12-09 東レ株式会社 ポジ型感光性樹脂組成物
KR20140147847A (ko) * 2012-04-16 2014-12-30 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 ｅｌ 표시 장치 및 액정 표시 장치
EP2916169B1 (en) * 2012-10-31 2020-01-01 Hitachi Chemical Company, Ltd. Photosensitive resin composition, method for producing patterned cured film, semiconductor element and electronic device
JP6102389B2 (ja) * 2013-03-21 2017-03-29 東レ株式会社 樹脂組成物
JP6048257B2 (ja) * 2013-03-25 2016-12-21 東レ株式会社 耐熱性樹脂及びその前駆体組成物
CN109716235B (zh) * 2016-09-20 2022-11-18 太阳控股株式会社 正型感光性树脂组合物、干膜、固化物、印刷电路板及半导体元件
JP2018097210A (ja) * 2016-12-14 2018-06-21 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、硬化パターンの製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
JP7151874B2 (ja) * 2019-03-27 2022-10-12 昭和電工マテリアルズ株式会社 樹脂組成物、硬化物、半導体素子及び電子デバイス
JP7261882B2 (ja) * 2019-07-05 2023-04-20 富士フイルム株式会社 熱硬化性感光性組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10301264A (ja) * 1996-10-16 1998-11-13 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
JP2001147530A (ja) * 1999-04-30 2001-05-29 Sumitomo Chem Co Ltd ネガ型レジスト組成物
JP2002229190A (ja) * 2001-02-05 2002-08-14 Fuji Photo Film Co Ltd ポジ型化学増幅レジスト組成物
JP2002303986A (ja) * 2001-01-22 2002-10-18 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法
JP2007078796A (ja) * 2005-09-12 2007-03-29 Sumitomo Bakelite Co Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003342433A (ja) * 2002-05-27 2003-12-03 Nippon Steel Chem Co Ltd ヒドロキシスチレン系重合体組成物及び感光性組成物
JP4296792B2 (ja) * 2003-02-05 2009-07-15 Ｊｓｒ株式会社 ポジ型感光性樹脂組成物およびその硬化物
JP4306267B2 (ja) * 2003-02-05 2009-07-29 Ｊｓｒ株式会社 ネガ型感光性樹脂組成物およびその硬化物
JP4265282B2 (ja) * 2003-05-22 2009-05-20 Ｊｓｒ株式会社 感光性絶縁樹脂組成物およびその硬化物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10301264A (ja) * 1996-10-16 1998-11-13 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
JP2001147530A (ja) * 1999-04-30 2001-05-29 Sumitomo Chem Co Ltd ネガ型レジスト組成物
JP2002303986A (ja) * 2001-01-22 2002-10-18 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法
JP2002229190A (ja) * 2001-02-05 2002-08-14 Fuji Photo Film Co Ltd ポジ型化学増幅レジスト組成物
JP2007078796A (ja) * 2005-09-12 2007-03-29 Sumitomo Bakelite Co Ltd 半導体装置

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KR101338716B1 (ko) 2013-12-06
JPWO2007122929A1 (ja) 2009-09-03
WO2007122929A1 (ja) 2007-11-01
KR20090005106A (ko) 2009-01-12

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